Engineering nanoscale hypersonic phonon transport.

Controlling vibrations in solids is crucial to tailor their elastic properties and interaction with light. Thermal vibrations represent a source of noise and dephasing for many physical processes at the quantum level. One strategy to avoid these vibrations is to structure a solid such that it possesses a phononic stop band, that is, a frequency range over which there are no available elastic waves. Here we demonstrate the complete absence of thermal vibrations in a nanostructured silicon membrane at room temperature over a broad spectral window, with a 5.3-GHz-wide bandgap centred at 8.4 GHz. By constructing a line-defect waveguide, we directly measure gigahertz guided modes without any external excitation using Brillouin light scattering spectroscopy. Our experimental results show that the shamrock crystal geometry can be used as an efficient platform for phonon manipulation with possible applications in optomechanics and signal processing transduction.

A self-stabilized coherent phonon source driven by optical forces.

We report a novel injection scheme that allows for "phonon lasing" in a one-dimensional opto-mechanical photonic crystal, in a sideband unresolved regime and with cooperativity values as low as 10(-2). It extracts energy from a cw infrared laser source and is based on the triggering of a thermo-optical/free-carrier-dispersion self-pulsing limit-cycle, which anharmonically modulates the radiation pressure force. The large amplitude of the coherent mechanical motion acts as a feedback that stabilizes and entrains the self-pulsing oscillations to simple fractions of the mechanical frequency. A manifold of frequency-entrained regions with two different mechanical modes (at 54 and 122 MHz) are observed as a result of the wide tuneability of the natural frequency of the self-pulsing. The system operates at ambient conditions of pressure and temperature in a silicon platform, which enables its exploitation in sensing, intra-chip metrology or time-keeping applications.

A one-dimensional optomechanical crystal with a complete phononic band gap.

Recent years have witnessed the boom of cavity optomechanics, which exploits the confinement and coupling of optical and mechanical waves at the nanoscale. Among their physical implementations, optomechanical (OM) crystals built on semiconductor slabs enable the integration and manipulation of multiple OM elements in a single chip and provide gigahertz phonons suitable for coherent phonon manipulation. Different demonstrations of coupling of infrared photons and gigahertz phonons in cavities created by inserting defects on OM crystals have been performed. However, the considered structures do not show a complete phononic bandgap, which should enable longer lifetimes, as acoustic leakage is minimized. Here we demonstrate the excitation of acoustic modes in a one-dimensional OM crystal properly designed to display a full phononic bandgap for acoustic modes at 4 GHz. The modes inside the complete bandgap are designed to have high-mechanical Q-factors, limit clamping losses and be invariant to fabrication imperfections.

A novel contactless technique for thermal field mapping and thermal conductivity determination: two-laser Raman thermometry.

We present a novel contactless technique for thermal conductivity determination and thermal field mapping based on creating a thermal distribution of phonons using a heating laser, while a second laser probes the local temperature through the spectral position of a Raman active mode. The spatial resolution can be as small as 300 nm, whereas its temperature accuracy is ±2 K. We validate this technique investigating the thermal properties of three free-standing single crystalline Si membranes with thickness of 250, 1000, and 2000 nm. We show that for two-dimensional materials such as free-standing membranes or thin films, and for small temperature gradients, the thermal field decays as T(r) ∝ ln(r) in the diffusive limit. The case of large temperature gradients within the membranes leads to an exponential decay of the thermal field, T ∝ exp[ - A·ln(r)]. The results demonstrate the full potential of this new contactless method for quantitative determination of thermal properties. The range of materials to which this method is applicable reaches far beyond the here demonstrated case of Si, as the only requirement is the presence of a Raman active mode.

Impact of Coulomb scattering on the ultrafast gain recovery in InGaAs quantum dots.

The application of quantum dot (QD) semiconductor optical amplifiers (SOAs) in above 100-Gbit Ethernet networks demands an ultrafast gain recovery on time scales similar to that of the input pulse approximately 100 GHz repetition frequency. Microscopic scattering processes have to act at shortest possible time scales and mechanisms speeding up the Coulomb scattering have to be explored, controlled, and exploited. We present a microscopic description of the gain recovery by coupled polarization- and population dynamics in a thermal nonequilibrium situation going beyond rate-equation models and discuss the limitations of Coulomb scattering between 0D and 2D-confined quantum states. An experiment is designed which demonstrates the control of gain recovery for THz pulse trains in InGaAs QD-based SOAs under powerful electrical injection.