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1.
Opt Lett ; 41(11): 2537-40, 2016 Jun 01.
Artigo em Inglês | MEDLINE | ID: mdl-27244408

RESUMO

We present the first experimental demonstration of coherent perfect absorption (CPA) in an integrated device using a silicon racetrack resonator at telecommunication wavelengths. Absorption in the racetrack is achieved by Si+-ion-implantation, allowing for phase controllable amplitude modulation at the resonant wavelength. The device is measured to have an extinction of 24.5 dB and a quality-factor exceeding 3000. Our results will enable integrated CPA devices for data modulation and detection.

2.
Opt Express ; 22(9): 10710-5, 2014 May 05.
Artigo em Inglês | MEDLINE | ID: mdl-24921772

RESUMO

We have fabricated a waveguide integrated monolithic silicon infrared detector. The photodiode consists of a p-i-n junction across a silicon-on-insulator (SOI) rib waveguide. Absorption is due to surface-states at the silicon/air interface of the waveguide. A 2 mm long detector shows a response of 0.045 A/W (calculated as a function of coupled light) and is capable of operation at 10 Gb/s at a reverse bias voltage of 2 V.

3.
Opt Express ; 21(17): 19530-7, 2013 Aug 26.
Artigo em Inglês | MEDLINE | ID: mdl-24105500

RESUMO

We have fabricated monolithic silicon avalanche photodiodes capable of 10 Gbps operation at a wavelength of 1550 nm. The photodiodes are entirely CMOS process compatible and comprise a p-i-n junction integrated with a silicon-on-insulator (SOI) rib waveguide. Photo-generation is initiated via the presence of deep levels in the silicon bandgap, introduced by ion implantation and modified by subsequent annealing. The devices show a small signal 3 dB bandwidth of 2.0 GHz as well as an open eye pattern at 10 Gbps. A responsivity of 4.7 ± 0.5 A/W is measured for a 600 µm device at a reverse bias of 40 V.

4.
Opt Express ; 21(12): 14342-50, 2013 Jun 17.
Artigo em Inglês | MEDLINE | ID: mdl-23787622

RESUMO

A defect-enhanced silicon photodiode and heater are integrated with and used to thermally stabilize a microring modulator. These optoelectronic components are interfaced with external control circuitry to create a closed-looped feedback system for thermally stabilizing the microring modulator. The thermal stabilization system enables the microring modulator to provide error-free 5-Gb/s modulation while being subjected to thermal fluctuations that would normally render it inoperable.


Assuntos
Fotometria/instrumentação , Semicondutores , Ressonância de Plasmônio de Superfície/instrumentação , Telecomunicações/instrumentação , Desenho de Equipamento , Análise de Falha de Equipamento , Retroalimentação , Miniaturização , Integração de Sistemas , Temperatura
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