Spectrometer based on a compact disordered multi-mode interferometer.

We present a compact, CMOS compatible, photonic integrated circuit (PIC) based spectrometer that combines a dispersive array element of SiO2-filled scattering holes within a multimode interferometer (MMI) fabricated on the silicon-on-insulator (SOI) platform. The spectrometer has a bandwidth of 67 nm, a lower bandwidth limit of 1 nm, and a peak-to-peak resolution of 3 nm for wavelengths around 1310 nm.

Laser-Assisted Ultrafast Fabrication of Crystalline Ta-Doped TiO2 for High-Humidity-Processed Perovskite Solar Cells.

A titanium dioxide (TiO2) compact film is a widely used electron transport layer (ETL) for n-i-p planar perovskite solar cells (PSCs). However, TiO2 sufferers from poor electrical conductivity, leading to high energy loss at the perovskite/ETL/transparent conductive oxide interface. Doping the TiO2 film with alkali- and transition-metal elements is an effective way to improve its electrical conductivity. The conventional method to prepare these metal-doped TiO2 films commonly requires time-consuming furnace treatments at 450-600 °C for 30 min to 3 h. Herein, a rapid one-step laser treatment is developed to enable doping of tantalum (Ta) in TiO2 (Ta-TiO2) and to simultaneously induce the crystallization of TiO2 films from its amorphous precursor to an anatase phase. The PSCs based on the Ta-TiO2 films treated with the optimized fiber laser (1070 nm) processing parameters (21 s with a peak processing temperature of 800-850 °C) show enhanced photovoltaic performance in comparison to that of the device fabricated using furnace-treated films at 500 °C for 30 min. The ambient-processed planar PSCs fabricated under high relative humidity (RH) of 50-70% display power conversion efficiencies (PCEs) of 18.34% and 16.04% for devices based on Cs0.1FA0.9PbI3 and CH3NH3PbI3 absorbers, respectively. These results are due to the improved physical and chemical properties of the Ta-TiO2 films treated by the optimal laser process in comparison to those for the furnace process. The laser process is rapid, simple, and potentially scalable to produce metal-doped TiO2 films for efficient PSCs.

Manipulation of Molecular Vibrations on Condensing Er3+ State Densities for 1.5 µm Application.

Vibrational modes of chemical bonds in organic erbium (Er3+) materials play an important role in determining the efficiency of the 1.5 µm Er3+ emission. This work studies the energy coupling of the Er3+ intra-4f transitions and vibrational modes. The results demonstrate that the coupling introduces enormous nonradiative internal relaxation, which condenses the excited erbium population on to the 4I13/2 state. This suggests that vibrational modes can be advantageous for optimizing the branching ratio for the 1.5 µm transition in organic erbium materials. Through control of the quenching effect on to the 4I13/2 state and a reliable determination of intrinsic radiative rates, it is found that the pump power for population inversion can be reduced by an order of magnitude at high erbium concentrations compared to conventional inorganic erbium materials.

Non-diffracting beam generated from a photonic integrated circuit based axicon-like lens.

We demonstrate an on-chip silicon-on-insulator (SOI) device to generate a non-diffracting beam of ≈850 µm length from a diffractive axicon-like lens etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The device consists of circular gratings with seven stages of 1x2 multimode interferometers. We present a technique to apodize the gratings azimuthally by breaking up the circles into arcs which successfully increased the penetration depth in the gratings from ≈5 µm to ≈60 µm. We characterize the device's performance by coupling 1300±50 nm swept source laser in to the chip from the axicon and measuring the out-coupled light from a grating coupler. Further, we also present the implementation of balanced homodyne detection method for the spectral characterization of the device and show that the position of the output lobe of the axicon does not change significantly with wavelength.

Multiple Roles of 1,4-Diazabicyclo[2.2.2]octane in the Solvothermal Synthesis of Iodobismuthates.

Hybrid bismuth-containing halides are emerging as alternative candidates to lead-containing perovskites for light-harvesting applications, as Bi3+ is isoelectronic with Pb2+ and the presence of an active lone pair of electrons is expected to result in outstanding charge-carrier transport properties. Here, we report a family of one binary and three ternary iodobismuthates containing 1,4-diazabicyclo[2.2.2]octane (DABCO). These materials have been prepared solvothermally and their crystal structures, thermal stability, and optical properties determined. Reactions carried out in the presence of bismuth iodide and DABCO produced (C6H12N2)BiI3 (1), which consists of hybrid ribbons in which pairs of edge-sharing bismuth octahedra are linked by DABCO ligands. Short I···I contacts give rise to a three-dimensional network. Similar reactions in the presence of copper iodide produced (C8H17N2)2Bi2Cu2I10 (2) and [(C6H13N2)2BiCu2I7](C2H5OH) (3) in which either ethylated DABCO cations (EtDABCO)+ or monoprotonated DABCO cations (DABCOH)+ are coordinated to copper in discrete tetranuclear and trinuclear clusters, respectively. In the presence of potassium iodide, a unique three-dimensional framework, (C6H14N2)[(C6H12N2)KBiI6] (4), was formed, which contains one-dimensional hexagonal channels approximately 6 Å in diameter. The optical band gaps of these materials, which are semiconductors, range between 1.82 and 2.27 eV, with the lowest values found for the copper-containing discrete clusters. Preliminary results on the preparation of thin films are presented.

Preparation of solution processed photodetectors comprised of two-dimensional tin(ii) sulfide nanosheet thin films assembled via the Langmuir-Blodgett method.

We report the manufacture of fully solution processed photodetectors based on two-dimensional tin(ii) sulfide assembled via the Langmuir-Blodgett method. The method we propose can coat a variety of substrates including paper, Si/SiO2 and flexible polymer allowing for a potentially wide range of applications in future optoelectronic devices.

Synthesis of IR-emitting HgTe quantum dots using an ionic liquid-based tellurium precursor.

New scalable precursor chemistries for quantum dots are highly desirable and ionic liquids are viewed as an attractive alternative to existing solvents, as they are often considered green and recyclable. Here we report the synthesis of HgTe quantum dots with emission in the near-IR region using a phosphonium based ionic liquid, and without standard phosphine capping agents.

Loss of phenotypic inheritance associated with ydcI mutation leads to increased frequency of small, slow persisters in Escherichia coli.

Whenever a genetically homogenous population of bacterial cells is exposed to antibiotics, a tiny fraction of cells survives the treatment, the phenomenon known as bacterial persistence [G.L. Hobby et al., Exp. Biol. Med. 50, 281-285 (1942); J. Bigger, The Lancet 244, 497-500 (1944)]. Despite its biomedical relevance, the origin of the phenomenon is still unknown, and as a rare, phenotypically resistant subpopulation, persisters are notoriously hard to study and define. Using computerized tracking we show that persisters are small at birth and slowly replicating. We also determine that the high-persister mutant strain of Escherichia coli, HipQ, is associated with the phenotype of reduced phenotypic inheritance (RPI). We identify the gene responsible for RPI, ydcI, which encodes a transcription factor, and propose a mechanism whereby loss of phenotypic inheritance causes increased frequency of persisters. These results provide insight into the generation and maintenance of phenotypic variation and provide potential targets for the development of therapeutic strategies that tackle persistence in bacterial infections.

Confinement Effects and Charge Dynamics in Zn3N2 Colloidal Quantum Dots: Implications for QD-LED Displays.

Zinc nitride (Zn3N2) colloidal quantum dots are composed of nontoxic, low-cost, and earth-abundant elements. The effects of quantum confinement on the optical properties and charge dynamics of these dots are studied using steady-state optical characterization and ultrafast fluence-dependent transient absorption. The absorption and emission energies are observed to be size-tunable, with the optical band gap increasing from 1.5 to 3.2 eV as the dot diameter decreased from 8.9 to 2.7 nm. Size-dependent absorption cross sections (σ = 1.22 ± 0.02 × 10-15 to 2.04 ± 0.03 × 10-15 cm2), single exciton lifetimes (0.36 ± 0.02 to 0.65 ± 0.03 ns), as well as Auger recombination lifetimes of biexcitons (3.2 ± 0.4 to 5.0 ± 0.1 ps) and trions (20.8 ± 1.8 to 46.3 ± 1.3 ps) are also measured. The degeneracy of the conduction band minimum (g = 2) is determined from the analysis of the transient absorption spectra at different excitation fluences. The performance of Zn3N2 colloidal quantum dots thus broadly matches that of established visible light emitting quantum dots based on toxic or rare elements, making them a viable alternative for QD-LED displays.

Solution Processable 1D Fullerene C60 Crystals for Visible Spectrum Photodetectors.

Visible spectrum photodetector devices fabricated using molecular crystals of carbon C60 are reported. The devices operate efficiently, extending over and beyond the full visible light spectrum (300-710 nm) with a bias voltage tunable responsivity of 4 mA-0.5 mA W-1 . Across this range of wavelengths, the noise equivalent power of these devices remains below 102 nW Hz-1/2 , providing a detectivity of 107 Jones. The noise current in these devices is found to have a strong dependence on both bias voltage and frequency, varying by 4 orders of magnitude from 1 nA Hz-1/2 to 0.1 pA Hz-1/2 . The devices also display a near-linear dependence of photocurrent on light intensity over 4 orders of magnitude, providing a dynamic range approaching 80 dB. The 3 dB bandwidth of the devices is found to be above 102 Hz, while the 18 dB bandwidth exceeds 1 kHz. The transient photocurrents of the devices have a rise time of ≈50 µs and a long fall time of ≈4 ms. The spectral photocurrent of the devices is found to quench gradually with a reduction in temperature from ≈300 K and is fully quenched at temperatures below T ≈ 100 K. Upon reheating, the device performance is fully recovered.