A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.

Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs were fabricated by lithography, nano-imprinting, and top-down etching technology. The defect-pinning effect of the nanostructure was found for the first time. The ratio of the bright regions to the global area in the panchromatic CL images of green MQW samples increased from 30% to about 90% after nano-fabrication. The overall luminous performance significantly improved. Throughout temperature-dependent photoluminescence (TDPL) and time-resolved PL (TRPL) measurements, the migration and recombination of carriers in the MQWs of green LEDs were analyzed. It was proved that nanostructures can effectively prevent carriers from being captured by surrounding nonradiative recombination centers. The overall PL integral intensity can be enhanced to above 18 times. A much lower carrier lifetime (decreasing from 91.4 to 40.2 ns) and a higher internal quantum efficiency (IQE) (increasing from 16.9% to 40.7%) were achieved. Some disputes on the defect influence were also discussed and clarified.

Enhanced light extraction efficiency of an LED package by a surface-mounted amorphous photonic structure.

In this study, we propose a low-cost, simple and feasible post-processing approach to improve the light extraction efficiency (LEE) of LED packages. Amorphous photonic structures (APSs) with only short-range order are fabricated from anodic aluminum oxide (AAO) and transferred to intermediate polymer stamp (IPS) by nanoimprint technology. The IPS with APSs is directly mounted onto the surface of an LED package, where the LEE is achieved as 94.6%. The scanning electron microscope (SEM) images of AAO templates and imprinted IPS are analyzed by radial distribution function and diameter histogram. The far-field patterns of APS-mounted LED packages are measured in electroluminescence (EL). The three-dimensional finite-difference time-domain (3D-FDTD) calculations of transmittance of APSs confirm that they improve the light extraction above the critical angle. Two-dimensional Fourier power spectra from SEM images of APSs are also calculated. The LEE enhancement is attributed to that the APSs have short-range order on a length scale comparable to emission wavelength of LED. We provide novel multistage simulations in a simplified FDTD model for the LED package. Finally, we discuss the influence of the morphology of APSs on the LEE of the APS mounted LEDs.

The effects of dynamic daylight-like light on the rhythm, cognition, and mood of irregular shift workers in closed environment.

Shift workers are mostly suffered from the disruption of circadian rhythm and health problems. In this study, we designed proper light environment to maintain stable circadian rhythm, cognitive performance, and mood status of shift workers. We used five-channel light-emitting diodes to build up the dynamic daylight-like light environment. The illuminance, correlated color temperature, and circadian action factor of light were tunable in the ranges of 226 to 678 lx, 2680 to 7314 K, and 0.32 to 0.96 throughout the day (5:30 to 19:40). During the nighttime, these parameters maintained about 200 lx, 2700 K, and 0.32, respectively. In this light environment, three subjects had engaged in shift work for 38 consecutive days. We measured plasma melatonin, activity counts, continuous performance tests, and visual analogue scale on mood to assess the rhythm, cognitive performance, and mood of subjects. After 38-day shift work, the subjects' peak melatonin concentration increased significantly. Their physiological and behavioral rhythms maintained stable. Their cognitive performance improved significantly after night work, compared with that before night work. Their mood status had no significant change during the 38-day shift work. These results indicated that the light environment was beneficial to maintain circadian rhythm, cognitive performance and mood status during long-term shift work in closed environment.

Investigation on many-body effects in micro-LEDs under ultra-high injection levels.

Micro-LEDs can work under an extremely high injection level and are widely used in high-brightness micro-displays and visible light communication. With the increase of carrier concentration, many-body effects gradually become important factors affecting devices' characteristics. Considering the effects of carrier scattering, bandgap renormalization, and Coulomb enhancement (CE), changes in the electroluminescence spectra of micro-LEDs are analyzed as the current density increases from 49.2 to 358.2 kA/cm2, the latter representing an ultra-high injection level. Affected by plasma screening, CE decreases below about 150 kA/cm2. After that, polarization screening dominates and effectively alleviates the spatial separation of electrons and holes, which results in CE increases to the maximum injection level of 358.2 kA/cm2. It is established that CE promotes radiative recombination processes. Different from the traditional phenomenon of "efficiency droop", the enhanced attraction between carriers leads to an abnormal increase of external quantum efficiency at high current density.

Study on Electron-Induced Surface Plasmon Coupling with Quantum Well Using a Perturbation Method.

Ag nanoparticles (NPs) are filled in a photonic crystal (PhC) hole array on green light emitting diodes (LEDs). The localized surface plasmon (LSP)-quantum well (QW) coupling effect is studied by measuring the cathodoluminescence (CL) spectra impinging at the specific spots on the Ag NPs. Twenty-six percent and fifty-two percent enhancements of the CL intensities are obtained at the center and edge of the Ag NP, respectively, compared to the result that the electron-beam (e-beam) excites the QW directly. To illustrate the coupling process of the three-body system of e-beam-LSP-QW, a perturbation theory combining a three-dimensional (3D) finite difference time domain (FDTD) simulation is put forward. The effects of the polarization orientation of the dipole and the field symmetry of the LSP on the LSP-QW coupling are also discussed.

Investigation on entraining and enhancing human circadian rhythm in closed environments using daylight-like LED mixed lighting.

Humans can undergo circadian disruption and misalignment when living in closed environments without sufficient daylight. Therefore, it is of great significance to investigate the effects of artificial light on the circadian rhythm. In this work, the red, green, blue, warm white, and cool white (RGBWW) five-channel light-emitting diodes (LEDs) were fabricated as the only light sources in the closed environment. The LED mixed lighting showed a high color rendering index (CRI) all the time. During the day, the light simulated the daylight and increased the tunability of the circadian action factor (CAF) and correlated color temperature (CCT). At night, it maintained low CAF and CCT. Three subjects did irregular shift work in the closed environment for 38 days. Their plasma melatonin and daily activity were measured to assess the circadian rhythm. After 38 days, the subjects' peak melatonin times did not shift significantly (p = 0.676), while their peak melatonin concentrations increased apparently (p = 0.005). The start times of the least active 5-h period (L5) in one day fluctuated in a small range. The standard deviation (SD) was <15.11 min in most times. These results demonstrated that the subjects' rhythms maintained stable and were enhanced. The periods of circular cross-correlation between activity and CAF oscillated around 24 h (SD = 15.4 min), indicating the entrainment of light on the stable 24-h rhythm. It was concluded that the daylight-like LED lighting effectively entrained and enhanced the circadian rhythm in the closed environment.

Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels.

The three-dimensional thermal characteristics of micro-light-emitting diodes (µLEDs) on GaN and sapphire substrates were studied with forward-voltage methods, thermal transient measurements, and infrared thermal imaging. The µLEDs on the GaN substrate showed an approximately 10 °C lower junction temperature and smaller amplitude of the K factors than those on the sapphire substrate under the current injection level of 4 kA cm-2. The thermal transient measurement showed that the spreading thermal resistances of the mesa, the GaN epilayer, and the interface of the GaN/substrate were reduced significantly for µLEDs on the GaN substrate because of the high-quality GaN crystal and the homogeneous interfaces. The infrared thermal images showed lower total average junction temperatures and more uniform temperature distributions for the µLEDs on the GaN substrate, which were also simulated with APSYS software. The thermal transport mechanisms are discussed for the lateral and vertical directions in the µLEDs.

Study on the Coupling Mechanism of the Orthogonal Dipoles with Surface Plasmon in Green LED by Cathodoluminescence.

We analyzed the coupling behavior between the localized surface plasmon (LSP) and quantum wells (QWs) using cathodoluminescence (CL) in a green light-emitting diodes (LED) with Ag nanoparticles (NPs) filled in photonic crystal (PhC) holes. Photoluminescence (PL) suppression and CL enhancement were obtained for the same green LED sample with the Ag NP array. Time-resolved PL (TRPL) results indicate strong coupling between the LSP and the QWs. Three-dimensional (3D) finite difference time domain (FDTD) simulation was performed using a three-body model consisting of two orthogonal dipoles and a single Ag NP. The LSP–QWs coupling effect was separated from the electron-beam (e-beam)–LSP–QW system by linear approximation. The energy dissipation was significantly reduced by the z-dipole introduction under the e-beam excitation. In this paper, the coupling mechanism is discussed and a novel emission structure is proposed.

Investigation on strain relaxation distribution in GaN-based µLEDs by Kelvin probe force microscopy and micro-photoluminescence.

GaN/InGaN multi-quantum-wells (MQWs) micron light emitting diodes (µLEDs) with the size ranging from 10 to 300 µm are fabricated. Effects of strain relaxation on the performance of µLEDs have been investigated both experimentally and numerically. Kelvin probe force microscopy (KPFM) and micro-photoluminescence (µPL) are used to characterize the strained area on micron pillars. Strain relaxation and reducing polarization field in MQWs almost affects the whole mesa for 10 µm LEDs and about 4% area around the lateral for 300 µm LEDs. It makes a great contribution to high performance for smaller size µLEDs. Moreover, an indirect nanoscale strain measurement for µLEDs are provided.

Effect of dipole polarization orientation on surface plasmon coupling with green emitting quantum wells by cathodoluminescence.

Ag nanoparticles (NPs) are fabricated on the cross-section of green emitting quantum wells (QWs). The effect of the dipole polarization orientation on the localized surface plasmon (LSP)-QW coupling can be studied by setting the incident direction of the electron beam parallel to the plane of the QWs. Cathodoluminescence (CL) measurements on the QWs show that the intensity with the Ag NPs is enhanced 6.1 times compared with that without the Ag NPs. Total energy loss profiles for an electron beam in the GaN and Ag NP are accurately simulated using a Monte Carlo program (CASINO). The orientations of the in-plane dipoles in the QWs can vary from 0° to 360°. Through a two-step simulation process using the three-dimensional (3D) finite difference time domain (FDTD) method, the weighted average of CL intensities are simulated for QWs with the Ag NPs. The simulation results agree well with the experimental results. Lastly, the dipole orientation dependent LSP-QW coupling process is discussed.