Vapor phase detection of explosives by surface enhanced Raman scattering under ambient conditions with metal nanogap structures.

Non-invasive and passive detection of explosives in the vapor phase is advantageous for military, counter-terrorism, and homeland security applications. Detection of explosives using SERS has been an active research topic. However, the vapor pressures of most explosives are low at room temperature, and consequently, the vapor phase detection by SERS is highly challenging without intentionally heating explosive powder to increase the vapor pressure. In this work, we report the rapid and sensitive detection of 2,4,6-trinitrotoluene (TNT) and 2,4-dinitrotoluene (2,4-DNT) in the vapor phase, using a gold nanogap (AuNG) SERS substrate. The AuNG SERS substrate was fabricated with electron beam evaporation, rapid thermal annealing, and wet etching. SERS measurements were carried out with an incident power as low as 0.56 mW at 785 nm. To prevent the condensation effect, the TNT and 2,4-DNT powders inside the cuvette were taken out before inserting the nanogap substrate. Our SERS results demonstrate the feasibility of the non-invasive detection of vapor phase explosives under ambient conditions.

Design of a bidirectional TM01(TE01)-LP01 mode converter with a metasurface-on-fiber.

Mode conversion is crucial for coupling a light source to a desired waveguide. While traditional mode converters such as fiber Bragg gratings and long-period fiber gratings exhibit high transmission and conversion efficiency, the mode conversion of two orthogonal polarizations remains challenging. Here, we present a bidirectional metasurface mode converter that can convert the transverse electric (TE)01 or transverse magnetic (TM)01 mode to the fundamental mode (LP01) with orthogonal polarization, and vice versa. The mode converter is located on a facet of a few-mode fiber and connected to a single mode fiber. Through simulations, we find that 99.9% of the TM01 or TE01 mode is converted into the x- or y-polarized LP01 mode, and that 99.96% of the x- or y-polarized LP01 mode is converted to the TM01 or TE01 mode. Furthermore, we expect a high transmission of over 84.5% for all mode conversions, up to 88.7% for TE01 to y-polarized LP01 conversion.

Dynamics of surface-plasmon lasing in planar metal gratings on semiconductor.

We investigate the dynamics of surface plasmon (SP) lasing in Au gratings fabricated on InGaAs with a period of around 400 nm, which locates the SP resonance near the semiconductor energy gap and facilitates efficient energy transfer. By optically pumping the InGaAs to reach the population inversion required for the amplification and the lasing, we observe SP lasing at specific wavelengths that satisfy the SPR condition depending on the grating period. The carrier dynamics in semiconductor and the photon density in the SP cavity was investigated from the time-resolved pump-probe measurement and the time resolved photoluminescence spectroscopy, respectively. Our results reveal that the photon dynamics is strongly correlated with the carrier dynamics and the lasing build-up is accelerated as the initial gain proportional to the pumping power increases, and this trend is satisfactorily explained using the rate equation model.