RESUMEN
Successful deep and alignment-free patterned etching on GaN using atomic force microscope (AFM) local oxidation followed by in-situ chemical etching is demonstrated. Oxide ridges are grown on GaN on an AFM by applying positive sample bias at 80% humidity, with the oxidation reaction expedited by UV light. The oxide ridges are then etched by HCl solution, leaving troughs in the GaN surface. A dripping strategy for the in-situ chemical etching is recommended that allows deep, alignment-free multiple AFM oxidation/etching works on the GaN surface without any need of substrate removal from the AFM platform. Repeated etching followed by AFM oxidation on a spot on a GaN surface resulting in a hole as deep as 800 nm was also demonstrated. Further, a preliminary evaluation of the porosity of the AFM-grown oxide indicates that the oxide ridges grown on GaN at an AFM cantilever moving speed of 300 nm/s are porous in structure, with an estimated porosity of 86%, which porosity could be reduced if longer resident time of the AFM cantilever on the target oxidation region was used.
RESUMEN
We describe here an electrochemical cell ideal for routine analysis of CE-EC experiments (capillary electrophoresis coupled with electrochemical detection). The cell was modified from a fiber-optic connector, named MT, which allowed frequent change and fast alignment between a pair of 4-strand fiber ribbons. The relative standard deviations of the current response and migration time for 100 microM dopamine were, respectively, 3.7 and 0.5% in five repetitive routines of disconnecting, polishing, and assembling the CE cell. The time required for alignment of the separation capillary and the working electrode was < 10 s, once all components were assembled in an MT fiber-optic plug. These features enabled CE-EC users to polish the working electrode and reassemble the EC cell as in HPLC-EC. However, to accommodate the channel dimensions of the commercially available MT, a special order capillary with outer diameter of 125 microm is necessary at this stage.