RESUMEN
The proximity-effect, whereby materials in contact appropriate each other's electronic-properties, is widely used to induce correlated states, such as superconductivity or magnetism, at heterostructure interfaces. Thus far however, demonstrating the existence of proximity-induced charge-density-waves (PI-CDW) proved challenging. This is due to competing effects, such as screening or co-tunneling into the parent material, that obscured its presence. Here we report the observation of a PI-CDW in a graphene layer contacted by a 1T-TaS2 substrate. Using scanning tunneling microscopy (STM) and spectroscopy (STS) together with theoretical-modeling, we show that the coexistence of a CDW with a Mott-gap in 1T-TaS2 coupled with the Dirac-dispersion of electrons in graphene, makes it possible to unambiguously demonstrate the PI-CDW by ruling out alternative interpretations. Furthermore, we find that the PI-CDW is accompanied by a reduction of the Mott gap in 1T-TaS2 and show that the mechanism underlying the PI-CDW is well-described by short-range exchange-interactions that are distinctly different from previously observed proximity effects.
RESUMEN
Electrical manipulation of the valley degree of freedom in transition metal dichalcogenides is central to developing valleytronics. Towards this end, ferromagnetic contacts, such as Ga(Mn)As and permalloy, have been exploited to inject spin-polarized carriers into transition metal dichalcogenides to realize valley-dependent polarization. However, these materials require either a high external magnetic field or complicated epitaxial growth steps, limiting their practical applications. Here we report van der Waals heterostructures based on a monolayer WSe2 and an Fe3GeTe2/hexagonal boron nitride ferromagnetic tunnelling contact that under a bias voltage can effectively inject spin-polarized holes into WSe2, leading to a population imbalance between ±K valleys, as confirmed by density functional theory calculations and helicity-dependent electroluminescence measurements. Under an external magnetic field, we observe that the helicity of electroluminescence flips its sign and exhibits a hysteresis loop in agreement with the magnetic hysteresis loop obtained from reflective magnetic circular dichroism characterizations on Fe3GeTe2. Our results could address key challenges of valleytronics and prove promising for van der Waals magnets for magneto-optoelectronics applications.
RESUMEN
The rare-earth hexaboride SmB6, known as the topological Kondo insulator, has attracted tremendous attention in recent years. It was revealed that the topological phase of SmB6 is insensitive to the value of on-site Coulomb interactions (Hubbard U), indicating that the topological phase in SmB6 is robust against strong correlations. On the contrary, the isostructural YbB6 displays a sensitivity to the Hubbard U value. As U increases, YbB6 transforms from topological Kondo insulator to trivial insulator, showing the weak robustness of the topological phase of YbB6 against U. Consequently, the dependence of the topological phase on Hubbard U is a crucial issue in the rare-earth hexaboride family. In this work, we investigate the structural and electronic properties of rare-earth hexaboride compounds through first-principles calculations based on density functional theory. By taking the strong correlations into consideration using a wide range of on-site U values, we study the evolution of the topological phases in rare-earth hexaboride (XB6, X = La, Ce, Pr, Nd, Pm, Sm, Eu). Unlike YbB6, the topological trends in all the examples of XB6 studied in this work are insensitive to the U values. We conclude that in addition to the well-known SmB6, PmB6, NdB6 and EuB6 are also topologically nontrivial compounds, whereas LaB6, CeB6 and PrB6 are topologically trivial metal.