Instability and Spontaneous Reconstruction of Few-Monolayer Thick GaN Graphitic Structures.

Two-dimensional (2D) semiconductors are a very hot topic in solid state science and technology. In addition to van der Waals solids that can be easily formed into 2D layers, it was argued that single layers of nominally 3D tetrahedrally bonded semiconductors, such as GaN or ZnO, also become flat in the monolayer limit; the planar structure was also proposed for few-layers of such materials. In this work, using first-principles calculations, we demonstrate that contrary to the existing consensus the graphitic structure of few-layer GaN is unstable and spontaneously reconstructs into a structure that remains hexagonal in plane but with covalent interlayer bonds that form alternating octagonal and square (8|4 Haeckelite) rings with pronounced in-plane anisotropy. Of special interest is the transformation of the band gap from indirect in planar GaN toward direct in the Haeckelite phase, making Haeckelite few-layer GaN an appealing material for flexible nano-optoelectronics.

Understanding Phase-Change Memory Alloys from a Chemical Perspective.

Phase-change memories (PCM) are associated with reversible ultra-fast low-energy crystal-to-amorphous switching in GeTe-based alloys co-existing with the high stability of the two phases at ambient temperature, a unique property that has been recently explained by the high fragility of the glass-forming liquid phase, where the activation barrier for crystallisation drastically increases as the temperature decreases from the glass-transition to room temperature. At the same time the atomistic dynamics of the phase-change process and the associated changes in the nature of bonding have remained unknown. In this work we demonstrate that key to this behavior is the formation of transient three-center bonds in the excited state that is enabled due to the presence of lone-pair electrons. Our findings additionally reveal previously ignored fundamental similarities between the mechanisms of reversible photoinduced structural changes in chalcogenide glasses and phase-change alloys and offer new insights into the development of efficient PCM materials.

Study of band inversion in the PbxSn1-xTe class of topological crystalline insulators using x-ray absorption spectroscopy.

Pb(x)Sn(1-x)Te and Pb(x)Sn(1-x)Se crystals belong to the class of topological crystalline insulators where topological protection is achieved due to crystal symmetry rather than time-reversal symmetry. In this work, we make use of selection rules in the x-ray absorption process to experimentally detect band inversion along the PbTe(Se)-SnTe(Se) tie-lines. The observed significant change in the ratio of intensities of L1 and L3 transitions along the tie-line demonstrates that x-ray absorption can be a useful tool to study band inversion in topological insulators.

Interfacial phase-change memory.

Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decreases the resistivity by three orders of magnitude, and also increases reflectivity across the visible spectrum. Moreover, phase-change memory based on GST is scalable, and is therefore a candidate to replace Flash memory for non-volatile data storage applications. The energy needed to switch between the two phases depends on the intrinsic properties of the phase-change material and the device architecture; this energy is usually supplied by laser or electrical pulses. The switching energy for GST can be reduced by limiting the movement of the atoms to a single dimension, thus substantially reducing the entropic losses associated with the phase-change process. In particular, aligning the c-axis of a hexagonal Sb(2)Te(3) layer and the 〈111〉 direction of a cubic GeTe layer in a superlattice structure creates a material in which Ge atoms can switch between octahedral sites and lower-coordination sites at the interface of the superlattice layers. Here we demonstrate GeTe/Sb(2)Te(3) interfacial phase-change memory (IPCM) data storage devices with reduced switching energies, improved write-erase cycle lifetimes and faster switching speeds.

Distortion-triggered loss of long-range order in solids with bonding energy hierarchy.

An amorphous-to-crystal transition in phase-change materials like Ge-Sb-Te is widely used for data storage. The basic principle is to take advantage of the property contrast between the crystalline and amorphous states to encode information; amorphization is believed to be caused by melting the materials with an intense laser or electrical pulse and subsequently quenching the melt. Here, we demonstrate that distortions in the crystalline phase may trigger a collapse of long-range order, generating the amorphous phase without going through the liquid state. We further show that the principal change in optical properties occurs during the distortion of the still crystalline structure, upsetting yet another commonly held belief that attributes the change in properties to the loss of long-range order. Furthermore, our results suggest a way to lower energy consumption by condensing phase change inducing energy into shorter pulses or through the use of coherent phonon excitation.

Toward the ultimate limit of phase change in Ge(2)Sb(2)Te(5).

The limit to which the phase change memory material Ge(2)Sb(2)Te(5) can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge(2)Sb(2)Te(5) has an increasingly dominant effect on the material's ability to change phase, and a profound increase in the crystallization temperature is observed when the Ge(2)Sb(2)Te(5) layer is less than 6 nm thick. We have found that the increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress, we have maintained the bulk crystallization temperature in Ge(2)Sb(2)Te(5) films just 2 nm thick.

Initial structure memory of pressure-induced changes in the phase-change memory alloy Ge2Sb2Te5.

We demonstrate that while the metastable face-centered cubic (fcc) phase of Ge2Sb2Te5 becomes amorphous under hydrostatic compression at about 15 GPa, the stable trigonal phase remains crystalline. Upon higher compression, a body-centered cubic phase is obtained in both cases around 30 GPa. Upon decompression, the amorphous phase is retained for the starting fcc phase while the initial structure is recovered for the starting trigonal phase. We argue that the presence of vacancies and associated subsequent large atomic displacements lead to nanoscale phase separation and loss of initial structure memory in the fcc staring phase of Ge2Sb2Te5.

Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4.

High-resolution photoelectron spectroscopy of in situ prepared films of GeSb2Te4 reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.

Pressure-induced site-selective disordering of Ge2Sb2Te5: a new insight into phase-change optical recording.

We demonstrate that , the material of choice in phase-change optical recording (such as DVD-RAM), can be rendered amorphous by the application of hydrostatic pressure. It is argued that this structural change is due to a very strong second-nearest-neighbor Te-Te interaction that determines the long-range order in the metastable cubic phase of and also to the presence of vacancies. This newly discovered phenomenon suggests that pressure is an important factor for the formation of the amorphous phase which opens new insight into the mechanism of phase-change optical recording.

[Anti-angiogenesis strategies in cancer]. / Stratégies anti-angiogéniques en cancérologie.

It is generally accepted that tumor development requires the secretion by cancer cells of soluble mediators which activate the formation of new vessels, called "Tumor Angiogenic Factors". The intense quest for identifying these factors has recently been confirmed by strong experimental data. The discovery in 1989 of the Vascular Endothelial Growth Factor VEGF and of new proteases had led to the identification of the key actors of tumor angiogenesis. The elucidation of their mechanisms of action allowed to design new therapeutic strategies already confirmed by preclinical trials. There are now almost twenty molecules which are under clinical investigation in man.

Formalistic description of multislice calculation method.

This paper presents a formalistic description of the multislice method. The effects of the number of beams, the number of Fourier components for the projected potential used for the phase grating, the number of the iterations and the slice thickness on multislice calculations are discussed qualitatively. The phenomenon of "leaking" of the wave function to higher order reflections in reciprocal space in a multislice calculation is also discussed. The relationship between the number of Fourier components of the projected potential and the number of beams used for the wave function in reciprocal space is discussed. Additionally, the difference between the eigenvalue method and the multislice method is introduced. The difference between the use of the Fourier transformation vs. the convolution in reciprocal space on multislice calculations is also discussed. Multislice computer simulations were carried out using the commercial program Cerius2 for rutile TiO2. Calculated results are compared with the results of other programs reported in the literature. The effect of slice thickness of the multislice calculation is also shown.

Overexpression of DNA polymerase beta sensitizes mammalian cells to 2',3'-deoxycytidine and 3'-azido-3'-deoxythymidine.

Mammalian DNA polymerase beta is a DNA repair enzyme expressed constitutively at a low level. In vitro, purified DNA polymerase (Pol) beta incorporates the nucleotide analogues 2'-3' deoxycytidine (ddC)-triphosphate and 3'-azido-3'-deoxythymidine (AZT)-triphosphate into DNA, causing chain termination. We have tested the possibility of enhancing the cytotoxicity of these chain terminators against mammalian cells by increasing the level of Pol beta. Chinese hamster ovary AA8 and murine melanoma B16 cell lines were stably transfected with rat pol beta cDNA under the control of a viral enhancer/promoter. We found that overexpression of Pol beta sensitized the cells to ddC and AZT. To confirm the role of this polymerase in this process, we prepared cell extracts from the control and Pol beta overexpressing Chinese hamster ovary cell lines and tested in vitro their capacity to incorporate ddC-triphosphate and AZT-triphosphate into DNA. We found that inhibition of DNA replication by both chain terminators was more pronounced when extracts from pol beta-transfected cells were used, providing a direct evidence of the involvement of Pol beta in the sensitization process. In addition, we showed that cotransfection with bacterial or viral thymidine/thymidylate kinase genes enhanced the Pol beta-mediated cytotoxicity of AZT, suggesting that phosphorylation and polymerization activities might be combined to potentiate their respective effects. These observations may be useful for improving therapeutic efficiency of DNA chain terminators.