Film-thickness-dependent conduction in ordered Si quantum dot arrays.

In recent years, silicon nanostructures have been investigated extensively for their potential use in photonic and photovoltaic applications. So far, for silicon quantum dots embedded in SiO(2), control over inter-dot distance and size has only been observed in multiple bilayer stacks of silicon-rich oxides and silicon dioxide. In this work, for the first time the fabrication of spatially well-ordered Si quantum dots (QDs) in SiO(2) is demonstrated, without using the multilayer approach. This ordered formation, confirmed with TEM micrographs, depends on the thickness of the initially deposited sub-stoichiometric silicon oxide film. Grazing incidence x-ray diffraction confirms the crystallinity of the 5 nm QDs while photoluminescence shows augmented bandgap values. Low-temperature current-voltage measurements demonstrate film thickness and order-dependent conduction mechanisms, showing the transition from temperature-dependent conduction in randomly placed dots to temperature-independent tunnelling for geometrically ordered nanocrystals. Contrary to expectations from dielectric materials, significant conduction and photocarrier generation have been observed in our Si QDs embedded in SiO(2) demonstrating the possibility of forming initial film-thickness-controlled conductive films. This conduction via the silicon quantum dots in thick single layers is a promising result for integration into photovoltaic devices.

Conformal atomic layer deposition of TA-based diffusion barrier film using a novel mono-guanidinate precursor.

In this work, we present elaboration of Ta-based thin films by ALD from a novel tantalum precursor, the eta2-N,N'-isopropylethylguanidinato-tetra-diethylamino tantalum ([eta2-(i)PrNC(NEt2)NEt]Ta(NEt2)4, IEGTDEAT). Ammonia was used as reducing agents. The experimental conditions were optimized by quartz microgravimetry, studying the influence of duration of precursors and purge pulses and the substrate temperature. An optimal deposition temperature of 260 degrees C was showed. Ta-based thin films deposited on planar and patterned substrates showed a perfect conformality and continuity, even at low number of cycles.