Photon upconversion with directed emission.

Photon upconversion has the potential to increase the efficiency of single bandgap solar cells beyond the Shockley Queisser limit. Efficient light management is an important point in this context. Here we demonstrate that the direction of upconverted emission can be controlled in a reversible way, by embedding anthracene derivatives together with palladium porphyrin in a liquid crystalline matrix. The system is employed in a triplet-triplet annihilation photon upconversion scheme demonstrating controlled switching of directional anti Stokes emission. Using this approach an emission ratio of 0.37 between the axial and longitudinal emission directions and a directivity of 1.52 is achieved, reasonably close to the theoretical maximal value of 2 obtained from a perfectly oriented sample. The system can be switched for multiple cycles without any visible degradation and the speed of switching is only limited by the intrinsic rate of alignment of the liquid crystalline matrix.

V -shaped switching ferroelectric liquid crystal structure stabilized by dielectric surface layers.

The " V -shaped switching" mode in high polarization ferroelectric liquid crystals was studied with the aim of stabilizing the monostable bookshelf structure with the spontaneous polarization parallel to the glass plates. The director field in such cells was confirmed to be sensitive to both the liquid crystal properties and the cell parameters. In cells with only polyimide alignment layers, hysteresis free switching was never obtained, with bistable and asymmetric monostable structures compromising the zero-field dark state and preventing an ideal, hysteresis-free analog response. By incorporating a SiO(2) layer between the ITO electrode and the polyimide, the undesired states were suppressed and essentially hysteresis-free switching was obtained for driving frequencies in the range 0.2-200 Hz . Cells rubbed only on one side give more uniform alignment than cells rubbed on both sides but their inherent asymmetry shifts the long-term dark state away from 0 V and causes the response to gray level voltage modulation to be slightly asymmetric. The formation of different types of states as a function of the values of the surface parameters, and the observed stabilization of the V -shaped switching structure by the dielectric surface layers, are in good agreement with an earlier analysis by Copic [Phys. Rev. E 65, 021701 (2002)].

Possible model of an antiferroelectric twist grain boundary phase.

Using x-ray and optical methods we have probed the structural organization of an antiferroelectric twist grain boundary phase (TGBC(a)) lying between the regular antiferroelectric smectic-C (SmC(a)* and the smectic-Q (SmQ) or isotropic phase. We find that the twist axis is everywhere perpendicular to the local smectic layer normal and that the helical superstructure is incommensurate with the smectic layer structure. The twist grain boundaries consist of a periodic lattice of alternating +1/2 and -1/2 dispirations, i.e., unit screw dislocations in combination with half unit disclinations. The molecular tilt plane is alternatingly parallel and perpendicular to the twist axis. We find that the optically measured tilt angle in the SmC(a)* phase is smaller than that measured by x rays, which is the opposite to what is found in the SmC* phase. This means that the core part tilts less than the end chains in the SmC(a)* phase, while it tilts more in the SmC* phase. On entering the TGB phase a clear decrease is measured in the tilt angle. This is explained by the elastic influence from the disclinations, which appear in this phase.

Tilt plane orientation in antiferroelectric liquid crystal cells and the origin of the pretransitional effect.

The optic, electro-optic, and dielectric properties of antiferroelectric liquid crystals (AFLCs) are analyzed and discussed in terms of the local tilt plane orientation. We show that the so-called pretransitional effect is a combination of two different electro-optic modes: the field-induced antiphase distortion of the antiferroelectric structure and the field-induced reorientation of the tilt plane. In the presence of a helix, the latter corresponds to a field-induced distortion of the helix. Both electro-optic modes are active only when the electric field has a component along the tilt plane. Thus, by assuring a horizontal surface-stabilized condition, where the helix is unwound by surface action and the tilt plane is everywhere parallel to the cell plates, the pretransitional effect should be suppressed. We also discuss the dielectrically active modes in AFLCs and under which circumstances they contribute to the measured dielectric permittivity.