RESUMEN
Motivated by our previous work on pristine Na2SiO3, we proceeded with calculations on the structural, electronic, mechanical and piezoelectric properties of complex glass-like Na2Si1-x Ge x O3 (x = 0.0, 0.25, 0.50, 0.75, 1.0) by using density functional theory (DFT). Interestingly, the optimized bond lengths and bond angles of Na2SiO3 and Na2GeO3 resemble each other with high similarity. On doping we report the negative formation energy and feasibility of transition of Na2SiO3 â Na2GeO3 while the structural symmetry is preserved. Analyzing the electronic profile, we have observed a reduced band gap on increasing x = Ge concentration at Si-sites. All the systems are indirect band gap (Z-Γ) semiconductors. The studied systems have shown mechanical stabilities by satisfying the Born criteria for mechanical stability. The calculated results have shown highly anisotropic behaviour and high melting temperature, which are a signature of glass materials. The piezoelectric tensor (both direct and converse) is computed. The results thus obtained predict that the systems under investigation are potential piezoelectric materials for energy harvesting.
RESUMEN
The structural, mechanical, electronic, optical and piezoelectric properties of Na2SiO3 are studied under varying compressive unidirectional pressure (0-50 GPa with a difference of 10 GPa) using density functional theory (DFT). The calculated structural properties agree well with previously reported results. At 12 GPa, our calculation shows a structural phase transition from orthorhombic Cmc21 to triclinic P1. The mechanical profile of Na2SiO3 structures under different compressive unidirectional pressures are analysed by calculating the elastic moduli, Poisson's ratio and eigenvalues of stiffness matrix. Our study shows the mechanical stability of the system up to a pressure of 40 GPa. Herein, we have obtained an indirect band gap of 2.97 eV at 0 GPa. Between 0-50 GPa, the band gaps are within the range 2.62 to 3.46 eV. The system in our study possesses a wide band gap and high optical absorption in the UV-Vis range of electromagnetic radiation. The calculated static refractive indices η x,y,z (0) are close to unity suggesting its transparency. For piezoelectric properties, we have reported the total Cartesian polarization. Our calculations have revealed that Na2SiO3 is a promising candidate for optoelectronic devices while its application in ferroelectric and piezoelectric devices could be improved with further research.
