Control of crystallization and magnetic properties of CoFeB by boron concentration.

Controlling the crystallinity of CoFeB is the most essential issue for designing various spintronics devices. Here we show the microstructure and magnetic properties of MgO/CoFeB/MgO structures for various boron concentration. We present the effect of boron on the crystallinity of CoFeB into two categories: the critical boron concentration (5 ~ 6%) at which CoFeB crystallizes and the effect of remaining boron (0 ~ 5%) in the crystallized CoFeB. And the trends of the saturation magnetization, exchange stiffness, exchange length, domain wall energy and Gilbert damping constant according to the boron concentration are provided. Abrupt variation of properties near the critical boron concentration (5 ~ 6%) and a noticeable change in the crystallized CoFeB (0 ~ 5%) are confirmed, revealing a clear causal relationship with the structural analysis. These results propose that the crystallization, microstructure, and major magnetic properties of CoFeB are governed by the amount of boron, and emphasize the need for delicate control of boron concentration.

Field dependence of switching currents in an exchange biased spin valve.

Current induced magnetic reversal due to spin transfer torque is a promising candidate in advanced information storage technology. It has been intensively studied. This work reports the field-dependence of switching-currents for current induced magnetization switching in a uncoupled nano-sized cobalt-based spin valve of exchange biased type. The dependency is investigated in hysteretic regime at room temperature, in comparison with that of a trilayer simple spin valve. In the simple spin valve, the switching currents behave to the positive and the negative applied magnetic field symmetrically. In the exchange biased type, in contrast, the switching currents respond to the negative field in a quite unusual and different manner than to the positive field. A negative magnetic field then can shift the switching-currents into either negative or positive current range, dependently on whether a parallel or an antiparallel state of the spin valve was produced by that field. This different character of switching currents in the negative field range can be explained by the effect of the exchange bias pinning field on the spin-polarizer (the fixed Co layer) of the exchange biased spin valve. That unidirectional pinning filed could suppress the thermal magnetization fluctuation in the spin-polarizer, leading to a higher spin polarization of the current, and hence a lower switching current density than in the simple spin valve.