Microscopic investigation of the memory effect found in micropatterned nematic liquid crystal cells.

Isotropic untreated indium-tin-oxide layers can cause memory alignment of nematic liquid crystals. We have demonstrated an experimental method to characterize this effect by using a micropatterned surface. We tried to imprint a high tilt on an indium-tin-oxide substrate surface. We also investigated microscopic switching behavior of a memory-induced nematic liquid crystal cell by means of a vertical field effect.