Visible-Photo-Assisted Phase Switching of Antiferroelectric-to-Ferroelectric Orders in an I3--Intercalated 2D Perovskite.

Antiferroelectric (AFE) has emerged as a promising branch of electroactive materials, due to their intriguing physical attributes stemming from the electric field-induced antipolar-to-polar phase transformation. However, the requirement of an extremely high electric field strength to switch adjacent sublattice polarization poses great challenges for exploiting molecular AFE system. Although photoirradiation is striking as a noncontact and nondestructive manipulation tool to optimize physical properties, the optical control of antiferroelectricity is still unexplored. Here, by adopting light-sensitive triiodide I3- anion into the 2D perovskite family, we have designed the first I3--intercalated molecular AFE of (t-ACH)2EA2Pb3I10(I3)0.5·((H3O)(H2O))0.5 (1, t-ACH = trans-4-aminomethyl-1-cyclohexanecarboxylate, EA = ethylammonium). The I3--intercalating gives an ultra-narrow bandgap of 1.65 eV with strong absorption. In terms of AFE structure, the anti-parallel alignment of electric dipoles results in a spontaneous polarization of 4.3 µC/cm2. Strikingly, 1 merely shows AFE behaviour in the dark even under ultrahigh voltage, while the field-induced ferroelectric state can be facilely obtained upon visible illumination. Such unprecedented photo-assisted phase switching ascribes to the incorporation of photoactive I3- anions, which reduce the AFE-to-ferroelectric switching barrier for 1. This pioneering work on the photo-assisting transformation of ferroic orders paves a new way to develop future photoactive materials with significant potential applications.

Antiferroelectric Heterostructures Memristors with Unique Resistive Switching Mechanisms and Properties.

A novel antiferroelectric material, PbSnO3 (PSO), was introduced into a resistive random access memory (RRAM) to reveal its resistive switching (RS) properties. It exhibits outstanding electrical performance with a large memory window (>104), narrow switching voltage distribution (±2 V), and low power consumption. Using high-resolution transmission electron microscopy, we observed the antiferroelectric properties and remanent polarization of the PSO thin films. The in-plane shear strains in the monoclinic PSO layer are attributed to oxygen octahedral tilts, resulting in misfit dislocations and grain boundaries at the PSO/SRO interface. Furthermore, the incoherent grain boundaries between the orthorhombic and monoclinic phases are assumed to be the primary paths of Ag+ filaments. Therefore, the RS behavior is primarily dominated by antiferroelectric polarization and defect mechanisms for the PSO structures. The RS behavior of antiferroelectric heterostructures controlled by switching spontaneous polarization and strain, defects, and surface chemistry reactions can facilitate the development of new antiferroelectric device systems.

Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing.

Functionally diverse devices with artificial neuron and synapse properties are critical for neuromorphic systems. We present a two-terminal artificial leaky-integrate-fire (LIF) neuron based on 6 nm Hf0.1Zr0.9O2 (HZO) antiferroelectric (AFE) thin films and develop a synaptic device through work function (WF) engineering. LIF neuron characteristics, including integration, firing, and leakage, are achieved in W/HZO/W devices due to the accumulated polarization and spontaneous depolarization of AFE HZO films. By engineering the top electrode with asymmetric WFs, we found that Au/Ti/HZO/W devices exhibit synaptic weight plasticity, such as paired-pulse facilitation and long-term potentiation/depression, achieving >90% accuracy in digit recognition within constructed artificial neural network systems. These findings suggest that AFE HZO capacitor-based neurons and WF-engineered artificial synapses hold promise for constructing efficient spiking neuron networks and artificial neural networks, thereby advancing neuromorphic computing applications based on emerging AFE HZO devices.

Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric.

Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies show that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, the discovery of antiferroelectric domain walls in the uniaxial ferroelectric Pb5Ge3O11 is reported. Highly mobile domain walls with an alternating displacement of Pb atoms are resolved, resulting in a cyclic 180° flip of dipole direction within the wall. Density functional theory calculations show that Pb5Ge3O11 is hyperferroelectric, allowing the system to overcome the depolarization fields that usually suppress the antiparallel ordering of dipoles along the longitudinal direction. Interestingly, the antiferroelectric walls observed under the electron beam are energetically more costly than basic head-to-head or tail-to-tail walls. The results suggest a new type of excited domain-wall state, expanding previous studies on ferroelectric domain walls into the realm of antiferroic phenomena.

Survey of Applicable Methods for Determining Viscoelastic Effects in Ferroelectric and Antiferroelectric Chiral Liquid Crystals.

Viscosity, elasticity, and viscoelastic properties are one of the most fundamental properties of liquid crystalline materials; the main problem in determining these properties is the multitude of physical parameters needed to determine the values of elasticity and viscosity constants. In this paper, a number of different measurement methods for the complete characterization of viscoelastic properties for smectic liquid crystalline materials and their mixtures are analyzed, both theoretically and experimentally. The way in which viscoelastic material constants are determined depends mainly on the application/purpose of the materials under study. The subject of this work was to review the methods used to determine viscoelastic effects in ferroelectric and antiferroelectric chiral liquid crystals, their mixtures, composite materials, and even in dielectric systems, which would bear the hallmark of a universal method allowing the application of sufficiently low electric fields. In the case of chiral liquid crystals with ferroelectric and antiferroelectric phases and their subphases, the following assumption applies: fulfilment of Hooke's law (in the case of elastic coefficients) and preservation of laminar flow (in the case of viscosity coefficients).

Dielectric Modes in Antiferroelectric and Ferroelectric Liquid Crystals in a Pure Enantiomeric Version and a Racemic Mixture.

The dielectric properties of synclinic (ferroelectric SmC*) and anticlinic (antiferroelectric SmCA*) smectic liquid crystals composed of molecules of one chiral version (S) are presented and compared with properties of racemic mixture (R, S), showing SmC and SmCA phases. The racemic mixture completely loses its ferroelectric and antiferroelectric properties. Surprisingly, only one dielectric mode observed in the antiferroelectric SmCA* phase disappeared in the dielectric response of the racemic SmCA phase. Additionally, we observed that in the SmC phase, seen in the racemic mixture, the weak dielectric mode (named the X mode) is detected, which seems to be the continuation of the PL mode existing in the racemic SmCA. Moreover, this mode in the racemic SmC has nothing to do with the Goldstone mode, typical for the SmC* phase. This paper describes in detail the real and imaginary parts of dielectric permittivity in smectic phases for the enantiomer and racemate with and without a DC field, compares the properties of the X and PL modes, and discusses the full scheme of dielectric modes in enantiomer and racemate.

Antiferroelectric Ceramics for Energy-Efficient Capacitors by Theory-Guided Discovery.

Antiferroelectric ceramics, via the electric-field-induced antiferroelectric (AFE)-ferroelectric (FE) phase transitions, show great promise for high-energy-density capacitors. Yet, currently, only 70-80% energy release is found during a charge-discharge cycle. Here, for PbZrO3-based oxides, geometric nonlinear theory of martensitic phase transitions is applied (first used to guide supercompatible shape-memory alloys) to predict the reversibility of the AFE-FE transition by using density-functional theory to assess AFE/FE interfacial lattice-mismatch strain that assures ultralow electric hysteresis and extended fatigue lifetime. A good correlation of mismatch strain with electric hysteresis, hence, with energy efficiency of AFE capacitors is observed. Guided by theory, high-throughput material search is conducted and AFE compositions with a near-perfect charge-discharge energy efficiency (98.2%), i.e., near-zero hysteresis are discovered. And the fatigue life of the capacitor reaches 79.5 million charge-discharge cycles, a factor of 80 enhancement over AFE ceramics with large electric hysteresis.

Unconventional Polarization Response in Titanite-Type Oxides due to Hashed Antiferroelectric Domains.

Domains in a crystal, which have crystallographic uniformity and are geometrically segmented, typically arise from various phase transitions. The physical properties within individual domains are inherently the same as those in the homogeneous bulk. As a result, sufficiently large domains have little influence on the bulk properties. However, as the domains decrease in size to the nanoscale, for instance, due to multiple phase instabilities or spatial inhomogeneities, then the materials often acquire exceptional functionalities that are unattainable without these domains. This effect is exemplified by the ultrahigh dielectric and piezoelectric responses observed in ferroelectric oxides with nanoscale polar domains as well as in ferroelectric relaxors with polar nanoclusters. Here, we demonstrate that hashed nanoscale domains in an antiferroelectric material are also capable of boosting dielectric permittivity in an unconventional way. This discovery has been made in an antiferroelectric titanite-type oxide, CaTi(Si1-xGex)O5, in which the permittivity significantly increases when the antiferroelectric order becomes short-range. Our transmission electron microscopy observations have clarified that polar regions simultaneously appear around antiphase boundaries in the antiferroelectric phase of CaTi(Si1-xGex)O5. As the concentration of the antiphase boundary increases, the polar regions become denser and play a crucial role in boosting the permittivity. At the composition of x = 0.5, the value of the permittivity finally reaches double that in the bulk and shows excellent linearity, at least until an electric field of 500 kV/cm is applied. The present findings highlight the promise of domain engineering for boosting the permittivity in antiferroelectrics as a way to develop materials with excellent dielectric properties.

Magnetic Phase Transition-Induced Modulation of Ferroelectric Properties in Hexagonal RFeO3 (R = Tb and Ho).

Hexagonal rare-earth iron oxides (h-RFeO3) exhibit spontaneous magnetization and room-temperature ferroelectricity simultaneously. However, achieving a large magnetoelectric coupling necessitates further exploration. Herein, we report the impact of the magnetic phase transition on the ferroelectric properties of epitaxial h-RFeO3 (R = Tb and Ho) films prepared by pulsed laser deposition. The metastable h-RFeO3 phase is successfully stabilized with high crystallinity and low leakage current due to the ITO buffer layer, making it possible to investigate the ferroelectric properties. The h-TbFeO3 film exhibits a magnetic-field-induced transition from antiferromagnetic (AFM) to weak ferromagnetic (wFM) phases below 30 K, while also exhibiting ferroelectricity at 300 K. The dielectric constants change with the magnetic phase transition, demonstrating hysteresis in the magnetocapacitance. In contrast, the h-HoFeO3 film exhibits antiferroelectric-like behavior and an AFM-wFM phase transition. Notably, the h-HoFeO3 film shows a rapid increase in the remnant polarization during the AFM-wFM phase transition accompanied by an increase in the ferroelectric component. Considering the strong connection between the antiferroelectric behavior in the h-RFeO3 system and the ferroelectric domain wall motion, this considerable modification of ferroelectric properties during the magnetic phase transition is probably due to the faster movement of the ferroelectric domain walls in the wFM phase induced by the clamping effect. Our findings indicate the effectiveness of magnetic phase transitions in enhancing the magnetoelectric coupling, particularly when utilizing domain wall clamping properties.

The Influence of the Molecular Structure of Compounds on Their Properties and the Occurrence of Chiral Smectic Phases.

We have designed new chiral smectic mesogens with the -CH2O group near the chiral center. We synthesized two unique rod-like compounds. We determined the mesomorphic properties of these mesogens and confirmed the phase identification using dielectric spectroscopy. Depending on the length of the oligomethylene spacer (i.e., the number of methylene groups) in the achiral part of the molecules, the studied materials show different phase sequences. Moreover, the temperature ranges of the observed smectic phases are different. It can be seen that as the length of the alkyl chain increases, the liquid crystalline material shows more mesophases. Additionally, its clearing (isotropization) temperature increases. The studied compounds are compared with the structurally similar smectogens previously synthesized. The helical pitch measurements were performed using the selective reflection method. These materials can be useful and effective as chiral components and dopants in smectic mixtures targeted for optoelectronics and photonics.

Ultrahigh Energy Storage Density and Efficiency in Orthorhombic PLZST Antiferroelectric Ceramics via Composition Regulation.

PbZrO3-based antiferroelectric (AFE) ceramic materials have emerged as potential candidates for the next generation of high-energy multilayer ceramic capacitors (MLCCs) because of their distinctive characteristics of double hysteresis loops. The energy storage efficiency of orthorhombic AFE ceramics with ultrahigh storage density is relatively low, which hinders their practical application. In this study, the low efficiency limit of PLZST-based orthorhombic ceramics was overcome by precisely adjusting the Sn4+ content in the (Pb0.95Ca0.02La0.02)(Zr0.99-xSnxTi0.01)O3 AFE ceramics. On one hand, the addition of Sn4+ disrupts the original long-range dipole and improves the rapid response of polarization reversal under the applied voltage. As a result, the difference in electric hysteresis under an electric field is reduced, leading to a significant improvement in energy storage efficiency. On the other hand, increasing the Sn4+ content suppresses the formation of oxygen vacancies, inhibiting grain growth and strengthening grain bonding. This results in ceramics with a high breakdown field strength. Ultimately, the resulting PLCZST ceramics reveal an expressively improved recoverable energy density of 10.2 J cm-3 together with a high energy efficiency of 91.4% under a high applied electric field of 560 kV cm-1. The present study demonstrates the tunability of performance in orthorhombic PLZST AFE ceramics, thereby introducing a ceramic material with exceptional energy storage capabilities for MLCC applications.

Renewing Halogen Substitution Strategy for the Rational Design of High-Curie Temperature Metal-Free Molecular Antiferroelectrics.

Metal-free molecular antiferroelectric (AFE) holds a promise for energy storage on account of its unique physical attributes. However, it is challenging to explore high-curie temperature (Tc) molecular AFEs, due to the lack of design strategies regarding the rise of phase transition energy barriers. By renewing the halogen substitution strategy, we have obtained a series of high-Tc molecular AFEs of the halogen-substituted phenethylammonium bromides (x-PEAB, x=H/F/Cl/Br), resembling the binary stator-rotator system. Strikingly, the p-site halogen substitution of PEA+ cationic rotators raises their phase transition energy barrier and greatly enhances Tc up to ~473 K for Br-PEAB, on par with the record-high Tc values for molecular AFEs. As a typical case, the member 4-fluorophenethylammonium bromide (F-PEAB) shows notable AFE properties, including high Tc (~374 K) and large electric polarization (~3.2 µC/cm2). Further, F-PEAB also exhibits a high energy storage efficiency (η) of 83.6 % even around Tc, catching up with other AFE oxides. This renewing halogen substitution strategy in the molecular AFE system provides an effective way to design high-Tc AFEs for energy storage devices.

Synergistically Optimizing Pressure-Driven Energy Conversion and Energy-Harvesting Application via Modulating an Antiferroelectric-to-Ferroelectric Overlap Zone in Antiferroelectric Ceramics.

Dielectric ceramics with ultrahigh polarization and energy density are the core components used in next-generation pulse power generators based on explosive energy conversion. However, the low polarization of ferroelectric materials and high depolarized pressure hinder their development toward miniaturization, light weight, and integration, while antiferroelectric materials possessing larger nonlinear saturated polarization and rich phase structure are neglected in pulse power energy conversion. Here, an effective strategy of constructing antiferroelectric-to-ferroelectric overlap zone is achieved in binary system (1 - x)(Pb,La)(Zr,Ti)O3-xBa(Al1/2Nb1/2)O3 antiferroelectric ceramics to realize an excellent polarization of 41 µC/cm2 and a large depolarization efficiency of >99% under 150 MPa as well as a record high energy harvesting density of 2.5 J/cm3 under 400 MPa. The excellent comprehensive energy conversion and energy harvesting performance is mainly attributed to the strategy of antiferroelectric-to-ferroelectric overlap zone and improved microdomain density, at which orthorhombic-to-rhombohedral structure evolution is confirmed by transmission electron microscopy, piezo-response force microscopy, and Raman spectrum, resulting in substantially enhanced remanent polarization compared to ferroelectric ceramics. Besides, excellent temperature stability (∼180 °C) and optimized depolarization pressure also support that this binary system is a candidate for energy conversion and energy harvesting application. This work demonstrates that antiferroelectric-to-ferroelectric overlap based on antiferroelectric materials is an excellent strategy to develop dielectric materials with excellent depolarized polarization and energy harvesting density for energy conversion and harvesting.

Antiferroelectric AgNbO3 @KH550 Doped PVDF/PMMA Composites with High Energy Storage Performance.

The residual polarization of antiferroelectric ceramics is very small, yet they possess high energy storage density and efficiency. Incorporating antiferroelectric ceramic particles into a polymer matrix is beneficial for improving the energy storage performance of composites. However, excessive amounts of ceramic particles can lead to aggregation within the polymer, resulting in defects and a significant reduction in composite film performance. In this study, the antiferroelectric AgNbO3 is selected as the filler and modified with silane coupling agent KH550. poly(vinylidene fluoride) (PVDF) and polymethyl methacrylate (PMMA) are blended as the matrix, and the energy storage performance of the composite is improved by adjusting the additional amount of PVDF. The structure, dielectric properties, and energy storage properties of the composites are systematically studied. The results show that hydrogen bonds are formed between PVDF and PMMA, and PVDF and PMMA are tightly bonded under the action of hydrogen bonds. The compatibility of PVDF with PMMA is optimal when the mass fraction of PVDF is 30 wt%. Moreover, with the synergistic effect of the antiferroelectric filler AgNbO3 , the breakdown strength of AgNbO3 /PVDF/PMMA composites reaches 430 kV mm-1 , and the energy storage density reaches 14.35 J cm-3 .

Optimized Electrocaloric Refrigeration in Lead-Free NaNbO3-Based Ceramics via AFE ↔ FE Phase Transition Modulation.

An outstanding challenge for eco-friendly ferroelectric (FE) refrigeration is to achieve a large adiabatic temperature change within a broad temperature range originating from the electrocaloric (EC) effect, which is expected to be realized in antiferroelectric (AFE) materials owing to the large entropy change during electric field and thermally induced phase transition. In this work, a large EC response over a wide response temperature range can be achieved slightly above room temperature via designing the phase transition of NaNbO3. An irreversible to reversible AFE-FE phase transition on heating induced by the introduction of CaZrO3 into NaNbO3 plays a key role in the optimized electrocaloric refrigeration. Accordingly, accompanying the local structure transformation corresponding to the B-site ions, the transition temperature between the square polarization-electric field (P-E) hysteresis loop (the irreversible AFE-FE phase transition induced by the electric field) and the repeatable double P-E hysteresis loop (the electric field induced reversible AFE-FE phase transition) was tailored to around room temperature, in favor of extending large entropy change to the wide temperature range. This work provides an efficient approach to designing lead-free EC materials with excellent EC performance, promoting the advancement of environmentally friendly solid-state cooling technology.

Magnetic, Antiferroelectric-like Behavior and Resistance Switching Properties in BiFeO3-CaMnO3 Polycrystalline Thin Films.

The effect of ferromagnetic CaMnO3 (CMO) addition to structural, magnetic, dielectric, and ferroelectric properties of BiFeO3 is presented. X-ray diffraction and Raman investigation allowed the identification of a single pseudocubic perovskite structure. The magnetic measurement showed that the prepared films exhibit a ferromagnetic behavior at a low temperature with both coercive field and remnant magnetization increased with increasing CMO content. However, a deterioration of magnetization was observed at room temperature. Ferroelectric study revealed an antiferroelectric-like behavior with a pinched P-E hysteresis loop for 5% CMO doping BFO, resulting in low remnant polarization and double hysteresis loops. Whereas, high remnant polarization and coercive field with a likely square hysteresis loop are obtained for 10% CMO addition. Furthermore, a bipolar resistive switching behavior with a threshold voltage of about 1.8 V is observed for high doped film that can be linked to the ferroelectric polarization switching.

Achieving Ultrahigh Energy Storage Performance for NaNbO3-Based Lead-Free Antiferroelectric Ceramics via the Coupling of the Stable Antiferroelectric R Phase and Nanodomain Engineering.

NaNbO3(NN)-based lead-free eco-friendly antiferroelectric (AFE) ceramics with an extremely high maximum polarization (Pm) are believed to be a promising alternative to traditional lead-based ceramics. Nevertheless, the high energy dissipation resulting from the large polarization hysteresis, which arises from the AFE-ferroelectric (FE) phase transition, poses a great challenge to the application of this promising ceramic. Herein, an excellent recoverable energy storage density (Wrec) was attained by intentionally designing a (0.86 - x) NaNbO3-0.14CaTiO3-xBiMg2/3Nb1/3O3 (NN-CT-xBMN) relaxor antiferroelectric ceramic, attributed to the synergistic effect of the stable AFE R phase and nanodomain engineering to overcome the bottleneck. The obtained results illustrate that the inclusion of BMN causes the transition from AFE microdomains to nanodomains and stabilizes the relaxor AFE orthorhombic R phase, which generates a highly stable polarization field response with low hysteresis and delays the AFE-FE phase transition, thus improving energy storage density. As a consequence, a high Wrec of 5.41 J cm-3 with an excellent conversion efficiency η of 86.7% was obtained in the NN-CT-0.08BMN ceramic. Moreover, the NN-CT-0.08BMN ceramic exhibits superior stability in temperature (25-150 °C), frequency (1-600 Hz), and fatigue behavior (10°-104 cycles) together with a large current density (CD = 810 A cm-2), ultrahigh power density (PD = 118 MW cm-3), and ultrafast discharge rate (t0.9 < 0.7 µs). This superior energy storage density, coupled with outstanding stability, suggests that the NN-CT-0.08BMN ceramic has the potential to be a promising candidate for pulsed power applications and power electronics.

Intrinsic Atomic-Scale Antiferroelectric VOF3 Nanowire with Ultrahigh-Energy Storage Properties.

Antiferroelectrics with antiparallel dipoles are receiving tremendous attention for their technological importance and fundamental interest. However, intrinsic one-dimensional (1D) materials harboring antiferroelectric ordering have rarely been reported despite the promise of novel paradigms for miniaturized and high-density electronics. Herein, based on first- and second-principles calculations, we demonstrate the VOF3 atomic wire, exfoliated from an experimentally synthesized yet underexplored 1D van der Waals (vdW) bulk, as a new 1D antiferroelectric material. The energetic, thermal, and dynamic stabilities of the nanowire are confirmed theoretically. Moreover, the temperature-dependent phase transitions and double-hysteresis polarization-field loops are computed for the VOF3 nanowire by constructing the second-principles model. According to the hysteresis loops, high energy densities and efficiencies can be obtained simultaneously at room temperature in the VOF3 nanowire under moderate applied fields. Our identified 1D atomic wire not only expands the family of antiferroelectricity but also holds potential for novel high-power energy storage nanodevices.

VecMap: A Python-based Graphic User Interface Tool for Atomic Displacement Mapping in Perovskite Structures.

VecMap, a python-based graphic user interface tool was developed to help analyzing the atomic displacements in perovskite ceramics. With an input of a high-resolution STEM image in which the A-site, B-site, and/or O columns clearly resolved, VecMap outputs the displacement vector maps of either A-site or B-site cations, as well as the oxygen vector map if O columns are visible, in a highly automated fashion. A "Coupled HAADF-ABF" function was specially designed for easy atom finding in ABF images, in case the A-site and B-site atoms are too close in atomic numbers to show enough contrast. VecMap greatly simplifies the analysis of atomic displacement in perovskite structures.

Outstanding Energy Storage Performance of NBT-Based Ceramics under Moderate Electric Field Achieved via Antiferroelectric Engineering.

Ultrahigh energy-storage performance of dielectric ceramic capacitors is generally achieved under high electric fields (HEFs). However, the HEFs strongly limit the miniaturization, integration, and lifetime of the dielectric energy-storage capacitors. Thus, it is necessary to develop new energy-storage materials with excellent energy-storage densities under moderate electric fields (MEFs). Herein, the antiferroelectric material Ag0.9Ca0.05NbO3 (ACN) was used to modify the relaxor ferroelectric material 0.6Na0.5Bi0.5TiO3-0.4Sr0.7Bi0.2TiO3 (NBT-SBT). The introduction of ACN results in high polarization strength, regulated composition of rhombohedral (R3c) and tetragonal (P4bm), nanodomains, and refined grain size. An outstanding recoverable energy density (Wrec = 4.6 J/cm3) and high efficiency (η = 82%) were realized under an MEF of 260 kV/cm in 4 mol % ACN-modified NBT-SBT ceramic. The first-principles calculation reveals that the interaction between Bi and O is the intrinsic mechanism of the increased polarization. A new parameter ΔP/Eb was proposed to be used as the figure of merit to measure the energy-storage performance under MEFs (∼200-300 kV/cm). This work paves a new way to explore energy-storage materials with excellent-performance MEFs.