RESUMEN
We measured the depolarized and polarized Raman spectra of a 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) and found that compressive stress of approximately 20 MPa occurs under the source and gate electrodes and tensile stress of approximately 10 MPa occurs between the source and gate electrodes. The experimental result was in close agreement with the result obtained by calculation using the finite element method (FEM). A combination of Raman spectroscopy and FEM provides much data on the stresses in 4H-SiC MOSFET.
RESUMEN
We measured the Fourier transform infrared (FT-IR) spectra of thermal oxides with various thicknesses, grown thermally on 4H silicon carbide (4H-SiC) substrates. For the thin (8 nm thick) thermal oxide, the transverse optical (TO) phonon peak frequency in the thermal oxide on the 4H-SiC substrate was observed at ~1080 cm-1 and was higher than that recorded in thermal oxides on a Si substrate (1074 cm-1). This shows that the thin thermal oxide was under compressive stress, calculated to be approximately 0.4 GPa, at the interface between the thermal oxide and 4H-SiC substrate. The shift of the TO phonon for s-polarized light was found to be larger than that for p-polarized light. In contrast, for the thick (85 and 130 nm thick) thermal oxides, the TO phonon peak frequency tended to shift toward lower frequencies with increasing oxide-layer thickness. By comparing the FT-IR and cathodoluminescence (CL) measurements, we conclude that the TO phonon redshift with increasing oxide-layer thickness can mainly be attributed to a corresponding increase in inhomogeneity in the thick thermal oxides.
RESUMEN
We measured the Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of silicon dioxide (SiO2) films grown on 4H-silicon carbide (4H-SiC) substrates and confirmed that the phonon observed at around 1150-1250 cm(-1) originates from the upper branch of the surface phonon polaritons (SPPs) in the SiO2 films and that its frequency is sensitive to the oxide thickness. The relative intensity of the upper branch of SPPs normalized by that of the transverse optical phonon (TO) tended to increase with decreasing channel mobility (CM). A comparison of the FT-IR and CL measurements shows that the relative intensity is correlated with an inhomogeneity in the SiO2-SiC interface and the CM of SiC devices. A combination of FT-IR spectroscopy and CL spectroscopy provides us with a large amount of data on the inhomogeneity, defect, and oxide thickness of SiO2 films on 4H-SiC substrates.
RESUMEN
We report the abnormal behavior of longitudinal optical (LO) phonon in a silicon dioxide (SiO2) film on a 4H-SiC bulk epitaxial substrate using an attenuated total reflection (ATR) technique. The peak frequency of the LO phonon in the ATR spectrum was observed at around 1165 cm(-1) and red-shifted by approximately 92 cm(-1) relative to that at the grazing incidence (40°), whereas the peak frequency of the transverse optical (TO) phonon in the ATR spectrum agreed well with that at the grazing incidence. Furthermore, the peak frequency of the TO phonon hardly depends on change in the incident angle and thickness, suggesting that the microstructure of the sample is homogeneous within a thickness of 100 nm. On the other hand, we found that the microstructure of the sample was inhomogeneous within a thickness less than 5 nm. Fourier transform infrared (FT-IR) spectroscopy provides us with a large amount of data on microstructures in the SiO2 films on a 4H-SiC substrate.
RESUMEN
We used Fourier transform infrared (FT-IR) spectroscopy to characterize silicon dioxide (SiO(2)) films on a 4H-SiC(0001) Si face. We found that the peak frequency of the transverse optical (TO) phonon in SiO(2) films grown on a 4H-SiC substrate agrees well with that in SiO(2) films grown on a Si substrate, whereas the peak frequency of the longitudinal optical (LO) phonon in SiO(2) films on a 4H-SiC substrate is red-shifted by approximately 50 cm(-1) relative to that in SiO(2) films on a Si substrate. We concluded that this red-shift of the LO phonon is mainly caused by a change in inhomogeneity due to a decrease in density in the SiO(2) films. Furthermore, cathodoluminescence (CL) spectroscopy results indicated that the channel mobility of the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) decreases roughly in proportion to the increase in the intensity of the CL peak at 460 and 490 nm, which is attributed to the increase in the number of oxygen vacancy centers (OVCs). FT-IR and CL spectroscopies provide us with a large amount of data on OVCs in the SiO(2) films on a 4H-SiC substrate.
RESUMEN
Occurrence of a mycotic aneurysm extracranially is extremely rare. We report our experience with a case of mycotic aneurysm that occurred in the external carotid artery accompanying infectious endocarditis. The case was a 33-year-old male. He visited our hospital with principal complaints of weakness in the lower left side and visual difficulty. Multiple cerebral infarctions were noted in a head MRI. In addition, vegetation was noted on the mitral valve in an echocardiogram, and the patient was admitted to cardiology for infectious endocarditis. Aneurysms were noted in the external carotid artery and the posterior cerebral artery in a cerebral angiogram performed before valve replacement. After administration of antibiotics for 5 weeks, radical surgery was performed for the external carotid artery aneurysm that had remained unchanged. With a satisfactory postoperative course, the patient was able to walk independently after mitral valve replacement and was discharged. We have scoured the literature with regard to mycotic aneurysm occurring extracranially and have studied this case because of this characteristic. When performing cerebral angiography to search for a mycotic aneurysm, the area outside the cranium as well as inside must be closely examined.