RESUMEN
The integration of fast and power efficient electro-absorption modulators on silicon is of utmost importance for a wide range of applications. To date, Franz-Keldysh modulators formed of bulk Ge or GeSi have been widely adopted due to the simplicity of integration required by the modulation scheme. Nevertheless, to obtain operation for a wider range of wavelengths (O to C band) a thick stack of Ge/GeSi layers forming quantum wells is required, leading to a dramatic increase in the complexity linked to sub-micron waveguide coupling. In this work, we present a proof-of-concept integration between micro-metric waveguides, through the butt-coupling of a [Formula: see text] thick N-rich silicon nitride (SiN) waveguide with a [Formula: see text] thick silicon waveguide for O-band operation. A numerical analysis is conducted for the design of the waveguide-to-waveguide interface, with the aim to minimize the power coupling loss and back-reflection levels. The theoretical results are compared to the measured data, demonstrating a coupling loss level of [Formula: see text] for TE and TM polarisation. Based on the SiN-SOI interconnection simulation strategy, the simulation results of a quantum-confined Stark effect (QCSE) stack waveguide coupled to a SiN waveguide are then presented.
RESUMEN
Increasing the working optical bandwidth of a photonic circuit is important for many applications, in particular chemical sensing at mid-infrared wavelengths. This useful bandwidth is not only limited by the transparency range of waveguide materials, but also the range over which a waveguide is single or multimoded for predictable circuit behaviour. In this work, we show the first experimental demonstration of "endlessly single-mode" waveguiding in silicon photonics. Silicon-on-insulator waveguides were designed, fabricated and characterised at 1.95 µm and 3.80 µm. The waveguides were shown to support low-loss propagation (1.46 ± 0.13 dB/cm loss at 1.95 µm and 1.55 ± 0.35 dB/cm at 3.80 µm) and single-mode propagation was confirmed at 1.95 µm, meaning that only the fundamental mode was present over the wavelength range 1.95 - 3.80 µm. We also present the prospects for the use of these waveguides in sensing applications.
RESUMEN
In this paper we theoretically investigate a ring resonant cavity obtained by closing on itself a π-shifted fiber Bragg grating, to be used for refractive index sensing applications. Differently from a conventional π-shifted fiber Bragg grating, the spectral structure of this cavity is characterized by an asymmetric splitting doublet composed by a right side resonance having an asymmetric Fano profile and a left side resonance having a symmetric Lorentzian profile. The right side resonance shows a narrower and sharper peak than all the other kinds of resonance achievable with both conventional ring resonators and π-shifted fiber Bragg gratings. A reduction of the resonant linewidth with respect to a conventional π-shifted Fiber Bragg grating and a fiber ring resonator, having the same physical parameters, is theoretically proved, achieving up to five orders of magnitude improvement with respect to the usual ring resonator. Due to these resonance features, the π-shifted Bragg grating ring resonator results suitable for RI sensing applications requiring extremely narrow resonances for high resolution measurements. In particular, by assuming a refractive index sensing to detect the presence of sugar in water, the sensor can show a theoretical resolution better than 10-9 RIU.
RESUMEN
In this paper, we report on theoretical investigation of split mode resonant sensors based on fiber Bragg grating (FBG) ring resonators and π-shifted fiber Bragg grating (π-FBG) ring resonators. By using a π-shifted Bragg grating ring resonator (π-FBGRR) instead of a conventional fiber Bragg grating ring resonator (FBGRR), the symmetric and antisymmetric resonance branches (i.e., the eigen-modes of the perturbed system) show peculiar and very important features that can be exploited to improve the performance of the fiber optic spectroscopic sensors. In particular, the π-FBGRR symmetric resonance branch can be taylored to have a maximum splitting sensitivity to small environmental perturbations. This optimal condition has been found around the crossing points of the two asymmetric resonance branches, by properly choosing the physical parameters of the system. Then, high sensitivity splitting mode sensors are theoretically demonstrated showing, as an example, a strain sensitivity improvement of at least one order of magnitude over the state-of-the-art.