Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates.

Silicon (Si) films were deposited on low-cost graphite substrates by the electrochemical reduction of silicon dioxide nanoparticles (nano-SiO2) in calcium chloride (CaCl2), melted at 855 °C. Cyclic voltammetry (CV) was used to analyze the electrochemical reduction mechanism of SiO2 to form Si deposits on the graphite substrate. X-ray diffraction (XRD) along with Raman and photoluminescence (PL) results show that the crystallinity of the electrodeposited Si-films was improved with an increase of the applied reduction potential during the electrochemical process. Scanning electron microscopy (SEM) reveals that the size, shape, and morphology of the Si-layers can be controlled from Si nanowires to the microcrystalline Si particles by controlling the reduction potentials. In addition, the morphology of the obtained Si-layers seems to be correlated with both the substrate materials and particle size of the feed materials. Thus, the difference in the electron transfer rate at substrate/nano-SiO2 interface due to different applied reduction potentials along with the dissolution rate of SiO2 particles during the electrochemical reduction process were found to be crucial in determining the microstructural properties of the Si-films.

Improvement of Stability for Small Molecule Organic Solar Cells by Suppressing the Trap Mediated Recombination.

To understand the degradation mechanism of organic solar cells (OSCs), the charge dynamics of conventional and inverted planar heterojunction OSCs based on boron subthalocyanine chloride (SubPc) and fullerene (C60) with identical buffers during the air exposure were investigated. The results of light intensity dependent open circuit voltage show that the bimolecular recombination is dominated in the fresh devices, regardless of the device structure. The appearance of transient peak in photocurrent after turn-on and the light intensity independent turn-off traces in transient photocurrent suggest that the rapid degradation of conventional device is due to the energy loss originated from the aggravated trap mediated recombination. In contrast, the half-lifetime of inverted device is ∼25 times longer than the conventional one. The improvement of stability is ascribed to the decrease of the trap generation possibility and the suppression of trap mediated recombination in the case of inverted structure, where the penetration of oxygen and water through buffer layer is avoided.