RESUMEN
This study investigates the impact of proton irradiation on perovskite devices fabricated fully through vacuum deposition. Exposure to irradiation induces changes in both electrical and optical properties. The analysis reveals that the main factors influencing the observed performance changes in solar cells are a significant reduction in shunt resistance and a minor increase in series resistance, with minimal alterations in recombination dynamics. Remarkably, the devices maintain promising photodetector characteristics both before and after proton irradiation, particularly in a self-powered mode without a reverse bias. These findings provide valuable insights into the resilience of vacuum-deposited perovskite devices against ionizing radiation, highlighting their potential for applications in radiation-prone environments, such as the nuclear industry or space exploration.
RESUMEN
We apply the contactless quasi-steady-state photoconductance (QSSPC) method to co-evaporated methyl ammonium lead iodide (MAPbI3) perovskite thin-films. Using an adapted calibration for ultralow photoconductances, we extract the injection-dependent carrier lifetime of the MAPbI3 layer. The lifetime is found to be limited by radiative recombination at the high injection densities applied during the QSSPC measurement, enabling the extraction of the electron and hole mobility sum in the MAPbI3 using the known coefficient of radiative recombination of MAPbI3. Combining the QSSPC measurement with transient photoluminescence measurements, performed at much lower injection densities, we obtain the injection-dependent lifetime curve over several orders of magnitude. From the resulting lifetime curve, we determine the achievable open-circuit voltage of the examined MAPbI3 layer.
