Assessing the impact of varied nitrogen dosages on the vegetative and reproductive parameters of 'Sweet Sensation' and 'Rubygem' strawberry in Morang, Nepal.

Between 2020 and 2021, an experimental investigation was conducted in Tropical conditions to assess the effects of varying levels of nitrogen fertilization (0 kgNha-1, 0.5 kgNha-1, 1 kgNha-1, 1.5 kgNha-1, and 2 kgNha-1) on the growth and yield parameters of two strawberry cultivars (Sweet Sensation and Rubygem) in a sandy loam soil. The results demonstrated that the application of nitrogen positively influenced both vegetative (such as plant height, leaf number per plant, canopy spread, and crown diameter) and reproductive (such as number of flowers and fruits per plant, fruit yield, and TSS content) traits of both strawberry cultivars. Furthermore, the findings indicated that Sweet Sensation responded more positively to higher nitrogen doses than Rubygem in all aspects. The data showed that the utilization of 2 kgNha-1 resulted in the highest fruit yield (0.390-0.508 t/ha) and quality traits, including TSS (7.89-9.21%). While there were no significant variations in TSS content among the plants treated with different nitrogen levels, significant differences were observed between the two strawberry cultivars.

Inkjet-Printed Organohalide 2D Layered Perovskites for High-Speed Photodetectors on Flexible Polyimide Substrates.

The synthesis of solution-processed two-dimensional (2D) layered organohalide (CH3(CH2)3NH3)2(CH3NH3)n-1PbnI3n+1 (n = 2, 3, and 4) perovskites is presented, where inkjet printing was used to fabricate heterostructure flexible photodetector (PD) devices on polyimide (PI) substrates. Inks for the n = 4 formulation were developed to inkjet-print PD devices that were photoresponsive to broadband incoming radiation in the visible regime, where the peak photoresponsivity R was calculated to be ∼0.17 A/W, which is higher compared to prior reports, while the detectivity D was measured to be ∼3.7 × 1012 Jones at a low light intensity F ≈ 0.6 mW/cm2. The ON/OFF ratio was also high (∼2.3 × 103), while the response time τ on the rising and falling edges was measured to be τrise ≈ 24 ms and τfall ≈ 65 ms, respectively. Our strain-dependent measurements, conducted here for the first time for inkjet-printed perovskite PDs, revealed that the Ip decreased by only ∼27% with bending (radius of curvature of ∼0.262 cm-1). This work demonstrates the tremendous potential of the inkjet-printed, composition-tunable, organohalide 2D perovskite heterostructures for high-performance PDs, where the techniques are readily translatable toward flexible solar cell platforms as well.

Dramatic Enhancement of Optoelectronic Properties of Electrophoretically Deposited C60-Graphene Hybrids.

Fullerene (C60) and multilayer graphene hybrid devices were fabricated using electrophoretic deposition, where the C60 clusters are electrically charged upon the application of an external bias in a polar solvent, acetonitrile, mixed with toluene, which facilitates their deposition on the graphene membranes. Raman spectroscopy unveiled the unique vibrational fingerprints associated with the A2g mode of the C60 molecules at ∼1453 cm-1, while blue shifts of ∼6 and ∼17 cm-1 were also attributed to the G- and 2D-bands of the hybrids relative to bare graphene, suggestive of p-doped graphene. The intensity ratio of the G- and the 2D-bands I2D/IG (hybrid) dropped to ∼0.18 from ∼0.3 (bare graphene), and this reduction in I2D/IG is also a signature of hole-doped graphene, consistent with the relatively strong electron accepting nature of C60. The electronic conductance of the two-terminal hybrid devices increased relative to bare graphene at room temperature which was attributed to the increased carrier density, and temperature-dependent electronic transport measurements were also conducted from ambient down to ∼5.8 K. Additionally, a low energy shift in the Fermi level, EF ≈ 140 meV, was calculated for the hybrids. When the hybrid devices were irradiated with a broadband white light source and a tunable laser source (with a wavelength λ ranging from ∼400-1100 nm), a strong photoresponse was evident, in contrast to the bare graphene devices which appeared unresponsive. The responsivity R of the hybrids was measured to be ∼109 A/W at λ ≈ 400 nm and ∼298 K, while the detectivity and external quantum efficiency were also exceptional, ∼1015 jones and ∼109%, respectively, at ∼1 V and a light power density of ∼3 mW/cm2. The R values are ∼10 times higher compared to other hybrid devices derived from graphene reported previously, such as quantum dot-graphene and few-layer MoS2-graphene heterostructures. The strong photoresponse of the C60-graphene hybrids reported here is attributed to the doping enhancement arising in graphene upon the adsorption of C60. This work demonstrates the exceptional potential of such hybrid nanocarbon-based structures for optoelectronics.

Chemical exfoliation efficacy of semiconducting WS2 and its use in an additively manufactured heterostructure graphene-WS2-graphene photodiode.

In the present work, various chemical exfoliation routes for semiconducting two-dimensional (2D) layered material WS2 are explored, which include magnetic stirring (MS), shear mixing (SM), and horn-tip (HT) sonication. Current-voltage measurements, Raman spectroscopy, and photoluminescence (PL) spectroscopy were used to characterize the drop-casted WS2 nanosheets produced by these three techniques and our analysis revealed that HT sonication produced the most optimal dispersions. Heterostructure photodetector devices were then fabricated using inkjet printing of the HT sonicated dispersions of WS2 and graphene. The photodetector device performance was measured using a stream of ON/OFF light pulses generated using a red laser with wavelength λ ∼ 660 nm, and an arbitrary waveform generator. From this analysis, the photoresponsivity and detectivity of the graphene-WS2-graphene heterostructure devices were calculated to be ∼0.86 A W-1 and ∼1013 Jones, respectively. Capacitance-voltage (C-V) and C-frequency (f) measurements were also conducted, where the V was swept from -6 V to +6 V, while the change in C was measured from f ∼ 20 kHz up to 3 MHz to gain insights into the nature of the graphene-WS2 interface. From the C-V measurements, the C plateaued at ∼324.3 pF from ∼-4 V to +4 V for the lowest f of 20 kHz and it reduced to ∼200 pF from -6 V to ∼-4 V, and similarly from ∼4 V to 6 V, C was ∼190 pF. The decrease in C for V > +4 V and V < -4 V was attributed to the reduction of the interfacial barrier at the electrodes which is suggestive of a Schottky-based photodiode at the graphene-WS2 interface. A sharp decrease in C from ∼315.75 pF at 25.76 kHz to ∼23.79 pF at 480 kHz (at 0 V bias) from the C-f measurements suggests a strong effect of interface trap density on C built-up at the graphene-WS2 interface and the ensuing Schottky barrier height. Our work confirms the excellent potential of solution-cast, trilayer graphene-WS2-graphene heterostructures as a promising photodetector platform using additively manufactured inkjet printing.

Environmentally Friendly Plasma-Treated PEDOT:PSS as Electrodes for ITO-Free Perovskite Solar Cells.

Solution processed poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) transparent electrodes (TEs) offer great potential as a low cost alternative to expensive indium tin oxide (ITO). However, strong acids are typically used for enhancing the conductivity of PEDOT:PSS TEs, which produce processing complexity and environmental issues. This work presents an environmentally friendly acid free approach to enhance the conductivity of PEDOT:PSS using a light oxygen plasma treatment, in addition to solvent blend additives and post treatments. The plasma treatment was found to significantly reduce the sheet resistance of PEDOT:PSS TEs from 85 to as low as 15 Ω sq-1, which translates to the highest reported conductivity of 5012 S/cm for PEDOT:PSS TEs. The plasma treated PEDOT:PSS TE resulted in an ITO-free perovskite solar cell efficiency of 10.5%, which is the highest reported efficiency for ITO-free perovskite solar cells with a PEDOT:PSS electrode that excludes the use of acid treatments. This research presents the first demonstration of this technology. Moreover, the PEDOT:PSS TEs enabled better charge extraction from the perovskite solar cells and reduced hysteresis in the current density-voltage (J-V) curves.

Shelf life stability comparison in air for solution processed pristine PDPP3T polymer and doped spiro-OMeTAD as hole transport layer for perovskite solar cell.

This data in brief includes forward and reverse scanned current density-voltage (J-V) characteristics of perovskite solar cells with PDPP3T and spiro-OMeTAD as HTL, stability testing conditions of perovskite solar cell shelf life in air for both PDPP3T and spiro-OMeTAD as HTL as per the description in Ref. [1], and individual J-V performance parameters acquired with increasing time exposed in ambient air are shown for both type of devices using PDPP3T and spiro-OMeTAD as HTL. The data collected in this study compares the device stability with time for both PDPP3T and spiro-OMeTAD based perovskite solar cells and is directly related to our research article "solution processed pristine PDPP3T polymer as hole transport layer for efficient perovskite solar cells with slower degradation" [2].

Crystallization of a perovskite film for higher performance solar cells by controlling water concentration in methyl ammonium iodide precursor solution.

An optimal small amount of water added into methyl ammonium iodide (MAI) solution in isopropyl alcohol (IPA) helps perovskite crystallization and leads to larger grain size from sequential deposition of perovskite films. The concentration of water was varied from 1% to 7% (vol% of IPA) in MAI solution and optical absorption, crystallization, morphology of perovskite films and their photovoltaic performance were studied in perovskite solar cells. 5% by volume was found to lead to preferential crystallization in the (110) plane with grain size about three times that of perovskite films prepared without adding water into the MAI solution. The optimal water concentration of 5% by volume in the MAI solution led to average perovskite grain size of ∼600 nm and solar cell efficiency of 12.42% at forward scan with a rate of 0.5 V s(-1). Device performance decreases after increasing water concentration beyond 5% in the MAI solution due to formation of the PbI2 phase. Transient photocurrent and photovoltage measurements show the shortest charge transport time at 0.99 µs and the longest charge carrier life time at 13.6 µs for perovskite films prepared from 5% water in MAI solution, which improved perovskite solar cell efficiency from 9.04% to 12.42%.

Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells.

We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance.

Origin of photogenerated carrier recombination at the metal-active layer interface in polymer solar cells.

The role of the metal-active layer interface in photogenerated recombination has been investigated using nanoscale current sensing atomic force microscopy (CS-AFM) and intensity modulated photocurrent spectroscopy (IMPS) in as-deposited, pre-annealed and post-annealed bulk heterojunction (BHJ) solar cells. Aluminum (Al) confined post-annealed BHJ solar cells exhibited a significantly improved device efficiency compared to pre-annealed BHJ solar cells having similar photocarrier harvesting ability in the active layer. The nanoscale topography and CS-AFM results indicate a uniform PCBM rich phase at the metal-active layer interface in the post-annealed cells, but PCBM segregation in the pre-annealed cells. These two different annealing processes showed different carrier dynamics revealed using IMPS under various light intensities. The IMPS results suggest reduced photo generated carrier recombination in uniform PCBM rich post-annealed BHJ solar cells. This study reveals the importance of the metal-bend interface in BHJ solar cells in order to obtain efficient charge carrier extraction for high efficiency.

Benzothiadiazole-based polymer for single and double junction solar cells with high open circuit voltage.

Single and double junction solar cells with high open circuit voltage were fabricated using poly{thiophene-2,5-diyl-alt-[5,6-bis(dodecyloxy)benzo[c][1,2,5]thiadiazole]-4,7-diyl} (PBT-T1) blended with fullerene derivatives in different weight ratios. The role of fullerene loading on structural and morphological changes was investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD). The XRD and AFM measurements showed that a higher fullerene mixing ratio led to breaking of inter-chain packing and hence resulted in smaller disordered polymer domains. When the PBT-T1:PC60BM weight ratio was 1 : 1, the polymer retained its structural order; however, large aggregated domains formed, leading to poor device performance due to low fill factor and short circuit current density. When the ratio was increased to 1 : 2 and then 1 : 3, smaller amorphous domains were observed, which improved photovoltaic performance. The 1 : 2 blending ratio was optimal due to adequate charge transport pathways giving rise to moderate short circuit current density and fill factor. Adding 1,8-diiodooctane (DIO) additive into the 1 : 2 blend films further improved both the short circuit current density and fill factor, leading to an increased efficiency to 4.5% with PC60BM and 5.65% with PC70BM. These single junction solar cells exhibited a high open circuit voltage at ∼ 0.9 V. Photo-charge extraction by linearly increasing voltage (Photo-CELIV) measurements showed the highest charge carrier mobility in the 1 : 2 film among the three ratios, which was further enhanced by introducing the DIO. The Photo-CELIV measurements with varying delay times showed significantly higher extracted charge carrier density for cells processed with DIO. Tandem devices using P3HT:IC60BA as bottom cell and PBT-T1:PC60BM as top cell exhibited a high open circuit voltage of 1.62 V with 5.2% power conversion efficiency.

Interplay of nanoscale domain purity and size on charge transport and recombination dynamics in polymer solar cells.

Charge transport and bimolecular recombination dynamics were correlated with nanomorphology in polymer solar cells. The morphology of poly(diketopyrrolopyrrole-terthiophene) (PDPP3T) and phenyl-C61-butyric acid methyl ester (PC60BM) blend films was modified using different solvent additives namely 1-chloronaphthalene (CN), 1,8-diiodooctane (DIO) and 1,8-octanedithiol (ODT) and their role on steady state and transient optoelectronic properties was investigated. The energy filtered transmission electron microscopy (EFTEM) images showed that additives (e.g. CN and DIO) improved the domain purity which leads to significantly higher short circuit current densities (Jsc). However when the cells were processed with the ODT additive, the fill factor (FF) and open circuit voltage (Voc) decreased dramatically. Films processed with the ODT additive showed a smaller domain size but were more connected compared to films processed using CN and DIO additives. Transient photocurrent analysis indicates faster charge collection in the case of CN and DIO processed solar cells and the slowest charge collection in ODT processed solar cells. Interestingly devices processed with the ODT additive also showed the longest charge carrier recombination lifetime and lowest bimolecular recombination coefficient. This is attributed to the smaller donor domains that are connected with each other to provide a more interconnected and efficient charge transport matrix but longer pathways in ODT films. Such a matrix helped the charge to escape from the donor-acceptor interfaces and thus reduces the bimolecular recombination, while the longer pathway increases the charge collection time. Further insight is provided into the selection of processing conditions to achieve an ideal active layer morphology consisting of domains with higher polymer purity and optimal size that lead to higher Jsc and FF.

Enhanced charge transport and photovoltaic performance of PBDTTT-C-T/PC70BM solar cells via UV-ozone treatment.

In this work, the electron transport layer of PBDTTT-C-T/PC70BM polymer solar cells were subjected to UV-ozone treatment, leading to improved cell performances from 6.46% to 8.34%. The solar cell efficiency reached a maximum of 8.34% after an optimal 5 minute UV-ozone treatment, and then decreased if treated for a longer time. To the best of our knowledge, the mechanism behind the effects of UV-ozone treatment on the improvement of charge transport and cell performance is not fully understood. We have developed a fundamental understanding of the UV-ozone treatment mechanism, which explains both the enhancements in charge transport and photovoltaic performance at an optimal treatment time, and also the phenomenon whereby further treatment time leads to a drop in cell efficiency. Transient photocurrent measurements indicated that the cell charge transport times were 1370 ns, 770 ns, 832 ns, 867 ns, and 1150 ns for the 0 min, 5 min, 10 min, 15 min, and 20 min UV-ozone treatment times, respectively. Therefore the 5 min UV-ozone treatment time led to the shortest transport time and the most efficient charge transport in the cells. The 5 min UV-ozone treated sample exhibited the highest peak intensity (E2) in the Raman spectra of the treated films, at about 437 cm(-1), indicating that it possessed the best wurtzite phase crystallinity of the ZnO films. Further increasing the UV-ozone treatment time from 5 to 20 min induced the formation of p-type defects (e.g. interstitial oxygen atoms), pushing the ZnO Fermi-level further away from the vacuum level, and decreasing the wurtzite crystallinity.

Photovoltaic devices and characterization of a dodecyloxybenzothiadiazole-based copolymer.

A conjugated copolymer based on alternating benzo[1,2-b;3,4-b']dithiophene (BDT) donor and dodecyloxy substituted benzo[c][1,2,5]thiadiazole (ABT) acceptor units was prepared for application in organic solar cells. A power conversion efficiency (PCE) of ~3% with a short-circuit current (Jsc) of 7.63 mA cm(-2), an open-circuit voltage (Voc) of 0.71 V and a fill-factor (FF) of 53.74% was obtained under the illumination of AM 1.5 solar irradiation (100 mW cm(-2)). Photovoltaic devices and their transient properties with a blend of the copolymer and the [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) at different ratios were studied using transient photovoltage (TPV), transient photocurrent (TPC) and atomic force microscopy (AFM) measurements. From the TPV and TPC measurements, the charge recombination times (τn) were found to be 21.1 µs, 12.6 µs and 10.5 µs, and the charge transport times (τd) were 1316 ns, 422 ns and 707 ns for the 1 : 0.5, 1 : 1 and 1 : 2 donor/acceptor (D/A) ratios, respectively. The 1 : 1 D/A ratio showed the shortest charge transport time (τd) and the longest charge diffusion length (Ln) according to L(n) [proportionality] √[τ(n)/τ(d)], leading to the highest device performance among the three ratios.