RESUMEN
We develop a novel metal contact approach using an antimony (Sb)-platinum (Pt) bilayer to mitigate Fermi-level pinning in 2D transition metal dichalcogenide channels. This strategy allows for control over the transport polarity in monolayer WSe2 devices. By adjustment of the Sb interfacial layer thickness from 10 to 30 nm, the effective work function of the contact/WSe2 interface can be tuned from 4.42 eV (p-type) to 4.19 eV (n-type), enabling selectable n-/p-FET operation in enhancement mode. The shift in effective work function is linked to Sb-Se bond formation and an emerging n-doping effect. This work demonstrates high-performance n- and p-FETs with a single WSe2 channel through Sb-Pt contact modulation. After oxide encapsulation, the maximum current density at |VD| = 1 V reaches 170 µA/µm for p-FET and 165 µA/µm for n-FET. This approach shows promise for cost-effective CMOS transistor applications using a single channel material and metal contact scheme.
RESUMEN
Engineering atomic-scale defects has become an important strategy for the future application of transition metal dichalcogenide (TMD) materials in next-generation electronic technologies. Thus, providing an atomic understanding of the electron-defect interactions and supporting defect engineering development to improve carrier transport is crucial to future TMDs technologies. In this work, we utilize low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) to elicit how distinct types of defects bring forth scattering potential engineering based on intervalley quantum quasiparticle interference (QPI) in TMDs. Furthermore, quantifying the energy-dependent phase variation of the QPI standing wave reveals the detailed electron-defect interaction between the substitution-induced scattering potential and the carrier transport mechanism. By exploring the intrinsic electronic behavior of atomic-level defects to further understand how defects affect carrier transport in low-dimensional semiconductors, we offer potential technological applications that may contribute to the future expansion of TMDs.
RESUMEN
In this article, a 0.7 nm thick monolayer MoS2nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high-κmetal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410µAµm-1with a large on/off ratio of 6 × 108at drain voltage = 1 V. The extracted contact resistance is 0.48 ± 0.1 kΩµm in monolayer MoS2NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications.
RESUMEN
Carbon nanotube (CNT) transistors demonstrate high mobility but also experience off-state leakage due to the small effective mass and band gap. The lower limit of off-current (IMIN) was measured in electrostatically doped CNT metal-oxide-semiconductor field-effect transistors (MOSFETs) across a range of band gaps (0.37 to 1.19 eV), supply voltages (0.5 to 0.7 V), and extension doping levels (0.2 to 0.8 carriers/nm). A nonequilibrium Green's function (NEGF) model confirms the dependence of IMIN on CNT band gap, supply voltage, and extension doping level. A leakage current design space across CNT band gap, supply voltage, and extension doping is projected based on the validated NEGF model for long-channel CNT MOSFETs to identify the appropriate device design choices. The optimal extension doping and CNT band gap design choice for a target off-current density are identified by including on-current projection in the leakage current design space. An extension doping level >0.5 carrier/nm is required for optimized on-current.
RESUMEN
Because of the lack of contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in the contact regions. In the present study, we used chloroauric acid (HAuCl4) as a strong p-dopant for WSe2 monolayers used in transistors. The HAuCl4-doped devices exhibited a record-low contact resistance of 0.7 kΩ·µm under a doping concentration of 1.76 × 1013 cm-2. In addition, an extrinsic carrier diffusion phenomenon was discovered in the HAuCl4-WSe2 system. With a suitably designed spacer length for doping, a normally off, high-performance underlap top-gate device can be produced without the application of additional gating in the contact and spacer regions.
RESUMEN
Scaling of monolayer transition metal dichalcogenide (TMD) field-effect transistors (FETs) is an important step toward evaluating the application space of TMD materials. Although some work on ultrashort channel monolayer (ML) TMD FETs has been published, there exist no comprehensive studies that assess their performance in a statistically relevant manner, providing critical insights into the impact of the device geometry. Part of the reason for the absence of such a study is the substantial variability of TMD devices when processes are not carefully controlled. In this work, we show a statistical study of ultrashort channel double-gated ML WS2 FETs exhibiting excellent device performance and limited device-to-device variations. From a detailed analysis of cross-sectional scanning transmission electron microscopy (STEM) images and careful technology computer aided design (TCAD) simulations, we evaluated, in particular, an unexpected deterioration of the subthreshold characteristics for our shortest devices. Two potential candidates for the observed behavior were identified, i.e., buckling of the TMD on the substrate and loss of gate control due to the source geometry and the high-k dielectric between the metal gate and the metal source electrode.
RESUMEN
Large-area 2D-material-based devices may find applications as sensor or photonics devices or can be incorporated in the back end of line (BEOL) to provide additional functionality. The introduction of highly scaled 2D-based circuits for high-performance logic applications in production is projected to be implemented after the Si-sheet-based CFET devices. Here, a view on the requirements needed for full wafer integration of aggressively scaled 2D-based logic circuits, the status of developments, and the definition of the gaps to be bridged is provided. Today, typical test vehicles for 2D devices are single-sheet devices fully integrated in a lab environment, but transfer to a more scaled device in a fab environment has been demonstrated. This work reviews the status of the module development, including considerations for setting up fab-compatible process routes for single-sheet devices. While further development on key modules is still required, substantial progress is made for MX2 channel growth, high-k dielectric deposition, and contact engineering. Finally, the process requirements for building ultra-scaled stacked nanosheets are also reflected on.
RESUMEN
The continuous variability of SARS-CoV-2 and the rapid waning of specific antibodies threatens the efficacy of COVID-19 vaccines. We aimed to evaluate antibody kinetics one year after SARS-CoV-2 vaccination with an mRNA vaccine in healthcare workers (HCW), with or without a booster. A marked decline in anti-Spike(S)/Receptor Binding Domain (RBD) antibody levels was registered during the first eight months post-vaccination, followed by a transitory increase after the booster. At three months post-booster an increased antibody level was maintained only in HCW vaccinated after a prior infection, who also developed a higher and long-lasting level of anti-S IgA antibodies. Still, IgG anti-nucleocapsid (NCP) fades five months post-SARS-CoV-2 infection. Despite the decline in antibodies one-year post-vaccination, 68.2% of HCW preserved the neutralization capacity against the ancestral variant, with a decrease of only 17.08% in the neutralizing capacity against the Omicron variant. Nevertheless, breakthrough infections were present in 6.65% of all participants, without any correlation with the previous level of anti-S/RBD IgG. Protection against the ancestral and Omicron variants is maintained at least three months after a booster in HCW, possibly reflecting a continuous antigenic stimulation in the professional setting.
RESUMEN
Introduction: SARS-CoV-2 infection rates and related mortality in elderly from residential care facilities are high. The aim of this study was to explore the immune status after COVID-19 vaccination in people 65 years and older. Methods: The study involved volunteer participants living in residential care facilities. The level of anti-Spike/RBD antibodies was measured at 2-12 weeks after complete vaccination, using chemiluminescent microparticle immunoassay (SARS-CoV-2 IgG II Quant Abbott). Results: We have analyzed 635 serum samples collected from volunteers living in 21 Residential Care Facilities. With one exception, in which the vaccination was done with the Moderna vaccine, all volunteers received the Pfizer-Comirnaty vaccine. Individuals enrolled in the study had ages between 65-110 years (median 79 years). Of the people tested, 54.8% reported at least one comorbidity and 59.2% reported having had COVID-19 before vaccination. The presence of anti-S/RBD antibodies at a protective level was detected in 98.7% of those tested (n = 627 persons) with a wide variation of antibody levels, from 7.1 to 5,680 BAU/ml (median 1287 BAU/ml). Antibody levels appeared to be significantly correlated to previous infection (r = 0.302, p = 0.000). Conclusions: The study revealed the presence of anti-SARS CoV-2 antibodies in a significant percentage of those tested (98.7%). Of these, more than half had high antibody levels. Pre-vaccination COVID-19 was the only factor found to be associated with higher anti-S/RBD levels. The significant response in elderly people, even in those with comorbidities, supports the vaccination measure for this category, irrespective of associated disabilities or previous infection.
RESUMEN
BACKGROUND AND AIM: Treatment with sorafenib causes diverse side effects, which limits adherence. This work assesses whether Home Care, a psychosocial nursing intervention, prolongs the duration of treatment in patients with advanced hepatocellular carcinoma (HCC) and if it influences health-related quality of life (HRQL). METHODS AND RESULTS: This is a cohort study using data from patients receiving sorafenib in the prospective Bern HCC Cohort at the University Hospital. Duration of treatment, overall survival, and HRQL using the Functional Assessment of Cancer Therapy-Hepatobiliary questionnaire were compared in the two groups. A total of 173 patients were eligible for the analysis. Among them, 141 were in the Home Care program, and 32 were not. Patients with Home Care had a significantly longer duration of treatment (265 days vs 152 days, P = 0.003) and a better functional well-being (17.7 vs 12.5, P = 0.015). CONCLUSION: Psychosocial interventions such as Home Care are a valid method in improving adherence to sorafenib and can therefore be recommended.
RESUMEN
In view of its epitaxial seeding capability, c-plane single crystalline sapphire represents one of the most enticing, industry-compatible templates to realize manufacturable deposition of single crystalline two-dimensional transition metal dichalcogenides (MX2) for functional, ultrascaled, nanoelectronic devices beyond silicon. Despite sapphire being atomically flat, the surface topography, structure, and chemical termination vary between sapphire terraces during the fabrication process. To date, it remains poorly understood how these sapphire surface anomalies affect the local epitaxial registry and the intrinsic electrical properties of the deposited MX2 monolayer. Therefore, molybdenum disulfide (MoS2) is deposited by metal-organic chemical vapor deposition (MOCVD) in an industry-standard epitaxial reactor on two types of c-plane sapphire with distinctly different terrace and step dimensions. Complementary scanning probe microscopy techniques reveal an inhomogeneous conductivity profile in the first epitaxial MoS2 monolayer on both sapphire templates. MoS2 regions with poor conductivity correspond to sapphire terraces with uncontrolled topography and surface structure. By intentionally applying a substantial off-axis cut angle (1° in this work), the sapphire terrace width and step height-and thus also surface structure-become more uniform across the substrate and MoS2 conducts the current more homogeneously. Moreover, these effects propagate into the extrinsic MoS2 device performance: the field-effect transistor variability reduces both within and across wafers at higher median electron mobility. Carefully controlling the sapphire surface topography and structure proves an essential prerequisite to systematically study and control the MX2 growth behavior and capture the influence on its structural and electrical properties.
RESUMEN
Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS2 material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 µS/µm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS2 transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. Finally, using a power performance area (PPA) analysis, we present a roadmap of material improvements to make 2D devices competitive with silicon gate-all-around devices.
RESUMEN
2D materials offer a pathway for further scaling of CMOS technology. However, for this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same (standard) material. In the specific case of MoS2 field effect transistors (FETs), ambipolar transport is seldom reported, primarily due to the phenomenon of Fermi level pinning (FLP). In this study we identify the possible sources of FLP in MoS2 FETs and resolve them individually. A novel contact transfer technique is used to transfer contacts on top of MoS2 flake devices that results in a significant increase in the hole branch of the transfer characteristics as compared to conventionally fabricated contacts. We hypothesize that the pinning not only comes from the contact-MoS2 interface, but also from the MoS2-substrate interface. We confirm this by shifting to an hBN substrate which leads to a 10 fold increase in the hole current compared to the SiO2 substrate. Furthermore, we analyse MoS2 FETs of different channel thickness on three different substrates, SiO2, hBN and Al2O3, by correlating the p-branch I ON/I OFF to the position of oxide defect band in these substrates. FLP from the oxide is reduced in the case of Al2O3 which enables us to observe ambipolar transport in a bilayer MoS2 FET. These results highlight that MoS2 is indeed an ambipolar material, and the absence of ambipolar transport in MoS2 FETs is strongly correlated to its dielectric environment and processing conditions.
RESUMEN
Spin waves are excitations in ferromagnetic media that have been proposed as information carriers in hybrid spintronic devices with much lower operation power than conventional charge-based electronics. Their wave nature can be exploited in majority gates by using interference for computation. However, a scalable spin-wave majority gate that can be cointegrated alongside conventional electronics is still lacking. Here, we demonstrate a submicrometer inline spin-wave majority gate with fan-out. Time-resolved imaging of the magnetization dynamics by scanning transmission x-ray microscopy illustrates the device operation. All-electrical spin-wave spectroscopy further demonstrates majority gates with submicrometer dimensions, reconfigurable input and output ports, and frequency-division multiplexing. Challenges for hybrid spintronic computing systems based on spin-wave majority gates are discussed.
RESUMEN
The recent demonstration of ferroelectricity in ultrathin HfO2 has kickstarted a new wave of research into this material. HfO2 in the orthorhombic phase can be considered the first and only truly nanoscale ferroelectric material that is compatible with silicon-based nanoelectronics applications. In this article, we demonstrate the ferroelectric control of the magnetic properties of cobalt deposited on ultrathin aluminum-doped, atomic layer deposition-grown HfO2 (tHfO2 = 6.5 nm). The ferroelectric effect is shown to control the shape of the magnetic hysteresis, quantified here by the magnetic switching energy. Furthermore, the magnetic properties such as the remanence are modulated by up to 41%. We show that this modulation does not only correlate with the charge accumulation at the interface but also shows an additional component associated with the ferroelectric polarization switching. An in-depth analysis using first order reversal curves shows that the coercive and interaction field distributions of cobalt can be modulated up to, respectively, 5.8% and 10.5% with the ferroelectric polarization reversal.
RESUMEN
The rapid cadence of MOSFET scaling is stimulating the development of new technologies and accelerating the introduction of new semiconducting materials as silicon alternative. In this context, 2D materials with a unique layered structure have attracted tremendous interest in recent years, mainly motivated by their ultra-thin body nature and unique optoelectronic and mechanical properties. The development of scalable synthesis techniques is obviously a fundamental step towards the development of a manufacturable technology. Metal-organic chemical vapor deposition has recently been used for the synthesis of large area TMDs, however, an important milestone still needs to be achieved: the ability to precisely control the number of layers and surface uniformity at the nano-to micro-length scale to obtain an atomically flat, self-passivated surface. In this work, we explore various fundamental aspects involved in the chemical vapor deposition process and we provide important insights on the layer-dependence of epitaxial MoS2 film's structural properties. Based on these observations, we propose an original method to achieve a layer-controlled epitaxy of wafer-scale TMDs.
RESUMEN
Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the possibility of ambipolar conduction, tungsten diselenide (WSe2) provides a platform for the efficient implementation of polarity-controllable transistors. These transistors use an additional gate, named polarity gate, that, due to the electrostatic doping of the Schottky junctions, provides a device-level dynamic control of their polarity, that is, n- or p-type. Here, we experimentally demonstrate a complete doping-free standard cell library realized on WSe2 without the use of either chemical or physical doping. We show a functionally complete family of complementary logic gates (INV, NAND, NOR, 2-input XOR, 3-input XOR, and MAJ) and, due to the reconfigurable capabilities of the single devices, achieve the realization of highly expressive logic gates, such as exclusive-OR (XOR) and majority (MAJ), with fewer transistors than possible in conventional complementary metal-oxide-semiconductor logic. Our work shows a path to enable doping-free low-power electronics on 2D semiconductors, going beyond the concept of unipolar physically doped devices, while suggesting a road to achieve higher computational densities in two-dimensional electronics.
RESUMEN
The microwave dielectric properties of (Ba0.1Pb0.9)(Zr0.52Ti0.48)O3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.