RESUMEN
NonlinearI-Vcharacteristics associated with Coulomb blockade (CB) in conducting polymers were systematically investigated. At low temperatures, a crossover from Ohmic to nonlinear behavior was observed, along with drastically enhanced noise in differential conductance right from the crossover. The fluctuation can be well explained by the Coulombic oscillation in the collective percolation system, where the charge transport is related to the Coulombic charging energy between crystalline domains. Furthermore, a distinct quantum conductance, the fingerprint of CB caused by the individual tunneling between crystalline grains, was observed in sub-100 nm devices, confirming a strong association between nonlinearI-Vcharacteristics and CB effect.
RESUMEN
Molecular doping has conventionally been an effective way to improve the electrical-transport performances in organic field-effect transistors (OFETs), while corresponding mechanisms associated with specific doping techniques have been less investigated and discussed in detail. Here, based on ultrathin dinaphtho[2,3-b:2',3'-f]-thieno[3,2-b]thiophene (DNTT) single crystals, robust transconductance enhancements are realized in OFETs upon surface molecular doping realized via van der Waals epitaxially growing crystalline 1,3,4,5,7,8-hexafluoro-tetracyanonaphthoquinodimethane (F6TCNNQ) onto the single crystal's surface. It is proposed that it is the mobility modulation effect (MME) from the interactions between charge-transfer interface and gate electric field, that contributes to more weighted bulk carriers, and finally improves charge-transport performances. The evaluations are further supported by scanning Kelvin probe microscopy (SKPM) surface potential characterizations, which manifest the gate-induced more delocalized holes near the charge-transfer interfaces. Space-charge-limited current (SCLC) investigations, numerical calculations, and theoretical mobility modeling are also performed to corroborate the analysis. This study can deepen the understanding of charge transport in doped semiconductors and provide effective ways for optimizing the electrical performance of organic devices.