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1.
Philos Trans A Math Phys Eng Sci ; 373(2044)2015 Jun 28.
Artículo en Inglés | MEDLINE | ID: mdl-25987575

RESUMEN

Until recently the important role that spin-physics ('spintronics') plays in organic light-emitting devices and photovoltaic cells was not sufficiently recognized. This attitude has begun to change. We review our recent work that shows that spatially rapidly varying local magnetic fields that may be present in the organic layer dramatically affect electronic transport properties and electroluminescence efficiency. Competition between spin-dynamics due to these spatially varying fields and an applied, spatially homogeneous magnetic field leads to large magnetoresistance, even at room temperature where the thermodynamic influences of the resulting nuclear and electronic Zeeman splittings are negligible. Spatially rapidly varying local magnetic fields are naturally present in many organic materials in the form of nuclear hyperfine fields, but we will also review a second method of controlling the electrical conductivity/electroluminescence, using the spatially varying magnetic fringe fields of a magnetically unsaturated ferromagnet. Fringe-field magnetoresistance has a magnitude of several per cent and is hysteretic and anisotropic. This new method of control is sensitive to even remanent magnetic states, leading to different conductivity/electroluminescence values in the absence of an applied field. We briefly review a model based on fringe-field-induced polaron-pair spin-dynamics that successfully describes several key features of the experimental fringe-field magnetoresistance and magnetoelectroluminescence.

2.
Phys Rev Lett ; 109(7): 076603, 2012 Aug 17.
Artículo en Inglés | MEDLINE | ID: mdl-23006391

RESUMEN

X rays produced during electron-beam deposition of metallic electrodes drastically change the performance of organic spintronic devices. The x rays generate traps with an activation energy of ≈0.5 eV in a commonly used organic. These traps lead to a dramatic decrease in spin-diffusion length in organic spin valves. In organic magnetoresistive (OMAR) devices, however, the traps strongly enhance magnetoresistance. OMAR is an intrinsic magnetotransport phenomenon and does not rely on spin injection. We discuss our observations in the framework of currently existing theories.

3.
Phys Rev Lett ; 102(15): 156604, 2009 Apr 17.
Artículo en Inglés | MEDLINE | ID: mdl-19518664

RESUMEN

We present a theory for spin diffusion in disordered organic semiconductors, based on incoherent hopping of a charge carrier and coherent precession of its spin in an effective magnetic field, composed of the random hyperfine field of hydrogen nuclei and an applied magnetic field. From Monte Carlo simulations and an analysis of the waiting-time distribution of the carrier we predict a surprisingly weak temperature dependence, but a considerable magnetic-field dependence of the spin-diffusion length. We show that both predictions are in agreement with experiments on organic spin valves.

4.
Phys Rev Lett ; 99(21): 216801, 2007 Nov 23.
Artículo en Inglés | MEDLINE | ID: mdl-18233239

RESUMEN

We present a mechanism for the recently discovered magnetoresistance in disordered pi-conjugated materials, based on hopping of polarons and bipolaron formation, in the presence of the random hyperfine fields of the hydrogen nuclei and an external magnetic field. Within a simple model we describe the magnetic field dependence of the bipolaron density. Monte Carlo simulations including on-site and longer-range Coulomb repulsion show how this leads to positive and negative magnetoresistance. Depending on the branching ratio between bipolaron formation or dissociation and hopping rates, two different line shapes in excellent agreement with experiment are obtained.

5.
Phys Rev Lett ; 90(4): 046804, 2003 Jan 31.
Artículo en Inglés | MEDLINE | ID: mdl-12570443

RESUMEN

Linear and nonlinear recombination kinetics with various lifetime distributions were identified for long-lived photoexcitations in a series of pi-conjugated polymer films using modulation frequency and excitation intensity dependencies of the photoinduced absorption. This includes monomolecular, bimolecular, and defect-limited recombination processes that lead to saturation. Using generalized kinetics parameters, we found characteristic plots for all recombination processes. Specifically, the bimolecular recombination process shows superlinear intensity dependence away from the steady state; on the contrary, dispersive bimolecular recombination leads to sublinear dependence.

6.
Phys Rev Lett ; 88(19): 197401, 2002 May 13.
Artículo en Inglés | MEDLINE | ID: mdl-12005663

RESUMEN

We have measured the ratio, r = sigma(S)/sigma(T) of the formation cross section, sigma of singlet and triplet excitons from polarons in pi-conjugated oligomer and polymer films, using a spectroscopic technique we developed recently. We discovered a universal relation between r and the conjugation length (CL): r(-1) depends linearly on CL-1, irrespective of the chain structure. Since r is directly related to the maximum possible electroluminescence quantum efficiency in organic light emitting diodes (OLED), our results indicate that polymers have an advantage over small molecules in OLED applications.

7.
Nature ; 409(6819): 494-7, 2001 Jan 25.
Artículo en Inglés | MEDLINE | ID: mdl-11206541

RESUMEN

Electroluminescence in organic light-emitting diodes arises from a charge-transfer reaction between the injected positive and negative charges by which they combine to form singlet excitons that subsequently decay radiatively. The quantum yield of this process (the number of photons generated per electron or hole injected) is often thought to have a statistical upper limit of 25 per cent. This is based on the assumption that the formation cross-section of singlet excitons, sigmaS, is approximately the same as that of any one of the three equivalent non-radiative triplet exciton states, sigmaT; that is, sigmaS/sigmaT approximately 1. However, recent experimental and theoretical work suggests that sigmaS/sigmaT may be greater than 1. Here we report direct measurements of sigmaS/sigmaT for a large number of pi-conjugated polymers and oligomers. We have found that there exists a strong systematic, but not monotonic, dependence of sigmaS/sigmaT on the optical gap of the organic materials. We present a detailed physical picture of the charge-transfer reaction for correlated pi-electrons, and quantify this process using exact valence bond calculations. The calculated sigmaS/sigmaT reproduces the experimentally observed trend. The calculations also show that the strong dependence of sigmaS/sigmaT on the optical gap is a signature of the discrete excitonic energy spectrum, in which higher energy excitonic levels participate in the charge recombination process.

8.
Phys Rev Lett ; 85(10): 2196-9, 2000 Sep 04.
Artículo en Inglés | MEDLINE | ID: mdl-10970496

RESUMEN

Relaxation dynamics of even parity ( A(g)) states in poly( p-phenylene vinylene) derivatives are studied using a novel fsec transient spectroscopy, in which two different excitation pulses successively generate odd parity ( 1 (1)B(u)) excitons at 2.2 eV and then reexcite them to higher A(g) states. For reexcitation energies Planck's over 2piomega<1.1 eV ultrafast internal conversion back to 1 (1)B(u) takes place in accordance with Vavilov-Kasha's rule. However, for Planck's over 2piomega>1.1 eV the decay occurs in a nonemissive state identified as a polaron pair, showing that the A(g) states above 3.3 eV mediate charge transfer.

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