Trajectories of technogenic tritium in the Rhône River (France).

Tritium is a radioisotope of hydrogen with a half-life of 12.32 years and was used for its luminescent properties by the watchmaking industry from 1962 to the 2008. Tritiated luminescent salts were integrated in the paints applied on the index and dial of watches and clocks. French and Swiss watchmaking workshops used more than 28 000 TBq of tritium over this period of time and produced almost 350 million watches. Despite the end of tritiated salts use in watchmaking workshops in 1992 in France and 2008 in Switzerland, high level of organically bound tritium (OBT) are still observed in sediments of the Rhône River downstream the Lake Geneva. Contamination of the Rhône River by tritiated hot particles since 1962 up to nowadays remains poorly documented. In order to assess the long term behavior and fate of technogenic tritium in this river and its trajectories in the river system, two sediment cores were collected at the upstream (UC) and downstream (DC) part of the Rhône River in France and OBT contents were determined. For both sedimentary cores, maximum OBT contents were registered over the 1980s when tritium was intensively used by watchmaking industries. These residual OBT contents are 1 000 to 10 000 fold higher than current natural background levels in riverine sediments. The OBT contents progressively decreased since 1989 with close effective half-life in upstream and downstream area (5 ± 2 years). The OBT contents were lower in DC than in UC due to the dilution by uncontaminated sediments delivered by tributaries not affected by the watchmaking industries. Trajectories analysis indicates that the resiliency of the Rhône River system in regards to this contamination would be reached in 14-70 years and in 14-28 years respectively for the upstream and downstream part of the river.

Measuring the lifetime of silicon nanocrystal solar cell photo-carriers by using Kelvin probe force microscopy and x-ray photoelectron spectroscopy.

We report the first measurements of photo-carrier lifetimes in silicon nanocrystal-based third generation solar cells by Kelvin force microscopy and x-ray photoelectron spectroscopy under modulated frequency light illumination. A high concentration of active defects at the interface between the nanocrystals and silicon oxide matrix may be passivated by annealing under hydrogen. We found that the carrier lifetime, τ, is τ = 7 × 10(-5) s and τ = 3.5 × 10(-5) s within 10% accuracy for the hydrogen passivated and non-passivated nanocrystals, respectively. We used an exponential model to confirm the experimental potential measurements and to estimate photo-carrier lifetimes.

[Community pharmacist and vaccination: actuality and opportunity]. / Le pharmacien d'officine et la vaccination : actualité et opportunité

Improving the vaccinal policy has become a major stake in France as in many other developed countries. The neglect of vaccination strategies by citizens has complex and multiple causes. Some are directly linked with recent media controversies about vaccination and with a global lack of confidence toward producers and regulators. Other causes are directly linked with individual behaviors, professional practices and primary care organization. Community pharmacists have a good observing position of this phenomenon, as they are prepositioned on the territory, in constant contact with both outpatients and healthy people. Pharmacist's sociological and technical observations appear to be useful in designing new approaches for improving vaccinal strategies. While the 2012-2017 "vaccine policy" should emphasize the central role of general practitioners in France, these observations invite to develop innovative collaboration with pharmacists in the search of a better vaccine coverage.

Film-thickness-dependent conduction in ordered Si quantum dot arrays.

In recent years, silicon nanostructures have been investigated extensively for their potential use in photonic and photovoltaic applications. So far, for silicon quantum dots embedded in SiO(2), control over inter-dot distance and size has only been observed in multiple bilayer stacks of silicon-rich oxides and silicon dioxide. In this work, for the first time the fabrication of spatially well-ordered Si quantum dots (QDs) in SiO(2) is demonstrated, without using the multilayer approach. This ordered formation, confirmed with TEM micrographs, depends on the thickness of the initially deposited sub-stoichiometric silicon oxide film. Grazing incidence x-ray diffraction confirms the crystallinity of the 5 nm QDs while photoluminescence shows augmented bandgap values. Low-temperature current-voltage measurements demonstrate film thickness and order-dependent conduction mechanisms, showing the transition from temperature-dependent conduction in randomly placed dots to temperature-independent tunnelling for geometrically ordered nanocrystals. Contrary to expectations from dielectric materials, significant conduction and photocarrier generation have been observed in our Si QDs embedded in SiO(2) demonstrating the possibility of forming initial film-thickness-controlled conductive films. This conduction via the silicon quantum dots in thick single layers is a promising result for integration into photovoltaic devices.