RESUMEN
Highly sensitive and flexible pressure sensors were developed based on dielectric membranes composed of insulating microbeads contained within polyvinylidene fluoride (PVDF) nanofibers. The membrane is fabricated using a simple electrospinning process. The presence of the microbeads enhances porosity, which in turn enhances the sensitivity (1.12 kPa-1 for the range of 0-1 kPa) of the membrane when used as a pressure sensor. The microbeads are fixed in position and uniformly distributed throughout the nanofibers, resulting in a wide dynamic range (up to 40 kPa) without any sensitivity loss. The fluffy and nonsticky PVDF nanofiber features low hysteresis and ultrafast response times (â¼10 ms). The sensor has also demonstrated reliable pressure detection over 10â¯000 loading cycles and 250 bending cycles at a 13 mm bending radius. These pressure sensors were successfully applied to detect heart rate and respiratory signals, and an array of sensors was fabricated and used to recognize spatial pressure distribution. The sensors described herein are ultrathin and ultralight, with a total thickness of less than 100 µm, including the electrodes. All of the materials comprising the sensors are flexible, making them suitable for on-body applications such as tactile sensors, electronic skins, and wearable healthcare devices.
RESUMEN
The fingerprint recognition has been widely used for biometrics in mobile devices. Existing fingerprint sensors have already been commercialized in the field of mobile devices using primarily Si-based technologies. Recently, mutual-capacitive fingerprint sensors have been developed to lower production costs and expand the range of application using thin-film technologies. However, since the mutual-capacitive method detects the change of mutual capacitance, it has high ratio of parasitic capacitance to ridge-to-valley capacitance, resulting in low sensitivity, compared to the self-capacitive method. In order to demonstrate the self-capacitive fingerprint sensor, a switching device such as a transistor should be integrated in each pixel, which reduces a complexity of electrode configuration and sensing circuits. The oxide thin-film transistor (TFT) can be a good candidate as a switching device for the self-capacitive fingerprint sensor. In this work, we report a systematic approach for self-capacitive fingerprint sensor integrating Al-InSnZnO TFTs with field-effect mobility higher than 30 cm2/Vs, which enable isolation between pixels, by employing industry-friendly process methods. The fingerprint sensors are designed to reduce parasitic resistance and capacitance in terms of the entire system. The excellent uniformity and low leakage current (<10-12) of the oxide TFTs allow successful capture of a fingerprint image.