Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performance.

A systematic study of six phosphonic acid (PA) self-assembled monolayers (SAMs) with tailored molecular structures is performed to evaluate their effectiveness as dielectric modifying layers in organic field-effect transistors (OFETs) and determine the relationship between SAM structural order, surface homogeneity, and surface energy in dictating device performance. SAM structures and surface properties are examined by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, contact angle goniometry, and atomic force microscopy (AFM). Top-contact pentacene OFET devices are fabricated on SAM modified Si with a thermally grown oxide layer as a dielectric. For less ordered methyl- and phenyl-terminated alkyl ~(CH2)12 PA SAMs of varying surface energies, pentacene OFETs show high charge carrier mobilities up to 4.1 cm2 V-1 s-1. It is hypothesized that for these SAMs, mitigation of molecular scale roughness and subsequent control of surface homogeneity allow for large pentacene grain growth leading to high performance pentacene OFET devices. PA SAMs that contain bulky terminal groups or are highly crystalline in nature do not allow for a homogenous surface at a molecular level and result in charge carrier mobilities of 1.3 cm2 V-1 s-1 or less. For all molecules used in this study, no causal relationship between SAM surface energy and charge carrier mobility in pentacene FET devices is observed.

Solvent-dispersed benzothiadiazole-tetrathiafulvalene single-crystal nanowires and their application in field-effect transistors.

A new organic semiconductor (BT-TTF) based on molecular moieties of benzothiadiazole and tetrathiafulvalene was designed and synthesized, and its structure, molecular packing and charge-transporting properties were determined. Thermal properties, electrochemical behaviors, and optical absorption of this molecule were studied by using differential scanning calorimetry/thermal gravimetric analysis, cyclic voltammetry, and ultraviolet-visible spectroscopy, respectively. Its bulk and nanowire single crystals were prepared and characterized by X-ray crystallography, scanning electron microscopy, transmission electron microscopy, and field-effect transistors. It is found that short intermolecular S···S (3.41 Å), S···C (3.49 Å), and S···N (3.05 Å) contacts define the solid-state structure of BT-TTF single crystals which π-stack along the [100] with interplanar distances of 3.49 Å. Solvent-cast single-crystal nanowire transistors showed mobilities as large as 0.36 cm2/(V s) with current on/off ratios of 1×10(6). This study further illustrates the impact of molecular design and a demonstration of high-performance single-crystal nanowire transistors from the resulting semiconductor.

Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors.

Insulating and semiconducting molecular phosphonic acid (PA) self-assembled monolayers (SAMs) have been developed for applications in organic field-effect transistors (OFETs) for low-power, low-cost flexible electronics. Multifunctional SAMs on ultrathin metal oxides, such as hafnium oxide and aluminum oxide, are shown to enable (1) low-voltage (sub 2 V) OFETs through dielectric and interface engineering on rigid and plastic substrates, (2) simultaneous one-component modification of source-drain and dielectric surfaces in bottom-contact OFETs, and (3) SAM-FETs based on molecular monolayer semiconductors. The combination of excellent dielectric and interfacial properties results in high-performance OFETs with low-subthreshold slopes down to 75 mV dec(-1), high I(on)/I(off) ratios of 10(5)-10(7), contact resistance down to 700 Ω cm, charge carrier mobilities of 0.1-4.6 cm(2) V(-1) s(-1), and general applicability to solution-processed and vacuum-deposited n-type and p-type organic and polymer semiconductors.

Solid-State Densification of Spun-Cast Self-Assembled Monolayers for Use in Ultra-Thin Hybrid Dielectrics.

Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlOx (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7×10-8 A cm-2 and capacitance density of 0.62 µF cm-2 at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to 1.1 cm2 V-1 s-1.

Molecular friction dissipation and mode coupling in organic monolayers and polymer films.

The impact of thermally active molecular rotational and translational relaxation modes on the friction dissipation process involving smooth nano-asperity contacts has been studied by atomic force microscopy, using the widely known Eyring analysis and a recently introduced method, dubbed intrinsic friction analysis. Two distinctly different model systems, i.e., monolayers of octadecyl-phosphonic acid (ODPA) and thin films of poly(tert-butyl acrylate) (PtBA) were investigated regarding shear-rate critical dissipation phenomena originating from diverging mode coupling behaviors between the external shear perturbation and the internal molecular modes of relaxation. Rapidly (ODPA) versus slowly (PtBA) relaxing systems, in comparison to the sliding rate, revealed monotonous logarithmic and nonmonotonous spectral shear rate dependences, respectively. Shear coupled, enthalpic activation energies of 46 kJ∕mol for ODPA and of 35 and ∼65 kJ∕mol for PtBA (below and above the glass transition) were found that could be attributed to intrinsic modes of relaxations. Also, entropic energies involved in the cooperative backbone mobility of PtBA could be quantified, dwarfing the activation energy by more than a factor of five. This study provides (i) a material specific understanding of the molecular scale dissipation process in shear compliant substances, (ii) analyses of material intrinsic shear-rate mode coupling, shear coordination and energetics, (iii) a verification of Eyring's model applied to tribological systems toward material intrinsic specificity, and (iv) a valuable extension of the Eyring analysis for complex macromolecular systems that are slowly relaxing, and thus, exhibit shear-rate mode coupling.

Dielectric surface-controlled low-voltage organic transistors via n-alkyl phosphonic acid self-assembled monolayers on high-k metal oxide.

In this paper, we report on n-alkyl phosphonic acid (PA) self-assembled monolayer (SAM)/hafnium oxide (HfO(2)) hybrid dielectrics utilizing the advantages of SAMs for control over the dielectric/semiconductor interface with those of high-k metal oxides for low-voltage organic thin film transistors (OTFTs). By systematically varying the number of carbon atoms of the n-alkyl PA SAM from six to eighteen on HfO(2) with stable and low leakage current density, we observe how the structural nature of the SAM affects the thin-film crystal structure and morphology, and subsequent device performance of low-voltage pentacene based OTFTs. We find that two primary structural factors of the SAM play a critical role in optimizing the device electrical characteristics, namely, the order/disorder of the SAM and its physical thickness. High saturation-field-effect mobilities result at a balance between disordered SAMs to promote large pentacene grains and thick SAMs to aid in physically buffering the charge carriers in pentacene from the adverse effects of the underlying high-k oxide. Employing the appropriate n-alkyl PA SAM/HfO(2) hybrid dielectrics, pentacene-based OTFTs operate under -2.0 V with low hysteresis, on-off current ratios above 1 x 10(6), threshold voltages below -0.6 V, subthreshold slopes as low as 100 mV dec(-1), and field-effect mobilities as high as 1.8 cm(2) V(-1) s(-1).

Development of new conjugated polymers with donor-pi-bridge-acceptor side chains for high performance solar cells.

Two new conjugated polymers have been designed and synthesized for polymer solar cells. Both of them exhibit excellent photovoltaic properties with a power conversion efficiency as high as 4.74%. Different from the traditional linear donor-acceptor (D-A) type conjugated polymers, these newly designed polymers have a two-dimensional conjugated structure with their tunable acceptors located at the end of D-A side chains and connected with the donors on the main chain through an efficient pi-bridge. This approach provides great flexibility in fine-tuning the absorption spectra and energy levels of the resultant polymers for achieving high device performance.

Study on the formation of self-assembled monolayers on sol-gel processed hafnium oxide as dielectric layers.

High dielectric constant (k) metal oxides such as hafnium oxide (HfO2) have gained significant interest due to their applications in microelectronics. In order to study and control the surface properties of hafnium oxide, self-assembled monolayers (SAMs) of four different long aliphatic molecules with binding groups of phosphonic acid, carboxylic acid, and catechol were formed and characterized. Surface modification was performed to improve the interface between metal oxide and top deposited materials as well as to create suitable dielectric properties, that is, leakage current and capacitance densities, which are important in organic thin film transistors. Attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, contact angle goniometry, atomic force microscopy (AFM), and simple metal-HfO2-SAM-metal devices were used to characterize the surfaces before and after SAM modification on sol-gel processed hafnium oxide. The alkylphosphonic acid provided the best monolayer formation on sol-gel processed hafnium oxide to generate a well-packed, ultrathin dielectric exhibiting a low leakage current density of 2x10(-8) A/cm2 at an applied voltage of -2.0 V and high capacitance density of 0.55 microF/cm2 at 10 kHz. Dialkylcatechol showed similar characteristics and the potential for using the catechol SAMs to modify HfO2 surfaces. In addition, the integration of this alkylphosphonic acid SAM/hafnium oxide hybrid dielectric into pentacene-based thin film transistors yields low-voltage operation within 1.5 V and improved performance over bare hafnium oxide.