RESUMEN
We report first-principles calculations of the current-voltage ( I-V) characteristics of a molecular device and compare with experiment. We find that the shape of the I-V curve is largely determined by the electronic structure of the molecule, while the presence of single atoms at the molecule-electrode interface play a key role in determining the absolute value of the current. The results show that such simulations would be useful for the design of future microelectronic devices for which the Boltzmann-equation approach is no longer applicable.
RESUMEN
We present first-principles calculations on electrical conduction through carbon atomic wires. The changes in charge distribution induced by a large bias exhibit the primary involvement of the wire's pi states. A significant fraction ( approximately 40%) of the voltage drops across the atomic wire itself. At zero bias, there is a large transfer of charge from the electrodes to the wire, effectively providing doping without introducing scattering centers. This transfer leads, however, to potential barriers at the wire-electrode junctions. Bending the wire reduces its conductance.
RESUMEN
The electrical resistance of wires consisting of either a single xenon atom or two xenon atoms in series was measured and calculated on the basis of an atom-jellium model. Both the measurement and the calculation yielded a resistance of 10(5) ohms for the single-xenon atom system and 10(7) ohms for the two-xenon atom system. These resistances greatly exceeded the 12,900-ohm resistance of an ideal one-dimensional conduction channel because conduction through the xenon atoms occurs through the tail of the xenon 6s resonance, which lies far above the Fermi level. This conduction process in an atom-sized system can now be understood in terms of the electronic states of individual atoms.
