Hydrogen-Induced Ultralow Optical Absorption and Mechanical Loss in Amorphous Silicon for Gravitational-Wave Detectors.

The sensitivity of gravitational-wave detectors is limited by the mechanical loss associated with the amorphous coatings of the detectors' mirrors. Amorphous silicon has higher refraction index and lower mechanical loss than current high-index coatings, but its optical absorption at the wavelength used for the detectors is at present large. The addition of hydrogen to the amorphous silicon network reduces both optical absorption and mechanical loss for films prepared under a range of conditions at all measured wavelengths and temperatures, with a particularly large effect on films grown at room temperature. The uptake of hydrogen is greatest in the films grown at room temperature, but still below 1.5 at.% H, which show an ultralow optical absorption (below 10 ppm) measured at 2000 nm for 500-nm-thick films. These results show that hydrogenation is a promising strategy to reduce both optical absorption and mechanical loss in amorphous silicon, and may enable fabrication of mirror coatings for gravitational-wave detectors with improved sensitivity.

From amorphous to nanocrystalline: the effect of nanograins in an amorphous matrix on the thermal conductivity of hot-wire chemical-vapor deposited silicon films.

We have measured the thermal conductivity of amorphous and nanocrystalline silicon films with varying crystalline content from 85 K to room temperature. The films were prepared by the hot-wire chemical-vapor deposition, where the crystalline volume fraction is determined by the hydrogen (H2) dilution ratio to the processing silane gas (SiH4), R = H2/SiH4. We varied R from 1 to 10, where the films transform from amorphous for R < 3 to mostly nanocrystalline for larger R. Structural analyses show that the nanograins, averaging from 2 to 9 nm in sizes with increasing R, are dispersed in the amorphous matrix. The crystalline volume fraction increases from 0 to 65% as R increases from 1 to 10. The thermal conductivities of the two amorphous silicon films are similar and consistent with the most previous reports with thicknesses no larger than a few µm deposited by a variety of techniques. The thermal conductivities of the three nanocrystalline silicon films are also similar, but are about 50-70% higher than those of their amorphous counterparts. The heat conduction in nanocrystalline silicon films can be understood as the combined contribution in both amorphous and nanocrystalline phases, where increased conduction through improved nanocrystalline percolation path outweighs increased interface scattering between silicon nanocrystals and the amorphous matrix.

Excess specific heat in evaporated amorphous silicon.

The specific heat C of e-beam evaporated amorphous silicon (a-Si) thin films prepared at various growth temperatures T(S) and thicknesses t was measured from 2 to 300 K, along with sound velocity v, shear modulus G, density n(Si), and Raman spectra. Increasing T(S) results in a more ordered amorphous network with increases in n(Si), v, G, and a decrease in bond angle disorder. Below 20 K, an excess C is seen in films with less than full density where it is typical of an amorphous solid, with both a linear term characteristic of two-level systems (TLS) and an additional (non-Debye) T3 contribution. The excess C is found to be independent of the elastic properties but to depend strongly on density. The density dependence suggests that low energy glassy excitations can form in a-Si but only in microvoids or low density regions and are not intrinsic to the amorphous silicon network. A correlation is found between the density of TLS n0 and the excess T3 specific heat c(ex) suggesting that they have a common origin.