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1.
ACS Appl Mater Interfaces ; 14(51): 56948-56956, 2022 Dec 28.
Artículo en Inglés | MEDLINE | ID: mdl-36520047

RESUMEN

It is known that Yb-filled skutterudite with excellent thermoelectric performance is promising for a power generation device in the intermediate temperature region. Here we created a new approach to obtain nanostructured materials by adding Si to Co-overstoichiometric Yb-filled skutterudite through high-energy ball milling, which embedded bottom-up formed CoSi2 nanoparticles into grain-refining Yb0.25Co4Sb12, synergistically resulting in the enhanced thermoelectric properties and room-temperature hardness. On one hand, the abundant grain boundaries and phase interfaces effectively blocked the propagation of medium-low frequency phonons, resulting in a lower lattice thermal conductivity. On the other hand, phase interfaces barrier nicely screened a portion of low-energy electrons, leading to an improved power factor. As a result, an enhanced peak ZT value of ∼1.43 at 823 K and a promising average ZT of ∼1.00 between 300 and 823 K were achieved in the Yb0.25Co4Sb12/0.05CoSi2 sample. Meanwhile, such nanostructures also enhanced the hardness through the collective contributions of second phase and fine grain strengthening, which made skutterudite more competitive in practical application.

2.
Science ; 365(6460): 1418-1424, 2019 09 27.
Artículo en Inglés | MEDLINE | ID: mdl-31604269

RESUMEN

Thermoelectric technology allows conversion between heat and electricity. Many good thermoelectric materials contain rare or toxic elements, so developing low-cost and high-performance thermoelectric materials is warranted. Here, we report the temperature-dependent interplay of three separate electronic bands in hole-doped tin sulfide (SnS) crystals. This behavior leads to synergistic optimization between effective mass (m*) and carrier mobility (µ) and can be boosted through introducing selenium (Se). This enhanced the power factor from ~30 to ~53 microwatts per centimeter per square kelvin (µW cm-1 K-2 at 300 K), while lowering the thermal conductivity after Se alloying. As a result, we obtained a maximum figure of merit ZT (ZT max) of ~1.6 at 873 K and an average ZT (ZT ave) of ~1.25 at 300 to 873 K in SnS0.91Se0.09 crystals. Our strategy for band manipulation offers a different route for optimizing thermoelectric performance. The high-performance SnS crystals represent an important step toward low-cost, Earth-abundant, and environmentally friendly thermoelectrics.

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