1.
Opt Express
; 19(24): 23664-70, 2011 Nov 21.
Artículo
en Inglés
| MEDLINE
| ID: mdl-22109392
RESUMEN
Natural lithography with 100-nm-diameter SiO(2) spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from 250 nm to 550 nm. Photodiodes fabricated from the surface-textured SiC showed broader spectral and angular responsivity than SiC photodiodes with SiO(2) antireflective coating. The textured SiC photodiodes showed peak responsivity of 116 mA/W, large angle of acceptance angle (< 2% decrease in responsivity at 50° incident angle) and low dark current at 10V.