Exploring the properties of Dy2O3-Y2O3 Co-activated telluro-borate glass: Structural, physical, optical, thermal, and mechanical properties.

The successful application of glass-based materials in a wide range of scientific fields depends on the associated physical, optical, thermal, and mechanical properties. This article investigate the structural, Physical, thermal, optical, and mechanical properties of Dy2O3, Y2O3 co-activated telluro-borate glass developed using the melt-quenching method. The glassy quality and the elements component of the specimens were observed using XRD and EDX analyses. The addition of Y2O3 rise the glass density from 2.956 to 3.303 g/cm3 the refractive index from 2.5 to 2.7. These changes are due to the increase in polarizability and non-bridging oxygen (NBO). The photoluminescence (PL) spectra revealed a broad peak at 550 nm and additional weak emission peaks at 573 and 664 nm, respectively. While the observed broader peak can be linked to the convolution of Bi3+ ions transitions corresponding to the non-centrosymmetric site respectively, the weak emission bands are due to 4F9/2 â†’ 6H13/2 and 4F9/2 â†’ 6H11/2 Dy3+ transitions. Hence, the low symmetrical features of both Bi3+ and Dy3+ ions were confirmed. The increase in the Vickers hardness of the glass from 536.7 to 1366.9 indicates the influence of Y2O3 addition on the mechanical properties of the glasses. The findings help to improve our understanding of the behaviour of the glass composition and its prospective applications in disciplines such as photonic, and laser optics.

Activation energies for the formation and evaporation of vacancy clusters in silicon.

The thermal evolution of vacancy-type defects in Czochralski (Cz-) and epitaxially grown (epi-) silicon has been investigated using variable-energy positron annihilation spectroscopy. Heating at 300-500 degrees C caused rapid migration of divacancies and clustering of the resulting defects with activation energies of 2.1(2) and 2.7(7) eV in epi- and Cz-Si. Clustering occurred more rapidly in Cz-Si, attributed to the seeding effect of impurities. Heating at 500-640 degrees C annealed the clusters with activation energies of 3.9(3) and 3.6(3) eV in epi- and Cz-Si, linked to the vacancy-cluster binding energy.