Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides.

We demonstrate a novel electroluminescence device in which GaN-based µ-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the µ-LED surface. A special µ-LED design enables the operation of our structures even within the limit of low temperatures. A device equipped with a selected WSe2 monolayer flake is shown to act as a stand-alone, electrically driven single-photon source.