Enhanced photoluminescence stability of CdS nanocrystals through a zinc acetate reagent.

In this study, the role of a zinc acetate precursor in improving the luminescence stability of purple-emitting CdS nanocrystals is investigated. The oleate-capped core of CdS nanocrystals exhibits intense photodarkening under prolonged UV excitation. From the results of photoluminescence experiments, we can observe that photobleaching is responsible for the degradation of temporal stability, i.e., decline in photoluminescence intensity. Herein, we demonstrate that by adding zinc acetate to the synthesis solution, one can enhance the photoluminescence stability by the complete suppression of the bleaching processes of nanocrystals. We can distinguish between the effects caused by zinc ions and those caused by acetate ligands. Acetate ligands improve the photoluminescence stability of the core of CdS nanocrystals. However, only when zinc acetate is used, the PL stability can be conserved at high excitation power. Simultaneously, we have studied the influence of zinc cations and acetate ligands on the kinetics of nanocrystal growth. The presented results underline the importance of short surface capping ligands and zinc cations in CdS nanocrystal synthesis. This study exhibits a new advantage of exploiting zinc acetate reagents in one-pot nanocrystal synthesis.

Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot.

We report on the experimental demonstration of triggered single-photon emission at the telecom O-band from In(Ga)As/GaAs quantum dots (QDs) grown by metal-organic vapor-phase epitaxy. Micro-photoluminescence excitation experiments allowed us to identify the p-shell excitonic states in agreement with high excitation photoluminescence on the ensemble of QDs. Hereby we drive an O-band-emitting GaAs-based QD into the p-shell states to get a triggered single photon source of high purity. Applying pulsed p-shell resonant excitation results in strong suppression of multiphoton events evidenced by the as measured value of the second-order correlation function at zero delay of 0.03 (and ~0.005 after background correction).

Ion-ion interactions in ß-NaGdF4:Yb(3+),Er(3+) nanocrystals--the effect of ion concentration and their clustering.

In this work we report co-thermolysis as a suitable method for nanomaterial synthesis which allows the creation of hexagonal upconverting nanocrystals, NaGdF4:Yb(3+),Er(3+), in a wide range of sizes (20-120 nm). Only a very high Yb(3+) concentration (above 70%) results in pure cubic-phase nanocrystals with irregular shape. Additionally, we showed that the impact of Yb(3+), Er(3+) and Gd(3+) ions on the size and optical properties of nanocrystals is significant. We found that the main changes in optical properties do not depend on the nanocrystal size mostly, but are determined by the ion-ion interactions which include both Er(3+)-Er(3+) and Er(3+)-Yb(3+) cross relaxation.

Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well.

In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ~700 °C and ~760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ~720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.

Passivation of lanthanide surface sites in sub-10 nm NaYF(4):Eu(3+) nanocrystals.

We examined in detail the optical properties of NaYF(4):Eu(3+) nanocrystals of ~9 nm in diameter. For such small nanocrystals roughly 17 % of Y(3+) ions occupy surface sites and can be efficiently substituted by optically active Eu(3+) ions. In order to determine the influence of surface Eu(3+) on the optical properties of the whole nanocrystal, small ß-NaYF(4):Eu(3+) nanocrystals with homogenous size distribution were prepared using trioctylphosphine oxide as a coordinating solvent. In order to passivate the surface sites, a thin ß-NaYF(4) shell was further deposited on nanocrystals core and the optical properties were investigated. For this purpose absorption, photoluminescence, photoluminescence excitation, and photoluminescence decays were recorded and analyzed. The optical characteristics of surface Eu(3+) significantly diminish for surface passivated nanocrystals. We calculated the increase of quantum yield to the value of 64 % when NaYF(4):Eu(3+) core was capped by undoped shell. The optical spectroscopy techniques were shown to be sufficient in determination of surface passivation of nanocrystals with high surface to volume ratio.

Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition.

The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.

Carrier dynamics in type-II GaAsSb/GaAs quantum wells.

Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum wells are presented. The PL kinetics are determined by the dynamic band bending effect and the distribution of localized centers below the quantum well band gap. The dynamic band bending results from the spatially separated electron and hole distribution functions evolving in time. It strongly depends on the optical pump power density and causes temporal renormalization of the quantum well ground-state energy occurring a few nanoseconds after the optical pulse excitation. Moreover, it alters the optical transition oscillator strength. The measured PL lifetime is 4.5 ns. We point out the critical role of the charge transfer processes between the quantum well and localized centers, which accelerate the quantum well photoluminescence decay at low temperature. However, at elevated temperatures the thermally activated back transfer process slows down the quantum well photoluminescence kinetics. A three-level rate equation model is proposed to explain these observations.

Management of Helicobacter pylori-related disorders.

The discovery of Helicobacter pylori has opened new opportunities in the management of gastrointestinal disorders, with the cure of chronic ulcer disease now being possible for the first time. The 1994 United States National Institutes of Health Consensus Conference recommended that patients with duodenal or gastric ulcers unrelated to the use of non-steroidal anti-inflammatory drugs (NSAID) should be given eradication therapy. These guidelines were refined at a conference held recently in Maastricht. The updated guidelines strongly recommend treatment in patients with duodenal or gastric ulcer disease, low-grade mucosa-associated lymphoid tissue (MALT) gastric lymphoma, gastritis with severe macro-or microscopic changes and after resection of early gastric cancer. Despite a lack of hard scientific evidence, the guidelines also suggest that eradication treatment is advisable in patients with unequivocally diagnosed functional dyspepsia, a family history of gastric cancer, long-term treatment with proton-pump inhibitors for gastro-oesophageal reflux disease (GORD), planned or existing NSAID treatment, after gastric surgery for ulcer or cancer, or if the patient wants to be treated. Many different therapeutic regimens have been used previously, but at present the best treatment is proton-pump inhibitor-based triple therapy, comprising a proton-pump inhibitor plus two drugs out of clarithromycin, a nitroimidazole and amoxycillin. One-week low-dose triple therapy cures 85-95% of infected patients.

Correlation between stress and carrier nonradiative recombination for silicon nanocrystals in an oxide matrix.

Silicon nanocrystals embedded in an oxide matrix formed in a multilayer architecture were deposited by the magnetron sputtering method. By means of Raman spectroscopy we have found that compressive stress is exerted on the silicon nanocrystal core. The stress varies as a function of silicon concentration (O/Si ratio) in the silicon-rich oxide (SRO) layers, which can be attributed to the changing nanocrystal environment. By conducting the time-resolved spectroscopy experiment, we demonstrate that, depending on the nanocrystal surroundings, a different amount of nonradiative recombination sites participates in the excited carrier relaxation process, leading to changes of the relative quantum yield of photoluminescence.

On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals.

The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples.

Model of hopping excitons in GaInNAs: simulations of sharp lines in micro-photoluminescence spectra and their dependence on the excitation power and temperature.

The model of hopping excitons in semiconductors proposed by Baranovskii et al (1998 Phys. Rev. B 58 13081) has been modified and applied to explain sharp lines observed in micro-photoluminescence (µ-PL) spectra of GaInNAs alloys and their changes with excitation power and temperature. Instead of two types of recombination centres (radiative and nonradiative centres) introduced by Baranovskii et alwe have proposed one kind of localization centre with radiative and nonradiative rates. Such a modification is justifiable due to our recent experimental observations for GaInNAs alloys and allows us to explain the fast thermal quenching of localized emission from this alloy. Our simulations clearly show that the individual sharp PL lines observed at low temperatures appear for this material due to exciton hopping between localization centres. Taking into account saturation effects and the exciton dissociation phenomenon, it has been shown that the observed changes in power- and temperature dependent µ-PL spectra can be excellently reproduced by the modified model.

Temperature dependent emission quenching for silicon nanoclusters.

Silicon reach-silicon-oxide (SRSO) film containing silicon nanoclusters was obtained by the reactive magnetron sputtering. Photoluminescence (PL) spectra were measured as a function of temperature at different excitation wavelengths and additionally at different excitation power densities. Obtained PL spectra characterize by two emission bands centered at 1.6 and 2.4 eV. For these bands, temperature behaviour of PL intensities strongly differs but clearly correlate each other. Moreover, it has been observed that obtained PL intensities versus temperature exhibit a strong dependence on the excitation power density in the low temperature range.

Quantitative evaluation of boron-induced disorder in multilayers containing silicon nanocrystals in an oxide matrix designed for photovoltaic applications.

The effect of doping by boron on optical properties of multilayers containing Si-NCs were studied by means of photoluminescence (PL), time-resolved PL, photoluminescence excitation (PLE), transmission and reflection measurements. It was found that PL decay is strongly non-single exponential and can be described by means of Laplace transform of log-normal decay rates distribution. It was also proposed that changes observed in the distribution central moments reflect the disorder induced by boron-doping.

Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films.

The effects of the stoichiometry of the Si-rich oxide (SRO) layer, O/Si ratio, on the structural and optical properties of SRO/SiO2 multilayer films were investigated in this work. SRO/SiO2 multilayer films with different O/Si ratios were grown by a co-sputtering technique, and Si quantum dots (QDs) were formed with post-deposition annealing. By transmission electron microscopy (TEM) and glancing incidence x-ray diffraction (GIXRD), it was found that the Si QD size decreases with increases in O/Si ratio. The photoluminescence (PL) spectrum varies with the O/Si ratio in band position, shape and intensity. In addition, it was observed that the absorption edge blue-shifts with increases in the O/Si ratio. The change in the absorption edge is consistent with strengthening quantum confinement effects in Si QDs, as indicated by TEM and GIXRD. The optical properties were also investigated by 2D photoluminescence excitation (2D-PLE) and lifetime measurements. The origin of emission and absorption is discussed based on the absorption, PL, 2D-PLE and decay time measurements.

Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations.

Experimental setup for measurements of photoreflectance (PR) and contactless electroreflectance (CER) spectra in bright and dark configurations is described in this work and applied to study various semiconductor structures. The innovative solution in this setup is the possibility to measure PR and CER spectra in both experimental configurations with the same halogen lamp, monochromator, detector, and only very small modification in the optical path. In this setup the measurement conditions for the two experimental configurations are very similar, and the obtained PR and CER spectra can be compared and discussed in the context of the unwanted constant photovoltaic (PV) effect, which appears in the bright configuration when the sample is illuminated by the spectrum of white light instead of the monochromatic light. It has been clearly shown that for (i) epitaxial layers, (ii) quantum wells, and (iii) quantum dots, exactly the same spectral features are observed in both configurations at room temperature. It means that from the viewpoint of the detection of optical transitions, it is not important what configuration is used since the white light-induced PV effect does not influence the energy of optical transitions in these structures.

Spin coherence of holes in GaAs/(Al,Ga)As quantum wells.

Carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas is studied by picosecond pump-probe Kerr rotation. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations: Electron spin beats decaying with the charged exciton radiative lifetime of 50 ps, and long-lived hole spin beats with dephasing times up to 650 ps, which decrease with increasing temperature, underlining the importance of hole localization. The mechanism of hole spin coherence generation is discussed.

TEM study of indium and gallium nitride nanocrystals in silica gasses obtained by the sol-gel method.

GaN and InN nanocrystals in silica glasses prepared by the sol-gel method were studied by transmission electron microscopy techniques. Morphology, structure and phase composition of silica gel containing Ga or In as function of the calcination and nitridation temperature were investigated.

Motility of Helicobacter pylori in a viscous environment.

BACKGROUND: Patients with gastroduodenal disease produce gastric mucus of higher viscosity, and mucins that are of a smaller size, than normal. We have modelled these changes to the mucus layer in solutions of methylcellulose, and measured bacterial motility in biopsied mucus, to assess how they might influence the movements of Helicobacter pylori. METHODS: Motilities of Helicobacter pylori were measured in solutions of methylcellulose with molecular mass of 14 and 41 kDa, and in biopsied mucus with a Hobson BacTracker. Four parameters of bacterial motility were quantified: curvilinear velocity (CLV), path length, track linearity and curvature rate. RESULTS: All H. pylori were motile in methylcellulose solutions, and had optimal motilities at a viscosity of 3 cp (CLV in methylcellulose of 41 kDa, for instance, was 33 +/- 1.4 microm/s (mean +/- SEM) and the path length in methylcellulose of 41 kDa was 22.4 +/- 2 microm). At higher viscosities, mean CLVs, path lengths and curvature rates decreased, and track linearities increased in direct proportion to the increase in methylcellulose viscosity. Bacteria become non-motile at a viscosity of 50 cp in methylcellulose of 14 kDa, and at 70 cp in methylcellulose of 41 kDa. Mean CLVs, path lengths and curvature rates (but not track linearities) were greater in methylcellulose of 41 kDa than in methylcellulose of 14 kDa at each viscosity tested. Motilities of H. pylori from patients with duodenal ulcer or non-ulcer dyspepsia in methylcellulose solutions were not significantly different. H. pylori had poor motility in biopsied mucus, but became highly motile when biopsied mucus was diluted with saline. CONCLUSIONS: The viscosity-motility profiles of H. pylori in methylcellulose and the motilities of H. pylori in biopsied mucus suggest (1) that H. pylori may have poor motility in mucus at the epithelial surface, but high motility at the luminal surface of the mucus layer, and (2) that the increased mucus viscosity and decreased mucin size in patients with gastroduodenal disease act in combination to decrease H. pylori motility in vivo.