RESUMEN
We theoretically analyze the possibility to use a ferromagnetic gate as a spin-polarization filter for one-dimensional electron systems formed in semiconductor heterostructures showing strong Rashba spin-orbit interaction. The proposed device is based on the effect of the breaking time-reversal symmetry due to the presence of weak magnetic fields. For a proper strength and magnetic field orientation there appears an energy interval in the electron energy spectrum at which the orientation of spin states is controlled by the direction of the electron velocity. It leads to the natural spin polarization of the electron current if the Fermi energy falls into this energy interval.
RESUMEN
The effect of spin-involved interaction on the transport properties of disordered two-dimensional electron systems with ferromagnetic contacts is described using a two-component model. Components representing spin-up and spin-down states are supposed to be coupled at a discrete set of points. We have found that due to the additional interference arising in two-component systems the difference between conductances for the parallel and antiparallel orientations of the contact magnetization changes its sign as a function of the length of the conducting channel.