RESUMEN
Beryllium (Be) has been selected as the solid neutron multiplier material for a tritium breeding blanket module in ITER, which is also the primary option of the Chinese TBM program. But the irradiation swelling of beryllium is severe under high temperature, high irradiation damage and high doses of transmutation-induced helium. Advanced neutron multipliers with high stability at high temperature are desired for the demonstration power plant (DEMO) reactors and the China Fusion Engineering Test Reactor (CFETR). Beryllium alloys mainly composed of Be12M (M is W or Ti) phase were fabricated by HIP, which has a high melting point and high beryllium content. Beryllium and beryllide (Be12Ti and Be12W) samples were irradiated by helium ion with 30 keV and 1 × 1018 cm-2 at RT. The microstructures of Be, Be12Ti and Be12W samples were analyzed by SEM and TEM before and after ion irradiation. The average size of the first blistering on the surface of Be-W alloy is about 0.8 µm, and that of secondary blistering is about 79 nm. The surface blistering rates of the beryllium and beryllide samples were also compared. These results may provide a preliminary experimental basis for evaluating the irradiation swelling resistance of beryllium alloy.
RESUMEN
Oxide-dispersion-strengthened (ODS) steels, which contain nano-scale Y-Ti-O particles, are being considered for high-temperature radiation environments of nuclear reactors. It is important to accurately characterize the structure of grain boundaries and understand the behavior of segregation at grain boundaries in ODS steels during irradiation. The effect of heavy ion irradiation at 700 °C on Nanostructured Ferritic Alloy 14YWT was investigated using Atom Probe Tomography. Enrichment of Cr occurs at the grain boundaries as well as at nano oxide particle surfaces in the unirradiated sample. The enrichment of Ti and Y at a grain boundary corresponds with Y-Ti-O nano oxide particles with larger size compared to those in the grain, and the Cr enrichment is particularly accentuated at these larger nano oxide particles. The segregation of W occurs at the grain boundaries that are without nano oxide particles. O is segregated at grain boundaries without oxide particles after irradiation. The segregation behavior of Cr, W, Ti, and Y at the grain boundary in the irradiated samples is similar to that in the unirradiated sample. The nano oxide particles embedded in the grain boundary are a primary reason for the increase in Cr segregation at the grain boundary.
RESUMEN
The thermoelastic martensitic transformation and its reverse transformation of the Cu-Al-Mn cryogenic shape memory alloy, both with and without compressive stress, has been dynamically in situ observed. During the process of thermoelastic martensitic transformation, martensite nucleates and gradually grow up as they cool, and shrink to disappearance as they heat. The order of martensite disappearance is just opposite to that of their formation. Observations of the self-accommodation of martensite variants, which were carried out by using a low temperature metallographic in situ observation apparatus, showed that the variants could interact with each other. The results of in situ synchrotron radiation X-ray and metallographic observation also suggested there were some residual austenites, even if the temperature was below Mf, which means the martensitic transformation could not be 100% accomplished. The external compressive stress would promote the preferential formation of martensite with some orientation, and also hinder the formation of martensite with other nonequivalent directions. The possible mechanism of the martensitic reverse transformation is discussed.
RESUMEN
Anatase TiO(2) nanosheets-based hierarchical spheres with over 90% {001} facets synthesized via a diethylene glycol-solvothermal route were used as photoanodes of dye-sensitized solar cells, which generated an energy conversion efficiency of 7.51%.
RESUMEN
This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs). The nanowire films with the thick ZnO buffer layer (~0.8-1 µm thick) can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, however, and cause the decrease of dye loading absorbed on ZnO nanowires. In order to further investigate the effect of TiO2buffer layer on the performance of ZnO nanowire-based DSSCs, compared with the ZnO nanowire-based DSSCs without a compact TiO2buffer layer, the photovoltaic conversion efficiency and open circuit voltage of the ZnO DSSCs with the compact TiO2layer (~50 nm thick) were improved by 3.9-12.5 and 2.4-41.7%, respectively. This can be attributed to the introduction of the compact TiO2layer prepared by sputtering method, which effectively suppressed carrier recombination occurring across both the film-electrolyte interface and the substrate-electrolyte interface.