Influence of carbon ionization increment by adding ne on the bonding, electrical, and tribological properties of carbon thin films deposited by HiPIMS.

In this work, we use mass quadrupole spectroscopy to analyze the ion energy distribution function for C+ ions from different gas composition discharges (20, 40, 60, 80, and 90% Ne) + Ar in a plasma sputtering process. Carbon films were obtained for each gas composition discharge. The carbon bonding structure of films was analyzed by Raman spectroscopy using deconvolution fitting of the G and D Raman peaks. The C-sp3 content was correlated with the electrical and tribological properties of the carbon films. Our results further corroborate the enhancement of carbon ionization in HiPIMS processes by adding neon in conventional argon gas during the deposition process. Furthermore, we found that excessive levels of carbon ionization were detrimental in the formation of C-sp3 decreasing the resistivity, and indicating the decrement of the elastic modulus of the samples. In addition, the use of neon in the gas working mixture increased the deposition rate significantly compared to argon-only processes from 1.7 to 3.22 nm/min for the highest deposition rate cases. Tribology showed that an intermediate C-sp3 content in the carbon films developed desirable tribological behaviors with lower friction coefficients and wear rates, revealing that higher values of C-sp3 content are not necessarily for robust solid lubricious and wear resistance.

Energy-Resolving Time-of-Flight Mass Spectrometry for Bulk Plasma Analysis.

This work presents a newly designed energy-resolving time-of-flight mass spectrometer (E-TOFMS) for analysing the energy and mass of ions in bulk plasma. The system comprises an electrostatic sector analyser (ESA) for energy-to-charge (E/Q) ratio resolution and an orthogonal reflectron TOFMS for mass-to-charge (m/Q) ratio analysis. The design choices are explained, providing insight into electron and ion path simulations. The instrument was characterised using various ion generation sources, including an electron impact ion source, high power impulse magnetron sputtering, and microwave plasma electron cyclotron resonance sources. To validate its functionality, the energy-resolving data was compared with data obtained under the same conditions using a Langmuir probe and a retarding field energy analyser (RFEA). The benefits of the proposed E-TOFMS were demonstrated by sputtering highly alloyed steel with multiple isotope-rich elements, such as Mo or W. This technique offers an E/Q ratio resolution of up to 0.15 V for a range up to 125 V and a m/Q ratio resolution of at least 700 Th for a range up to 250 Th, with a temporal resolution of 10 µs.

Flexible and Disposable Hafnium Nitride Extended Gates Fabricated by Low-Temperature High-Power Impulse Magnetron Sputtering.

To obtain a high-performance extended gate field-effect transistor for pH detection, hafnium nitride (HfN) was first fabricated on an indium tin oxide on polyethylene terephthalate (ITO/PET) substrate using a high-power impulse magnetron sputter system (HiPIMS) in this study. It can be easily applied in biomedical diagnostic and environmental monitoring applications with the advantages of flexible, disposable, cost-effective, and reliable components. Various duty cycle conditions in HiPIMSs were designed to investigate the corresponding sensing performance and material properties including surface morphology and composition. As the duty cycle increased, the grain size of HfN increased. Additionally, X-ray photoelectron spectroscopy (XPS) analysis illustrated the presence of HfOxNy on the deposited HfN surface. Both behaviors could result in a better pH sensing performance based on the theory of the site-binding model. Subsequently, HfN with a 15% duty cycle exhibited excellent pH sensitivity and linearity, with values of 59.3 mV/pH and 99.8%, respectively; its hysteresis width and drift coefficient were -1 mV and 0.5 mV/h, respectively. Furthermore, this pH-sensing performance remained stable even after 2000 repeated bending cycles. These results indicate the potential and feasibility of this HiPIMS-deposited HfN for future wearable chemical applications.

Effects of HiPIMS Duty Cycle on Plasma Discharge and the Properties of Cu Film.

In this paper, Cu thin films were deposited on Si (100) substrates by the high-power impulse magnetron sputtering (HiIPMS) technique, and the effects of different duty cycles (from 2.25% to 5.25%) on the plasma discharge characteristics, microstructure, and electrical properties of Cu thin films were investigated. The results of the target current test show that the peak target current remains stable under 2.25% and 3% duty cycle conditions. Under the conditions of a 4.5% and 5.25% duty cycle, the target peak current shows a decreasing trend. The average power of the target shows a rising trend with the increase in the duty cycle, while the peak power of the target shows a decreasing trend with the increase in the duty cycle. The results of OES show that with the increase in the duty cycle, the total peak intensity of copper and argon emissions shows an overall increasing trend. The duty cycle from 3% to 4.5% change in copper and argon emission peak total intensity change is not obvious. The deposition rate and surface morphology of the copper film were investigated by scanning electron microscopy, and the deposition rate of the copper film increased with the increase in the duty cycle, which was mainly due to the increase in the average power. The surface roughness of the copper film was evaluated by atomic force microscopy. X-ray diffraction (XRD) was used to analyze the grain size and texture of the Cu film, and the results showed that the average grain size of the Cu film increased from 38 nm to 59 nm on the (111) and (200) crystal planes. Four-probe square resistance test copper film resistivity in 2.25%, 3% low duty cycle conditions of the copper film resistivity is generally higher than 4.5%, 5.25% high duty cycle conditions, the copper film resistivity shows the trend of change is mainly affected by the copper film grain size and the (111) face of the double effect of the optimal orientation. The lowest resistivity of the copper film measured under the 4.5% duty cycle condition is 1.7005 µΩ·cm, which is close to the intrinsic resistivity of the copper film of 1.67 µΩ·cm.

Influence of HiPIMS Pulse Widths on the Structure and Properties of Copper Films.

High-power pulse magnetron sputtering is a new type of magnetron sputtering technology that has advantages such as high peak power density and a high ionization rate compared to DC magnetron sputtering. In this paper, we report the effects of different pulse widths on the current waveform and plasma spectrum of target material sputtering, as well as the structure and properties of Cu films prepared under the same sputtering voltage and duty cycle. Extending the pulse width can make the sputtering enter the self-sputtering (SS) stage and improve the ion quantity of sputtered particles. The Cu film prepared by HiPIMS with long pulse width has higher bond strength and lower electrical resistivity compared to the Cu film prepared by short pulse width. In terms of microstructure, the Cu film prepared by HiPIMS with the long pulse width has a larger grain size and lower micro-surface roughness. When the pulse width is bigger than 200 µs, the microstructure of the Cu film changes from granular to branched. This transformation reduces the interface on the Cu film, further reducing the resistivity of the Cu film. Compared to short pulses, long pulse width HiPIMS can obtain higher quality Cu films. This result provides a new process approach for preparing high-quality Cu films using HiPIMS technology.

The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process.

It is usually difficult to realize high mobility together with a low threshold voltage and good stability for amorphous oxide thin-film transistors (TFTs). In addition, a low fabrication temperature is preferred in terms of enhancing compatibility with the back end of line of the device. In this study, α-IGZO TFTs were prepared by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The channel was prepared under a two-step deposition pressure process to modulate its electrical properties. X-ray photoelectron spectra revealed that the front-channel has a lower Ga content and a higher oxygen vacancy concentration than the back-channel. This process has the advantage of balancing high mobility and a low threshold voltage of the TFT when compared with a conventional homogeneous channel. It also has a simpler fabrication process than that of a dual active layer comprising heterogeneous materials. The HiPIMS process has the advantage of being a low temperature process for oxide TFTs.

Investigations on the Surface Integrity and Wear Mechanisms of TiAlYN-Coated Tools in Inconel 718 Milling Operations.

Inconel 718 is a Ni superalloy with superior mechanical properties, even at high temperatures. However, due to its high hardness and low thermal conductivity, it is considered a difficult-to-machine material. This material is widely used in applications that require good dimensional stability, making the milling process the most used in machining this alloy. The wear resulting from this process and the quality of the machined surface are still challenging factors when it comes to Inconel 718. TiAlN-based coating has been used on cutting tools with Yttrium as a doping element to improve the process performance. Based on this, this work evaluated the machined surface integrity and wear resistance of cutting tools coated using Physical Vapor Deposition (PVD) HiPIMS with TiAlYN in the end milling of Inconel 718, varying the process parameters such as cutting speed (vc), feed per tooth (fz), and cutting length (Lcut). It was verified that the Lcut is the parameter that exerts the most significant influence since, even at small distances, Inconel 718 already generates high tool wear (TW). Furthermore, the main wear mechanisms were abrasive and adhesive wear, with the development of a built-up edge (BUE) under a125 m/min feed rate (f) and a Lcut = 15 m. Chipping, cracking, and delamination of the coating were also observed, indicating a lack of adhesion between the coating and the substrate, suggesting the need for a good interlayer or the adjustment of the PVD parameters.

The Deposition and Properties of Titanium Films Prepared by High Power Pulsed Magnetron Sputtering.

Titanium thin films are particularly important as electrode layers, barrier layers, or intermediate buffer layers in the semiconductor industry. In order to improve the quality of Ti thin films and the adhesion and diffraction abilities of irregular parts, this paper used high-power pulsed magnetron sputtering (HPPMS/HiPIMS) to prepare titanium thin films. The effects of different trigger voltages (700 V, 800 V, and 900 V) on plasma properties were studied, and the microstructure, mechanical properties and corrosion resistance of the films were also studied. The results showed that as the voltage increased, the grain size of the thin films gradually increased. The residual stress of the titanium films changed from compressive stress (-333 MPa) to tensile stress (55 MPa) and then to low compressive stress (-178 MPa). The hardness values were 13 GPa, 9.45 GPa and 6.62 GPa, respectively. The wear resistance of the films gradually decreased, while the toughness gradually increased. The corrosion resistance of the films decreased as well.

Photocatalytic Activity of N-Doped ZrO2 Thin Films Determined by Direct and Indirect Irradiation.

In this paper, we investigate the decomposition of a toxic organic compound, Rhodamine B, by the photocatalytic activities of undoped and nitrogen-doped ZrO2 thin films, deposited using the HiPIMS technique. The investigation was performed in the presence and in the absence of H2O2, for two types of experimental arrangements: the irradiation of the films, followed by dipping them in the Rhodamine B solutions, and the irradiation of the films dipped in the solution. The two situations were named "direct irradiation" and "indirect irradiation", respectively. Methods like XRD, AFM, XPS, DRS, water/film surface contact angle, and spectrophotometry were used to obtain information on the films' structure, surface morphology, elemental composition of the films surface, optical band gap, hydrophilicity, and photocatalytic activity, respectively. All these properties were described and correlated. By N-doping ZrO2, the films become absorbent in the visible domain, so that the solar light could be efficiently used; the films' hydrophilic properties improve, which is an important fact in self-cleaning applications; and the films' photocatalytic activity for the decomposition of Rhodamine B becomes better. The addition of hydrogen peroxide acted as an inhibitor for all systems and not as an accelerator of the photocatalytic reactions as expected.

Band-gap engineering of zirconia by nitrogen doping in reactive HiPIMS: a step forward in developing innovative technologies for photocatalysts synthesis.

In the global context of climate change and carbon neutrality, this work proposes a strategy to improve the light absorption of photocatalytic water-splitting materials into the visible spectrum by anion doping. In this framework, reactive high power impulse magnetron sputtering (HiPIMS) of a pure Zr target in Ar/N2/O2 gas mixture was used for the deposition of crystalline zirconium oxynitride (ZrO2-xNx) thin films with variable nitrogen doping concentration and energy band-gap. The nitrogen content into these films was controlled by the discharge pulsing frequency, which controls the target surface poisoning and peak discharge current. The role of the nitrogen doping on the optical, structural, and photocatalytic properties of ZrO2-xNx films was investigated. UV-Vis-NIR spectroscopy was employed to investigate the optical properties and to assess the energy band-gap. Surface chemical analysis was performed using X-ray photoelectron spectroscopy, while structural analysis was carried out by X-ray diffraction. The increase in the pulse repetition frequency determined a build-up in the nitrogen content of the deposited ZrO2-xNx thin films from ∼10 to ∼25 at.%. This leads to a narrowing of the optical band-gap energy from 3.43 to 2.20 eV and endorses efficient absorption of visible light. Owing to its narrow bandgap, ZrO2-xNx thin films obtained by reactive HiPIMS can be used as visible light-driven photocatalyst. For the selected processing conditions (pulsing configuration and gas composition), it was found that reactive HiPIMS can suppress the hysteresis effect for a wide range of frequencies, leading to a stable deposition process with a smooth transition from compound to metal-sputtering mode.

Highly Stable and Enhanced Performance of p-i-n Perovskite Solar Cells via Cuprous Oxide Hole-Transport Layers.

Solar light is a renewable source of energy that can be used and transformed into electricity using clean energy technology. In this study, we used direct current magnetron sputtering (DCMS) to sputter p-type cuprous oxide (Cu2O) films with different oxygen flow rates (fO2) as hole-transport layers (HTLs) for perovskite solar cells (PSCs). The PSC device with the structure of ITO/Cu2O/perovskite/[6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)/bathocuproine (BCP)/Ag showed a power conversion efficiency (PCE) of 7.91%. Subsequently, a high-power impulse magnetron sputtering (HiPIMS) Cu2O film was embedded and promoted the device performance to 10.29%. As HiPIMS has a high ionization rate, it can create higher density films with low surface roughness, which passivates surface/interface defects and reduces the leakage current of PSCs. We further applied the superimposed high-power impulse magnetron sputtering (superimposed HiPIMS) derived Cu2O as the HTL, and we observed PCEs of 15.20% under one sun (AM1.5G, 1000 Wm-2) and 25.09% under indoor illumination (TL-84, 1000 lux). In addition, this PSC device outperformed by demonstrating remarkable long-term stability via retaining 97.6% (dark, Ar) of its performance for over 2000 h.

Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfOxNy) Thin Films.

This work demonstrated the optimization of HiPIMS reactive magnetron sputtering of hafnium oxynitride (HfOxNy) thin films. During the optimization procedure, employing Taguchi orthogonal tables, the parameters of examined dielectric films were explored, utilizing optical methods (spectroscopic ellipsometry and refractometry), electrical characterization (C-V, I-V measurements of MOS structures), and structural investigation (AFM, XRD, XPS). The thermal stability of fabricated HfOxNy layers, up to 800 °C, was also investigated. The presented results demonstrated the correctness of the optimization methodology. The results also demonstrated the significant stability of hafnia-based layers at up to 800 °C. No electrical parameters or surface morphology deteriorations were demonstrated. The structural analysis revealed comparable electrical properties and significantly greater immunity to high-temperature treatment in HfOxNy layers formed using HiPIMS, as compared to those formed using the standard pulsed magnetron sputtering technique. The results presented in this study confirmed that the investigated hafnium oxynitride films, fabricated through the HiPIMS process, could potentially be used as a thermally-stable gate dielectric in self-aligned MOS structures and devices.

Properties of TiAlN Coatings Obtained by Dual-HiPIMS with Short Pulses.

The paper focuses on the dual high-power impulse magnetron sputtering of TiAlN coatings using short pulses of high power delivered to the target. The surface morphology, elemental composition, phase composition, hardness, wear resistance, and adhesive strength of TiAlN coatings with different Al contents were investigated on WC-Co substrates. The heat resistance of the TiAlN coating was determined with synchrotron X-ray diffraction. The hardness of the TiAlN coating with a low Al content ranged from 17 to 30 GPa, and its wear rate varied between 1.8∙10-6 and 4.9∙10-6 mm3·N-1·m-1 depending on the substrate bias voltage. The HF1-HF2 adhesion strength of the TiAlN coatings was evaluated with the Daimler-Benz Rockwell C test. The hardness and wear rate of the Ti0.61Al0.39N coating were 26.5 GPa and 5.2∙10-6 mm3·N-1·m-1, respectively. The annealing process at 700 °C considerably worsened the mechanical properties of the Ti0.94Al0.06N coating, in contrast to the Ti0.61Al0.39N coating, which manifested a high oxidation resistance at annealing temperatures of 940-950 °C.

Mechanical and Thermal Properties of W-Ta-B Coatings Deposited by High-Power Impulse Magnetron Sputtering (HiPIMS).

We present the deposition and characterization of tungsten-tantalum diboride (W,Ta)B2 coatings prepared by the high-power impulse magnetron sputtering technique. We evaluated the influence of pulse duration and substrate bias on the properties of (W,Ta)B2 films. A high hardness of up to 35 GPa measured by nanoindentation was simultaneously obtained with good elastic properties. Changing the pulse duration greatly affected the B/(W+Ta) atomic ratio, which influenced the properties of the coatings. The deposited films are thermally stable at up to 1000 °C in vacuum and are able to withstand oxidation at 500 °C.

(Cr1-xAlx)N Coating Deposition by Short-Pulse High-Power Dual Magnetron Sputtering.

The paper deals with the (Cr1-xAlx)N coating containing 17 to 54 % Al which is deposited on AISI 430 stainless steel stationary substrates by short-pulse high-power dual magnetron sputtering of Al and Cr targets. The Al/Cr ratio in the coating depends on the substrate position relative to magnetrons. It is shown that the higher Al content in the (Cr1-xAlx)N coating improves its hardness from 17 to 28 GPa. Regardless of the Al content, the (Cr1-xAlx)N coating manifests a low wear rate, namely (4.1-7.8) × 10-9 and (3.9-5.3) × 10-7 mm3N-1m-1 in using metallic (100Cr6) and ceramic (Al2O3) counter bodies, respectively. In addition, this coating possesses the friction coefficient 0.4-0.7 and adhesive strength quality HF1 and HF2 indicating good interfacial adhesion according to the Daimler-Benz Rockwell-C adhesion test.

Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering.

High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest by offering significant advantages such as high target ionization rate, high plasma density, and the smooth surface of the sputtered films. This study discusses the deposition of copper nitride thin films via HiPIMS at different deposition pressures and then examines the impact of the deposition pressure on the structural and electrical properties of Cu3N films. At low deposition pressure, Cu-rich Cu3N films were obtained, which results in the n-type semiconductor behavior of the films. When the deposition pressure is increased to above 15 mtorr, Cu3N phase forms, leading to a change in the conductivity type of the film from n-type to p-type. According to our analysis, the Cu3N film deposited at 15 mtorr shows p-type conduction with the lowest resistivity of 0.024 Ω·cm and the highest carrier concentration of 1.43 × 1020 cm-3. Furthermore, compared to the properties of Cu3N films deposited via conventional direct current magnetron sputtering (DCMS), the films deposited via HiPIMS show better conductivity due to the higher ionization rate of HiPIMS. These results enhance the potential of Cu3N films' use in smart futuristic devices such as photodetection, photovoltaic absorbers, lithium-ion batteries, etc.

Role of Nitrogen and Yttrium Contents in Manufacturing (Cr, Y)Nx Film Nanostructures.

The high-power impulse magnetron sputtering (HiPIMS) technique was applied to deposit multilayer-like (Cr, Y)Nx coatings on AISI 304L stainless steel, using pendular substrate oscillation and a Cr-Y target and varying the nitrogen flow rate from 10 to 50 sccm. The microstructure, mechanical and tribological properties were investigated by scanning and transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, instrumented nano-hardness, and wear tests. The columnar grain structure became highly segmented and nanosized due to pendular substrate oscillation and the addition of yttrium. The deposition rate increased continuously with the growing nitrogen flow rate. The increase in nitrogen flow from 10 to 50 sccm increased the hardness of the coatings (Cr, Y)Nx, with a maximum hardness value of 32.7 GPa for the coating (Cr, Y)Nx with a nitrogen flow of 50 sccm, which greatly surpasses the hardness of CrN films with multilayer-like (Cr, Y)Nx coatings architecture. The best mechanical and tribological performance was achieved for a nitrogen flow rate of 50 sccm. This was enabled by more elevated compressive stresses and impact energies of the impinging ions during film growth, owing to an increase of HiPIMS peak voltage with a rising N2/Ar ratio.

Tailoring the Hybrid Magnetron Sputtering Process (HiPIMS and dcMS) to Manufacture Ceramic Multilayers: Powering Conditions, Target Materials, and Base Layers.

The mechanical and wear behavior of CrN/CrAlN multilayers were improved by tailoring the experimental conditions of a hybrid magnetron sputtering process based on a high-power impulse (HiPIMS) and two direct current magnetron sputtering (dcMS) power supplies. To this end, the influence of the base layer and of the combination of Cr and CrAl targets, which were switched to the dcMS and HiPIMS power supplies in different configurations, were investigated with respect to the growth of ceramic CrN/CrAlN multilayers onto commercial gas-nitrided diesel piston rings. The microstructure, grain morphology, and mechanical properties were evaluated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and instrumented nanoindentation. Bench wear tests simulating the operation of a combustion engine were conducted against a gray cast iron cylinder liner under reciprocating conditions using 0W20 oil as a lubricating agent enriched with Al2O3 particles. The results revealed a significant increase in hardness, resistance to plastic strain, and wear resistance when two CrAl targets were switched to a HiPIMS and a dcMS power supply, and a Cr target was powered by another dcMS power supply. The compressive coating stresses were slightly reduced due to the soft Cr base layer that enabled stress relief within the multilayer. The proposed concept of hybrid magnetron sputtering outperformed the commercial PVD coatings of CrN for diesel piston rings manufactured by cathodic arc evaporation.

Role of Ambient Hydrogen in HiPIMS-ITO Film during Annealing Process in a Large Temperature Range.

Indium tin oxide (ITO) thin films were prepared by high power impulse magnetron sputtering (HiPIMS) and annealed in hydrogen-containing forming gas to reduce the film resistivity. The film resistivity reduces by nearly an order of magnitude from 5.6 × 10-3 Ω·cm for the as-deposited film to the lowest value of 6.7 × 10-4 Ω·cm after annealed at 700 °C for 40 min. The role of hydrogen (H) in changing the film properties was explored and discussed in a large temperature range (300-800 °C). When annealed at a low temperature of 300-500 °C, the incorporated H atoms occupied the oxygen sites (Ho), acting as shallow donors that contribute to the increase of carrier concentration, leading to the decrease of film resistivity. When annealed at an intermediate temperature of 500-700 °C, the Ho defects are thermally unstable and decay upon annealing, leading to the reduction of carrier concentration. However, the film resistivity keeps decreasing due to the increase in carrier mobility. Meanwhile, some locally distributed metallic clusters formed due to the reduction effect of H2. When annealed at a high temperature of 700-800 °C, the metal oxide film is severely reduced and transforms to gaseous metal hydride, leading to the dramatic reduction of film thickness and carrier mobility at 750 °C and vanish of the film at 800 °C.

Nanoarchitectonics for Ultrathin Gold Films Deposited on Collagen Fabric by High-Power Impulse Magnetron Sputtering.

Gold nanoparticles conjugated with collagen molecules and fibers have been proven to improve structure strength, water and enzyme degradation resistance, cell attachment, cell proliferation, and skin wound healing. In this study, high-power impulse magnetron sputtering (HiPIMS) was used to deposit ultrathin gold films (UTGF) and discontinuous island structures on type I collagen substrates. A long turn-off time of duty cycle and low chamber temperature of HiPIMS maintained substrate morphology. Increasing the deposition time from 6 s to 30 s elevated the substrate surface coverage by UTGF up to 91.79%, as observed by a field emission scanning electron microscope. X-ray diffractometry analysis revealed signature low and wide peaks for Au (111). The important surface functional groups and signature peaks of collagen substrate remained unchanged according to Fourier transform infrared spectroscopy results. Multi-peak curve fitting of the Amide I spectrum revealed the non-changed protein secondary structure of type I collagen, which mainly consists of α-helix. Atomic force microscopy observation showed that the roughness average value shifted from 1.74 to 4.17 nm by increasing the deposition time from 13 s to 77 s. The uneven surface of collagen substrate made quantification of thin film thickness by AFM difficult. Instead, UTGF thickness was measured using simultaneously deposited glass specimens placed in an HiPIMS chamber with collagen substrates. Film thickness was 3.99 and 10.37 nm at deposition times of 13 and 77 s, respectively. X-ray photoelectron spectroscopy showed preserved substrate elements on the surface. Surface water contact angle measurement revealed the same temporary hydrophobic behavior before water absorption via exposed collagen substrates, regardless of deposition time. In conclusion, HiPIMS is an effective method to deposit UTGF on biomedical materials such as collagen without damaging valuable substrates. The composition of two materials could be further used for biomedical purposes with preserved functions of UTGF and collagen.