Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate.

This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gate, leading to a high photo-to-dark current ratio (PDCR) of 3.2 × 105. The quantum wells of the p-GaN/AlGaN and AlGaN/GaN heterojunctions can trap the holes and electrons excited by the UV illumination, thus efficiently triggering a photovoltaic effect and photoconductive effect, separately. Furthermore, the prepared photodetectors allow flexible adjustment of the static bias point, making it adaptable to different environments. Compared to traditional thin-film semi-transparent Ni/Au gates, indium tin oxide (ITO) exhibits higher transmittance. Under 355 nm illumination, the photodetector exhibited a super-high responsivity exceeding 3.5 × 104 A/W, and it could even exceed 106 A/W under 300 nm illumination. The well-designed UVPD combines both the advantages of the high-transmittance ITO gate and the structure of the commercialized p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs), which opens a new possibility of fabricating large-scale, low-cost, and high-performance UVPDs in the future.

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate.

The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light. To solve this problem, we processed p-GaN gate HEMTs with transparent indium tin oxide (ITO) as the gate terminal and successfully captured the information mentioned above, utilizing ultraviolet reflectivity thermal imaging equipment. The fabricated ITO-gated HEMTs exhibited a saturation drain current of 276 mA/mm and an on-resistance of 16.6 Ω·mm. During the test, the heat was found to concentrate in the vicinity of the gate field in the access area, under the stress of VGS = 6 V and VDS = 10/20/30 V. After 691 s high power stress, the device failed, and a hot spot appeared on the p-GaN. After failure, luminescence was observed on the sidewall of the p-GaN while positively biasing the gate, revealing the side wall is the weakest spot under high power stress. The findings of this study provide a powerful tool for reliability analysis and also point to a way for improving the reliability of the p-GaN gate HEMTs in the future.

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization.

The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the threshold voltage (VTH) of HEMTs under BTI stress by fast sweeping characterizations. The HEMTs without time-dependent gate breakdown (TDGB) stress featured a high VTH shift of 0.62 V. In contrast, the HEMT that underwent 424 s of TDGB stress clearly saw a limited VTH shift of 0.16 V. The mechanism is that the TDGB stress can induce a Schottky barrier lowering effect on the metal/p-GaN junction, thus boosting the hole injection from the gate metal to the p-GaN layer. This hole injection eventually improves the VTH stability by replenishing the holes lost under BTI stress. It is the first time that we experimentally proved that the BTI effect of p-GaN gate HEMTs was directly dominated by the gate Schottky barrier that impeded the hole supply to the p-GaN layer.

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n-n Diodes: The Road to Reliable Vertical MOSFETs.

This work investigates p+n-n GaN-on-Si vertical structures, through dedicated measurements and TCAD simulations, with the ultimate goal of identifying possible strategies for leakage and breakdown optimization. First, the dominant leakage processes were identified through temperature-dependent current-voltage characterization. Second, the breakdown voltage of the diodes was modelled through TCAD simulations based on the incomplete ionization of Mg in the p+ GaN layer. Finally, the developed simulation model was utilized to estimate the impact of varying the p-doping concentration on the design of breakdown voltage; while high p-doped structures are limited by the critical electric field at the interface, low p-doping designs need to contend with possible depletion of the entire p-GaN region and the consequent punch-through. A trade-off on the value of p-doping therefore exists to optimize the breakdown.

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs.

We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I-V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability.

We propose to use a bilayer insulator (2.5 nm Al2O3 + 35 nm SiO2) as an alternative to a conventional uni-layer Al2O3 (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. This analysis has been performed on a test vehicle structure for module development, which has a limited OFF-state performance. We demonstrate that devices with the bilayer dielectric present superior reliability characteristics than those with the uni-layer, including: (i) gate leakage two-orders of magnitude lower; (ii) 11 V higher off-state drain breakdown voltage; and (iii) 18 V higher gate-source breakdown voltage. From Weibull slope extractions, the uni-layer shows an extrinsic failure, while the bilayer presents a wear-out mechanism. Extended reliability tests investigate the degradation process, and hot-spots are identified through electroluminescence microscopy. TCAD simulations, in good agreement with measurements, reflect electric field distribution near breakdown for gate and drain stresses, demonstrating a higher electric field during positive gate stress. Furthermore, DC capability of the bilayer and unilayer insulators are found to be comparable for same bias points. Finally, comparison of trapping processes through double pulsed and Vth transient methods confirms that the Vth shifts are similar, despite the additional interface present in the bilayer devices.

MhNCED3 in Malus hupehensis Rehd. induces NO generation under osmotic stress by regulating ABA accumulation.

Abscisic acid (ABA) biosynthesis has been widely characterized in plants, whereas the effects of ABA biosynthesis on nitric oxide (NO) generation in osmotic stress are less well understood. In this study, Malus hupehensis Rehd. 9-cis-epoxycarotenoid dioxygenase gene (MhNCED3) which is the key gene in ABA biosynthesis was transformed into wild type (WT) and 129B08/nced3 mutant (AtNCED3 deficient), respectively, and two transgenic Arabidopsis lines were obtained. The transgenic Arabidopsis lines displayed higher endogenous ABA content, NO generation rate, AtNIA1 transcript level and nitrate reductase (NR) activity than WT and 129B08/nced3 mutant. Ectopic expression of MhNCED3 reduced the electrolyte leakage and relieved Arabidopsis damage caused by 20% PEG on the growth and development. The ABA content, NO generation rate, AtNIA1 expression and NR activity increased after 20% PEG treatment, importantly, their increases amplitude relative to that in control were higher in two transgenic lines. Additionally, during the treatment for the four genotype Arabidopsis, the time of ABA contents reaching the highest peak was earlier than the time of NO generation, AtNIA1 expression and NR activity reaching their highest peak. These results show that NCED gene indirectly induced endogenous NO generation in osmotic-stressed Arabidopsis partially contributing to the up-regulation of AtNIA1 expression and NR activity.

MhNCED3, a gene encoding 9-cis-epoxycarotenoid dioxygenase in Malus hupehensis Rehd., enhances plant tolerance to Cl- stress by reducing Cl- accumulation.

High Cl(-) concentrations in tissues can be toxic to crop plants and may lead to reduced growth rates and yields. 9-cis-epoxycarotenoid dioxygenase (NCED) is thought to be involved in the biosynthesis of abscisic acid (ABA), which is an important regulator of plant adaptive responses to stress. Here, the expression of MhNCED3 in Malus hupehensis Rehd. and the effects of MhNCED3 on plant tolerance to Cl(-) stress were explored. The results showed that MhNCED3 expression and ABA biosynthesis in M. hupehensis Rehd. were induced by Cl(-) stress. Ectopic expression of MhNCED3 in Arabidopsis complemented the phenotypic defects of the 129B08/nced3 mutant and enhanced WT tolerance to Cl(-) stress. The transgenic Arabidopsis showed improved growth and developmental status, increased ABA contents, and reduced transpiration rates and relative water content. Furthermore, ectopic expression of MhNCED3 decreased Cl(-) accumulation and oxidative damage, and up-regulated the expression levels of AtCLCc (chloride channel protein) and AtSLAH3 (slow anion channel 1 homolog 3) genes in Arabidopsis. These observations suggest that MhNCED3 has critical role in enhancing plant tolerance to Cl(-) stress by reducing Cl(-) accumulation.

[Effects of cadmium stress on fatty acid composition and lipid peroxidation of Malus hupehensis].

This paper studied the fatty acid composition, reactive oxygen species (ROS), lipoxygenase (LOX) activity, and malondialdehyde (MDA) content in the leaves and roots of Malus hupehensis seedlings under effects of cadmium (Cd) stress. Noticeable changes were observed in the kinds and relative contents of fatty acids after treated with CdCl2 for 7-12 hours. The relative contents of unsaturated fatty acids in leaves and roots reached the maximum after treated for 7 hours, being 82. 82% and 72. 43% , respectively. The kinds of fatty acids in leaves increased from 11 to 14 after treated for 12 hours, while those in roots increased from 4 to 6 after treated for 17 hours. The O2* generation rate and the H2O2 content reached the maximum after treated for 3 and 7 hours, respectively, and the MDA content and LOX activity increased with treating time. Cd stress altered the fatty acid composition of Malus hupehensis via the inducement of reactive oxygen species and lipoxygenase, and induced lipid peroxidation, which was caused by both ROS and LOX within the first 12 hours of CdCl2 treatment and mainly by the increase of LOX activity since then.

[Effects of CdCl2 on grape root mitochondrial characteristics and root activity].

Taking the one-year cutting-seedlings of four grape cultivars (Kyoho, Muscat Hamburg, Long Yan, and Ze Xiang) as test materials, their root mitochondrial hydrogen peroxide (H2O2) content, membrane permeability transition pore (MPTP), membrane potential (Deltapsi), cytochrome C (Cyt c) content, and root activity were measured under effects of CdCl2. For all test grape cultivars, the root mitochondrial H2O2 content and MPTP increased, but the Deltapsi, Cyt c content, and root activity decreased after treated with 0.5 mmol CdCl2 x L(-1). The mitochondrial H2O2 content and Cyt c content were in the sequence of Kyoho > Ze Xiang > Muscat Hamburg > Long Yan, while the root activity, MPTP, and Deltapsi were in adverse, i.e., Long Yan > Muscat Hamburg > Ze Xiang > Kyoho. Among the test grape cultivars, the root activity of Kyoho was easier to be inhibited under Cd stress, while that of Long Yan was least affected by CdCl2.