Using Mosaicity to Tune Thermal Transport in Polycrystalline Aluminum Nitride Thin Films.

The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 vs 8.09 W/mK are measured for samples with tilt angles of 10° versus 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

Observation of a low temperature n-p transition in individual titania nanotubes.

Manipulating the transport properties of titania nanotubes (NTs) is paramount in guaranteeing the material's successful implementation in various solid state applications. Here we present the unique semiconducting properties of individual titania NTs as revealed from thermoelectric and structural studies performed on the same individual NTs. The NTs were in the anatase phase fabricated by anodic oxidation and doped with intrinsic defects created by reducing the lattice thermally. Despite their polycrystalline nature and nanoscale walls, the doped NTs were found to be 4-5 orders of magnitude more electrically conducting than TiO2 nanowires and thin films, with values approaching the bulk single crystal conductivity. The reason for the high conductivity was found to be the high carrier concentration on the order of 1022 cm-3, which counteracted the low mobility values ∼0.006 cm2 V-1 s-1. Furthermore, this high level of carrier concentration transitioned the NTs to a degenerate state, which is the first such example in thermally doped titania NTs. More importantly, our study showed the creation of acceptor states along with donor states in individual nanotubes upon lattice reduction. These acceptor levels were found to be active at low temperatures when donor states were not ionized, shifting the Fermi level (Ef) from the conduction band to the valence band.

Effect of Metal Doping and Vacancies on the Thermal Conductivity of Monolayer Molybdenum Diselenide.

It is well understood that defect engineering can give rise to exotic electronic properties in transition-metal dichalcogenides, but to this date, there is no detailed study to illustrate how defects can be engineered to tailor their thermal properties. Here, through combined experimental and theoretical approaches based on the first-principles density functional theory and Boltzmann transport equations, we have explored the effect of lattice vacancies and substitutional tungsten (W) doping on the thermal transport of the suspended molybdenum diselenide (MoSe2) monolayers grown by chemical vapor deposition (CVD). The results show that even though the isoelectronic substitution of the W atoms for Mo atoms in CVD-grown Mo0.82W018Se2 monolayers reduces the Se vacancy concentration by 50% compared to that found in the MoSe2 monolayers, the thermal conductivity remains intact in a wide temperature range. On the other hand, Se vacancies have a detrimental effect for both samples and more so in the Mo0.82W018Se2 monolayers, which results in thermal conductivity reduction up to 72% for a vacancy concentration of 4%. This is because the mass of the W atom is larger than that of the Mo atom, and missing a Se atom at a vacancy site results in a larger mass difference and therefore kinetic energy and potential energy difference. Furthermore, the monotonically increasing thermal conductivity with temperature for both systems at low temperatures indicates the importance of boundary scattering over defects and phonon-phonon scattering at these temperatures.

In-Plane Thermal Conductivity of Radial and Planar Si/SiOx Hybrid Nanomembrane Superlattices.

Silicon, although widely used in modern electronic devices, has not yet been implemented in thermoelectric applications mainly due to its high thermal conductivity, κ, which leads to an extremely low thermoelectric energy conversion efficiency (figure of merit). Here, we present an approach to manage κ of Si thin-film-based nanoarchitectures through the formation of radial and planar Si/SiOx hybrid nanomembrane superlattices (HNMSLs). For the radial Si/SiOx HNMSLs with various numbers of windings (1, 2, and 5 windings), we observe a continuous reduction in κ with increasing number of windings. Meanwhile, the planar Si/SiOx HNMSL, which is fabricated by mechanically compressing a five-windings rolled-up microtube, shows the smallest in-plane thermal conductivity among all the reported values for Si-based superlattices. A theoretical model proposed within the framework of the Born-von Karman lattice dynamics to quantitatively interpret the experimental data indicates that the thermal conductivity of Si/SiOx HNMSLs is to a great extent determined by the phonon processes in the SiOx layers.

Thermal-structural relationship of individual titania nanotubes.

The thermal properties of nano-scale materials are largely influenced by their geometry. The zero, one and quasi one dimensional forms of the same material could exhibit unique thermal transport properties depending upon the shape and nano-scale feature size. In order to gain a clear understanding of the contributions from geometrical scattering effects on thermal transport, it is required to study these nano-materials in a single isolated form rather than in clusters or films. In the past decade, titanium dioxide nanotube arrays fabricated by anodic oxidation of titanium emerged as a useful semiconductor architecture for a variety of applications, particularly for solar energy conversion. Nonetheless, the thermal properties of individual nanotubes that are important for their use in high temperature applications have not been clearly understood. Here we report the thermal transport properties of individual titania nanotubes as revealed by our preliminary study using a suspended microdevice that facilitates the thermal conductivity measurements and crystal structure investigation on the same nanotube. The nanotubes were prepared by anodic oxidation of a titanium foil in HF-DMSO electrolyte at 60 V, having outer diameters in the range of 200 to 300 nm and wall thicknesses of ∼30 to 70 nm in either amorphous or polycrystalline anatase phase. The thermal conductivity of single nanotubes was found to be very close to that of the amorphous phase (1.5 W mK(-1) and 0.85 W mK(-1) respectively) and it was only half of the thermal conductivity of the nanotube arrays in the film form. The thermal conductivity of bulk TiO2 is known to be almost six times higher. The observed thermal conductivity suppression in single nanotubes was explained using a transport model developed by considering diffuse phonon-surface scattering and scattering of phonons by ionized impurities of concentrations in the order of 10(18)-10(19) cm(-3).

Efficient light trapping in inverted nanopyramid thin crystalline silicon membranes for solar cell applications.

Thin-film crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer and reduce material usage. Here we demonstrate that an inverted nanopyramid light-trapping scheme for c-Si thin films, fabricated at wafer scale via a low-cost wet etching process, significantly enhances absorption within the c-Si layer. A broadband enhancement in absorptance that approaches the Yablonovitch limit (Yablonovitch, E. J. Opt. Soc. Am.1987, 72, 899-907 ) is achieved with minimal angle dependence. We also show that c-Si films less than 10 µm in thickness can achieve absorptance values comparable to that of planar c-Si wafers thicker than 300 µm, amounting to an over 30-fold reduction in material usage. Furthermore the surface area increases by a factor of only 1.7, which limits surface recombination losses in comparison with other nanostructured light-trapping schemes. These structures will not only significantly curtail both the material and processing cost of solar cells but also allow the high efficiency required to enable viable c-Si thin-film solar cells in the future.

Probing electronic properties of molecular engineered zinc oxide nanowires with photoelectron spectroscopy.

ZnO nanowires (NWs) are emerging as key elements for new lasing, photovoltaic and sensing applications but elucidation of their fundamental electronic properties has been hampered by a dearth of characterization tools capable of probing single nanowires. Herein, ZnO NWs were synthesized in solution and integrated into a low energy photoelectron spectroscopy system, where quantitative optical measurements of the NW work function and Fermi level location within the band gap were collected. Next, the NWs were decorated with several dipolar self-assembled monolayers (SAMs) and control over the electronic properties is demonstrated, yielding a completely tunable hybrid electronic material. Using this new metrology approach, a host of other extraordinary interfacial phenomena could be explored on nanowires such as spatial dopant profiling or heterostructures.

Four-probe measurements of the in-plane thermoelectric properties of nanofilms.

Measuring in-plane thermoelectric properties of submicron thin films has remained a challenging task. Here we report a method based on a suspended microdevice for four-probe measurements of the Seebeck coefficient, thermal conductivity, electrical conductivity, and thermoelectric figure of merit of patterned indium arsenide (InAs) nanofilms assembled on the microdevice. The contact thermal resistance and intrinsic thermal resistance of the 40 nm thick InAs nanofilm sample were measured by using the nanofilm itself as a differential thermocouple to determine the temperature drops at the contacts. The microdevice was also used to measure a 190 nm thick silicon dioxide (SiO(2)) film and the results were compared with those reported in the literature. A through-substrate hole under the suspended microdevice allows for transmission electron microscopy characterization of the nanofilm sample assembled on the device. This capability enables one to correlate the measured thermoelectric properties with the crystal structures of the nanofilm.