Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment.

The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0 0 0 1) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro-steps evolving during graphene growth. A more advantageous type of sub-nanometer stepped graphene layers is obtained with a new method: a high-temperature conditioning of the SiC surface in argon atmosphere. The results can be explained by the observed graphene buffer layer domains after the conditioning process which suppress giant step bunching and graphene step flow growth. The superior electronic quality is demonstrated by a less extrinsic resistance anisotropy obtained in nano-probe transport experiments and by the excellent quantization of the Hall resistance in low-temperature magneto-transport measurements. The quantum Hall resistance agrees with the nominal value (half of the von Klitzing constant) within a standard deviation of 4.5 × 10(-9) which qualifies this method for the fabrication of electrical quantum standards.

All-carbon vertical van der Waals heterostructures: non-destructive functionalization of graphene for electronic applications.

Non-destructive chemical functionalization of graphene for applications in electronic devices (e.g., sensors or transducers) is achieved via assembly of carbon nanomembrane (CNM)/single-layer graphene (SLG) van der Waals heterostructures. The CNMs are 1 nm-thick, dielectric molecular sheets terminated with functional amino groups. The structure and performance of heterostructured field-effect transistors (FETs) are characterized by photoelectron/Raman spectroscopy and by electric transport measurements in vacuum, ambient conditions and water.

Functional single-layer graphene sheets from aromatic monolayers.

Self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. This two-dimensional solid state transformation is characterized on the atomic scale and the physical and chemical properties of the formed graphene sheets are studied by complementary microscopic and spectroscopic techniques and by electrical transport measurements. As substrates, Cu(111) single crystals and the technologically relevant polycrystalline copper foils are successfully used.

AFM diagnostics of graphene-based quantum Hall devices.

In this paper we present the results of morphological, mechanical and electrical investigation of the properties of prepared graphene flakes and graphene-based quantum Hall devices. AFM imaging allowed us to identify the local imperfections and unintentional modifications of the graphene sheets which had caused severe deterioration of the device electrical performance. Utilizing the NanoSwing imaging method, based on the time-resolved tapping mode, we could observe non-homogeneities of the structural and mechanical properties. We also diagnosed the device under working conditions by Kelvin probe microscopy and detected its local electric field distribution.

Versatile sputtering technology for Al2O3 gate insulators on graphene.

We report a novel, sputtering-based fabrication method of Al2O3 gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm2 V-1 s-1 in monolayer graphene and 350 cm2 V-1 s-1 in bilayer graphene, respectively. The mobility decrease can be attributed to the resonant scattering on atomic-scale defects, likely originating from the Al precursor layer evaporated prior to sputtering.