Design of a 900 MHz Dual-Mode SWIPT for Low-Power IoT Devices.

This paper presents a duty cycle-based, dual-mode simultaneous wireless information and power transceiver (SWIPT) for Internet of Things (IoT) devices in which a sensor node monitors the received power and adaptively controls the single-tone or multitone communication mode. An adaptive power-splitting (PS) ratio control scheme distributes the received radio frequency (RF) energy between the energy harvesting (EH) path and the information decoding (ID) path. The proposed SWIPT enables the self-powering of an ID transceiver above 20 dBm input power, leading to a battery-free network. The optimized PS ratio of 0.44 enables it to provide sufficient harvested energy for self-powering and energy-neutral operation of the ID transceiver. The ID transceiver can demodulate the amplitude-shift keying (ASK) and the binary phase-shift keying (BPSK) signals. Moreover, for low-input power level, a peak-to-average power ratio (PAPR) scheme based on multitone is also proposed for demodulation of the information-carrying RF signals. Due to the limited power, information is transmitted in uplink by backscatter modulation instead of RF signaling. To validate our proposed SWIPT architecture, a SWIPT printed circuit board (PCB) was designed with a multitone SWIPT board at 900 MHz. The demodulation of multitone by PAPR was verified separately on the PCB. Results showed the measured sensitivity of the SWIPT to be -7 dBm, and the measured peak power efficiency of the RF energy harvester was 69% at 20 dBm input power level. The power consumption of the injection-locked oscillator (ILO)-based phase detection path was 13.6 mW, and it could be supplied from the EH path when the input power level was high. The ID path could demodulate 4-ASK- and BPSK-modulated signals at the same time, thus receiving 3 bits from the demodulation process. Maximum data rate of 4 Mbps was achieved in the measurement.

A Sigma-Delta ADC for Signal Conditioning IC of Automotive Piezo-Resistive Pressure Sensors with over 80 dB SNR.

This paper presents a second-order discrete-time Sigma-Delta (SD) Analog-to-Digital Converter (ADC) with over 80 dB Signal to Noise Ratio (SNR), which is applied in a signal conditioning IC for automotive piezo-resistive pressure sensors. To reduce the flicker noise of the structure, choppers are used in every stage of the high gain amplifiers. Besides, to reduce the required area and power, only the CIC filter structure is adopted as a decimation filter. This filter has a configurable structure that can be applied to different data rates and input signal bandwidths. The proposed ADC was fabricated and measured in a 0.18-µm CMOS process. Due to the application of only a CIC filter, the total active area of the SD-ADC and reference generator is 0.49 mm² where the area of the decimation filter is only 0.075 mm². For the input signal bandwidth of 1.22 kHz, it achieved over 80 dB SNR in a 2.5 MHz sampling frequency while consuming 646 µW power.

Design of a Low-Power, Small-Area AEC-Q100-Compliant SENT Transmitter in Signal Conditioning IC for Automotive Pressure and Temperature Complex Sensors in 180 Nm CMOS Technology.

In this paper, a low-power and small-area Single Edge Nibble Transmission (SENT) transmitter design is proposed for automotive pressure and temperature complex sensor applications. To reduce the cost and size of the hardware, the pressure and temperature information is processed with a single integrated circuit (IC) and transmitted at the same time to the electronic control unit (ECU) through SENT. Due to its digital nature, it is immune to noise, has reduced sensitivity to electromagnetic interference (EMI), and generates low EMI. It requires only one PAD for its connectivity with ECU, and thus reduces the pin requirements, simplifies the connectivity, and minimizes the printed circuit board (PCB) complexity. The design is fully synthesizable, and independent of technology. The finite state machine-based approach is employed for area efficient implementation, and to translate the proposed architecture into hardware. The IC is fabricated in 1P6M 180 nm CMOS process with an area of (116 µm × 116 µm) and 4.314 K gates. The current consumption is 50 µA from a 1.8 V supply with a total 90 µW power. For compliance with AEC-Q100 for automotive reliability, a reverse and over voltage protection circuit is also implemented with human body model (HBM) electro-static discharge (ESD) of +6 kV, reverse voltage of -16 V to 0 V, over voltage of 8.2 V to 16 V, and fabricated area of 330 µm × 680 µm. The extensive testing, measurement, and simulation results prove that the design is fully compliant with SAE J2716 standard.