Búsqueda | Portal Regional de la BVS

1.

Temperature and magnetic field effects on the transport controlled charge state of a single quantum dot.

Larsson, L A; Larsson, M; Moskalenko, Es; Holtz, Po.

Nanoscale Res Lett ; 5(7): 1150-5, 2010 May 05.

Artículo en Inglés | MEDLINE | ID: mdl-20596313

RESUMEN

Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum dot, since the photo-excited carriers are primarily generated in the barrier.

2.

Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime.

Ferreira AC; Holtz PO; Sernelius BE; Buyanova I; Monemar B; Mauritz O; Ekenberg U; Sundaram M; Campman K; Merz JL; Gossard AC.

Phys Rev B Condens Matter ; 54(23): 16989-16993, 1996 Dec 15.

Artículo en Inglés | MEDLINE | ID: mdl-9985829

3.

Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells.

Ferreira AC; Holtz PO; Monemar B; Sundaram M; Campman K; Merz JL; Gossard AC.

Phys Rev B Condens Matter ; 54(23): 16994-16997, 1996 Dec 15.

Artículo en Inglés | MEDLINE | ID: mdl-9985830

4.

Self-consistent calculations and magnetoluminescence studies of strained InP/InxGa1-xAs heterojunctions.

Lundström T; Dalfors J; Holtz PO; Zhao QX; Monemar B; Landgren G; Wallin J.

Phys Rev B Condens Matter ; 54(15): 10637-10643, 1996 Oct 15.

Artículo en Inglés | MEDLINE | ID: mdl-9984860

5.

Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells.

Buyanov AV; Ferreira AC; Söderström E; Buyanova IA; Holtz PO; Sernelius B; Monemar B; Sundaram M; Campman K; Merz JL; Gossard AC.

Phys Rev B Condens Matter ; 53(3): 1357-1361, 1996 Jan 15.

Artículo en Inglés | MEDLINE | ID: mdl-9983595

6.

Optically detected cyclotron-resonance studies of radiative processes in AlxGa1-xAs/GaAs high-electron-mobility structures.

Godlewski M; Lundström T; Zhao QX; Chen WM; Holtz PO; Monemar B; Anderson TG.

Phys Rev B Condens Matter ; 52(20): 14688-14692, 1995 Nov 15.

Artículo en Inglés | MEDLINE | ID: mdl-9980804

7.

Resonant coupling of electrons and excitons in an aperiodic superlattice under electric fields studied by photoluminescence spectroscopy.

Cao SM; Willander M; Toropov AA; Shubina TV; Mel'tser BY; Shaposhnikov SV; Kop'ev PS; Holtz PO; Bergman JP; Monemar B.

Phys Rev B Condens Matter ; 51(23): 17267-17270, 1995 Jun 15.

Artículo en Inglés | MEDLINE | ID: mdl-9978753

8.

Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wells.

Harris CI; Monemar B; Kalt H; Holtz PO; Sundaram M; Merz JL; Gossard AC.

Phys Rev B Condens Matter ; 51(19): 13221-13225, 1995 May 15.

Artículo en Inglés | MEDLINE | ID: mdl-9978121

9.

Comment on "Excitonic recombination of degenerate two-dimensional electrons with localized photoexcited holes in a single heterojunction quantum well"

Holtz PO; Zhao QX; Harris CI; Bergman JP; Lundström T; Monemar B.

Phys Rev Lett ; 74(21): 4355, 1995 May 22.

Artículo en Inglés | MEDLINE | ID: mdl-10058481

10.

Exciton dynamics in GaAs/AlxGa1-xAs doped quantum wells.

Harris CI; Monemar B; Kalt H; Holtz PO; Sundaram M; Merz JL; Gossard AC.

Phys Rev B Condens Matter ; 50(24): 18367-18374, 1994 Dec 15.

Artículo en Inglés | MEDLINE | ID: mdl-9976273

11.

Infrared-absorption spectra of acceptors confined in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic field.

Zhao QX; Pasquarello A; Holtz PO; Monemar B; Willander M.

Phys Rev B Condens Matter ; 50(15): 10953-10957, 1994 Oct 15.

Artículo en Inglés | MEDLINE | ID: mdl-9975200

12.

Magnetic-field-induced localization effects on radiative recombination in GaAs/AlxGa1-xAs heterostructures.

Zhao QX; Monemar B; Holtz PO; Lundström T; Sundaram M; Merz JL; Gossard AC.

Phys Rev B Condens Matter ; 50(11): 7514-7517, 1994 Sep 15.

Artículo en Inglés | MEDLINE | ID: mdl-9974734

13.

Shake-up intersubband processes in quantum-well luminescence.

Holtz PO; Zhao QX; Monemar B; Sundaram M; Merz JL; Gossard AC.

Phys Rev B Condens Matter ; 50(7): 4439-4444, 1994 Aug 15.

Artículo en Inglés | MEDLINE | ID: mdl-9976744

14.

Binding energies and diamagnetic shifts for free excitons in symmetric coupled double quantum wells.

Zhao QX; Monemar B; Holtz PO; Willander M; Fimland BO; Johannessen K.

Phys Rev B Condens Matter ; 50(7): 4476-4481, 1994 Aug 15.

Artículo en Inglés | MEDLINE | ID: mdl-9976750

15.

Magneto-optical studies of acceptors confined in GaAs/AlxGa1-xAs quantum wells.

Holtz PO; Zhao QX; Ferreira AC; Monemar B; Pasquarello A; Sundaram M; Merz JL; Gossard AC.

Phys Rev B Condens Matter ; 50(7): 4901-4904, 1994 Aug 15.

Artículo en Inglés | MEDLINE | ID: mdl-9976807

16.

Free and acceptor-bound excitons in the transition region between two-dimensional and quasi-three-dimensional GaAs/AlxGa1-xAs systems.

Zhao QX; Holtz PO; Harris CI; Monemar B; Veje E.

Phys Rev B Condens Matter ; 50(3): 2023-2026, 1994 Jul 15.

Artículo en Inglés | MEDLINE | ID: mdl-9976407

17.

Theoretical calculations of shallow acceptor states in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic field.

Zhao QX; Holtz PO; Pasquarello A; Monemar B; Willander M.

Phys Rev B Condens Matter ; 50(4): 2393-2398, 1994 Jul 15.

Artículo en Inglés | MEDLINE | ID: mdl-9976457

18.

Magnetic properties of the S-like bound hole states in GaAs/AlxGa1-xAs quantum wells.

Zhao QX; Holtz PO; Pasquarello A; Monemar B; Ferreira AC; Sundaram M; Merz JL; Gossard AC.

Phys Rev B Condens Matter ; 49(15): 10794-10797, 1994 Apr 15.

Artículo en Inglés | MEDLINE | ID: mdl-10009919

19.

Electron and hole effective masses from magnetoluminescence studies of modulation-doped InP/In0.53Ga0.47As heterostructures.

Zhao QX; Holtz PO; Monemar B; Lundström T; Wallin J; Landgren G.

Phys Rev B Condens Matter ; 48(16): 11890-11896, 1993 Oct 15.

Artículo en Inglés | MEDLINE | ID: mdl-10007530

20.

Excited states of shallow acceptors confined in GaAs/AlxGa1-xAs quantum wells.

Holtz PO; Zhao QX; Ferreira AC; Monemar B; Sundaram M; Merz JL; Gossard AC.

Phys Rev B Condens Matter ; 48(12): 8872-8877, 1993 Sep 15.

Artículo en Inglés | MEDLINE | ID: mdl-10007105

RESUMEN

ENVIAR RESULTADO:

SELECCIÓN DE REFERENCIAS

DETALLE DE LA BÚSQUEDA