1.
Phys Rev Lett
; 87(10): 106102, 2001 Sep 03.
Artículo
en Inglés
| MEDLINE
| ID: mdl-11531489
RESUMEN
The first direct calorimetric measurements of the energetics of metal film growth on a semiconductor surface are presented. The heat of adsorption of Ag on Si(100)-(2 x 1) at 300 K decreases from approximately 347 to 246 kJ/mol with coverage in the first monolayer (ML) due to overlap of substrate strain from nearby Ag islands. It then rises quickly toward the bulk sublimation enthalpy (285 kJ/mol) as 3D particles grow. A wetting layer grows to 1.0 ML, but is metastable above approximately 0.55 ML and dewets when kinetics permit. This may be common when adsorbate islands induce a large strain in the substrate surface nearby.
2.
J Consult Clin Psychol
; 45(1): 70-7, 1977 Feb.
Artículo
en Inglés
| MEDLINE
| ID: mdl-845308