RESUMEN
Micro-light emitting diodes (µ-LEDs) are considered the key enabler for various high-resolution micro-display applications such as augmented reality, smartphones or head-up displays. Within this study we fabricated nitride-based µ-LED arrays in a thin film chip architecture with lateral pixel sizes down to 1 µm. A metal mirror on the p-side enhances the light outcoupling via the n-side after removal of the epitaxial growth substrate. Mounted devices with pixel sizes ranging from 1×1 to 8×8 µm2 were electro-optically characterized within an integrating sphere and in a goniometer system. We measure increased external quantum efficiencies on smaller devices due to a higher light extraction efficiency (LEE) as predicted by wave optical simulations. Besides this size dependence of the LEE, also the far field properties show a substantial change with pixel size. In addition, we compared µ-LEDs with 40 nm and 80 nm thick aluminium oxide around the pixel mesa. Considerably different far field patterns were observed which indicate the sensitivity of optical properties to any design changes for tiny µ-LEDs. The experimentally obtained radiation behavior could be reasonably predicted by finite-difference time-domain simulations. This clearly reveals the importance of understanding and modeling wave optical effects inside µ-LED devices and the resulting impact on their optical performance.
RESUMEN
Micro-light emitting diodes (µ-LEDs) suffer from a drastic drop in internal quantum efficiency that emerges with the miniaturization of pixels down to the single micrometer size regime. In addition, the light extraction efficiency (LEE) and far field characteristics change significantly as the pixel size approaches the wavelength of the emitted light. In this work, we systematically investigate the fundamental optical properties of nitride-based µ-LEDs with the focus on pixel sizes from 1 µm to 5 µm and various pixel sidewall angles from 0∘ to 60∘ using finite-difference time-domain simulations. We find that the LEE strictly increases with decreasing pixel size, resulting in a LEE improvement of up to 45% for a 1 µm pixel compared to a 20 µm pixel. The ideal pixel sidewall angle varies between 35∘ and 40∘, leading to a factor of 1.4 enhancement with respect to vertical pixel sidewalls. For pixel sizes in the order of 2 µm and smaller, a substantial transition of far field properties can be observed. Here, the far field shape depends severely on the pixel sidewall angle and affects the LEE within a solid angle of ±15∘. Moreover, we investigate the impact of emission wavelength and observe major differences in optical characteristics for blue, green and red emitting pixels, which is relevant for real-world applications. Finally, we discuss the implications of the assumptions we made and their significance for the design of µ-LEDs.
RESUMEN
Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (µLEDs) are increasingly gaining interest today, motivated by the future applications of µLEDs in augmented reality displays or for nanometrology and sensor technology. A key aspect of this miniaturization is the influence of the structure size on the electrical and optical properties of µLEDs. Thus, in this article, investigations of the size dependence of the electro-optical properties of µLEDs, with diameters in the range of 20 to 0.65 µm, by current-voltage and electroluminescence measurements are described. The measurements indicated that with decreasing size leakage currents in the forward direction decrease. To take advantage of these benefits, the surface has to be treated properly, as otherwise sidewall damages induced by dry etching will impair the optical properties. A possible countermeasure is surface treatment with a potassium hydroxide based solution that can reduce such defects.