Vertical Strain-Driven Antiferromagnetic to Ferromagnetic Phase Transition in EuTiO3 Nanocomposite Thin Films.

Three-dimensional (3D) strain induced in self-assembled vertically aligned nanocomposite (VAN) epitaxial films provides an unrivaled method to induce very large strains in thin films. Here, by growing VAN films of EuTiO3 (ETO)-Eu2O3 (EO) with different EO fractions, the vertical strain was systematically increased in ETO, up to 3.15%, and the Eu-Ti-Eu bond angle along ⟨111⟩ decreased by up to 1°, leading to a weakening of the antiferromagnetic interactions and switching from antiferromagnetic to ferromagnetic behavior. Our work has shown for the first time that Eu-Ti-Eu superexchange interactions play a key role in determining the magnetic ground state of ETO. More broadly, our work serves as an exemplar to show that multifunctionalities in strong spin-lattice coupling perovskite oxides can be uniquely tuned at the atomic scale using simple VAN structures.

All-Oxide Nanocomposites to Yield Large, Tunable Perpendicular Exchange Bias above Room Temperature.

In all-oxide-based spintronic devices, large exchange bias effect with robustness against temperature fluctuation and compatibility with perpendicular magnetic recording is highly desired. In this work, rock-salt antiferromagnetic NiO with a Néel temperature ( TN) of ∼525 K and spinel ferrimagnetic NiFe2O4 with a high Curie temperature, TC, ≈ 790 K and TC > TN were chosen as compatible materials to form a well-phase-separated, vertically aligned nanocomposite thin film. In this nanoengineered thin film, an exchange bias effect with a blocking temperature far above room temperature has been achieved. A large perpendicular exchange bias field of up to 0.91 kOe with an interfacial exchange energy density of 0.11-0.34 erg/cm2 was obtained at room temperature. It was also demonstrated that the exchange bias effect can be easily tuned by changing the alignment of the magnetic moments in the NiO phase using substrates of different crystalline orientations and by changing the microstructure of the film with substrates of different lattice parameters. The results demonstrate that proper choice of the phases (including use of nonperovskite compositions) and careful strain engineering and nanostructure engineering makes oxide nanocomposites strong potential candidate systems for next generation spintronic devices.

Large-scale and structure-tunable laser spectral compression in an optical dispersion-increasing fiber.

Laser spectral compression by a factor of 102.8 is experimentally achieved through optical soliton propagation in a dispersion-increasing fiber. By varying the input pulse energy, the wavelength tuning range of the compressed spectral peak could exceed 115 nm. Spectrally compressed spectrum with two bright peaks is demonstrated for the first time, to our knowledge. The structure of the dual-peaked compressed spectra is adjustable through the interplay of initial pulse chirp and energy. All of the experimental data are compared to numerical results and are found in good agreement.

Conductance quantization in a Ag filament-based polymer resistive memory.

Resistive switching and conductance quantization are systematically studied in a Ag/poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester/indium-tin oxide sandwich structure. The observed bipolar switching behavior can be attributed to the formation and dissolution of Ag filaments during positive and negative voltage sweeps, respectively. More importantly, conductance quantization with both integer and half integer multiples of single atomic point contact can be realized by slowing down the voltage sweep speed as well as by pulse measurement. The former may reflect the formed Ag filaments with different atomic point contacts, while the latter probably originates from the interaction between the Ag filaments and the elemental hydrogen provided by the organic storage medium. With appropriate current compliances, low resistance states with desired quantized conductance values are successfully achieved, thus showing the potential for ultrahigh density memory applications. Besides, 100 successive switching cycles with densely distributed resistance values of each resistance state and extrapolated retention properties over ten years are also demonstrated.

A split-path schema-based RFID data storage model in supply chain management.

In modern supply chain management systems, Radio Frequency IDentification (RFID) technology has become an indispensable sensor technology and massive RFID data sets are expected to become commonplace. More and more space and time are needed to store and process such huge amounts of RFID data, and there is an increasing realization that the existing approaches cannot satisfy the requirements of RFID data management. In this paper, we present a split-path schema-based RFID data storage model. With a data separation mechanism, the massive RFID data produced in supply chain management systems can be stored and processed more efficiently. Then a tree structure-based path splitting approach is proposed to intelligently and automatically split the movement paths of products . Furthermore, based on the proposed new storage model, we design the relational schema to store the path information and time information of tags, and some typical query templates and SQL statements are defined. Finally, we conduct various experiments to measure the effect and performance of our model and demonstrate that it performs significantly better than the baseline approach in both the data expression and path-oriented RFID data query performance.

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer.

Through the one-step plasma oxidation of TiN thin films at room temperature (a simple semiconductor technology compatible method), a partly oxidised structure of titanium oxynitride (TiN(x)O(y)) with a TiO(2-x) nanolayer on top has been prepared for non-volatile resistive switching memory devices. The fabricated Pt/TiO(2-x)/TiN(x)O(y)/TiN memory devices demonstrate complementary resistive switching behaviours within an operation voltage of 1 V. The complementary resistive switching behaviours can be explained by redistribution of the oxygen vacancies between the Pt/TiO(2-x) top interface and the TiO(2-x)/TiN(x)O(y) bottom interface in the TiO(2-x) nanolayer. A model concerning the resistive switching mechanism as well as a recover program of a failed device is also proposed. Our work provides a possible cost-efficient solution to suppress the sneak-path problem in nanoscale crossbar memory arrays.

Behavior-based cleaning for unreliable RFID data sets.

Radio Frequency IDentification (RFID) technology promises to revolutionize the way we track items and assets, but in RFID systems, missreading is a common phenomenon and it poses an enormous challenge to RFID data management, so accurate data cleaning becomes an essential task for the successful deployment of systems. In this paper, we present the design and development of a RFID data cleaning system, the first declarative, behavior-based unreliable RFID data smoothing system. We take advantage of kinematic characteristics of tags to assist in RFID data cleaning. In order to establish the conversion relationship between RFID data and kinematic parameters of the tags, we propose a movement behavior detection model. Moreover, a Reverse Order Filling Mechanism is proposed to ensure a more complete access to get the movement behavior characteristics of tag. Finally, we validate our solution with a common RFID application and demonstrate the advantages of our approach through extensive simulations.