Non-Invasive Brain Sensing Technologies for Modulation of Neurological Disorders.

The non-invasive brain sensing modulation technology field is experiencing rapid development, with new techniques constantly emerging. This study delves into the field of non-invasive brain neuromodulation, a safer and potentially effective approach for treating a spectrum of neurological and psychiatric disorders. Unlike traditional deep brain stimulation (DBS) surgery, non-invasive techniques employ ultrasound, electrical currents, and electromagnetic field stimulation to stimulate the brain from outside the skull, thereby eliminating surgery risks and enhancing patient comfort. This study explores the mechanisms of various modalities, including transcranial direct current stimulation (tDCS) and transcranial magnetic stimulation (TMS), highlighting their potential to address chronic pain, anxiety, Parkinson's disease, and depression. We also probe into the concept of closed-loop neuromodulation, which personalizes stimulation based on real-time brain activity. While we acknowledge the limitations of current technologies, our study concludes by proposing future research avenues to advance this rapidly evolving field with its immense potential to revolutionize neurological and psychiatric care and lay the foundation for the continuing advancement of innovative non-invasive brain sensing technologies.

Detailed Study of the Correlation between Cross-Linking of Thick SU-8 and UV-NIR Optical Transmission/Photoluminescence Spectroscopy.

SU-8 polymers are promising materials for various applications due to their low cost, excellent thermal stability, and outstanding mechanical properties. Cross-linking of SU-8 is a crucial process that determines the properties of the materials. This study investigates the effect of cross-linking of free-standing SU-8 films on optical transmission and PL emission under various curing conditions. Our findings show that an increase in the cross-linking density reduces optical transmission and causes a red shift of the PL emission band peaks. By directly measuring the optical response of the isolated SU-8, we remove any uncertainty due to the substrate's presence. Moreover, we show that optical transmission and PL spectroscopy are two non-distractive techniques that can be employed to monitor the curing of the SU-8. This finding enhances our understanding of the cross-linking process in SU-8 and paves the way to further enhance the properties of the SU-8 polymer for various electronics and optoelectronics applications.

Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters.

This work presents a study of photoconductive (PC) terahertz (THz) emitters based upon varied bow-tie (BT) antenna structures on the semi-insulating (SI) forms of GaAs and InP. The BT antennas have electrodes in the form of a Sharp BT, a Broad BT, an Asymmetric BT, a Blunted BT, and a Doubled BT. The study explores the main features of PC THz emitters for spectroscopic studies and sensors application in terms of THz field amplitude and spectral bandwidth. The emitters' performance levels are found to depend strongly upon the PC material and antenna structure. The SI-InP emitters display lower THz field amplitude and narrower bandwidth compared to the SI-GaAs emitters with the same structure (and dimensions). The characterized Doubled BT structure yields a higher THz field amplitude, while the characterized Asymmetric BT structure with flat edges yields a higher bandwidth in comparison to the sharp-edged structures. This knowledge on the PC THz emitter characteristics, in terms of material and structure, can play a key role in future implementations and applications of THz sensor technology.

Photoconductive terahertz generation in semi-insulating GaAs and InP under the extremes of bias field and pump fluence.

This Letter analyzes photoconductive (PC) terahertz (THz) emitters based on the semi-insulating (SI) forms of GaAs and InP. The dependencies of the emitters are studied under the extremes of the bias field and pump fluence to reveal the underlying physics of charge carrier photoexcitation, transport, and emission. The bias field dependence shows that SI-GaAs PC THz emitters are preferentially subject to space-charge-limited current, under the influence of trap states, while SI-InP PC THz emitters are preferentially subject to sustained current, due to a prolonged charge carrier lifetime and the ensuing joule heating. The pump fluence dependence shows space-charge and near-field screening for all emitters, with SI-GaAs predisposed to near-field screening (under the influence of transient mobility) and SI-InP predisposed to space-charge screening. Such findings can support a deeper understanding of the underlying physics and optimal performance of SI-GaAs and SI-InP PC THz emitters.

Developments in the integration and application of terahertz spectroscopy with microfluidics.

This work presents an overview of terahertz (THz) spectroscopy with a focus on its implementation within microfluidic platforms. Such platforms are of great interest because they can enable label-free and reagent-free sensing. However, they must be implemented with thought towards the incorporated materials and structures as they can greatly impact the bandwidth, frequency resolution, signal-to-noise ratio, and dynamic range of the measurements. This review explores such relationships with insight given on the design and material considerations for the effective integration of THz spectroscopy in microfluidic platforms. The review also describes recent work on the application of THz spectroscopy to biomaterial analyses on increasing scales, targeting DNA, proteins, cells, and tissues.

Characterization and Integration of Terahertz Technology within Microfluidic Platforms.

In this work, the prospects of integrating terahertz (THz) time-domain spectroscopy (TDS) within polymer-based microfluidic platforms are investigated. The work considers platforms based upon the polar polymers polyethylene terephthalate (PET), polycarbonate (PC), polymethyl-methacrylate (PMMA), polydimethylsiloxane (PDMS), and the nonpolar polymers fluorinated ethylene propylene (FEP), polystyrene (PS), high-density polyethylene (HDPE), and ultra-high-molecular-weight polyethylene (UHMWPE). The THz absorption coefficients for these polymers are measured. Two microfluidic platforms are then designed, fabricated, and tested, with one being based upon PET, as a representative high-loss polar polymer, and one being based upon UHMWPE, as a representative low-loss nonpolar polymer. It is shown that the UHMWPE microfluidic platform yields reliable measurements of THz absorption coefficients up to a frequency of 1.75 THz, in contrast to the PET microfluidic platform, which functions only up to 1.38 THz. The distinction seen here is attributed to the differing levels of THz absorption and the manifestation of differing f for the systems. Such findings can play an important role in the future integration of THz technology and polymer-based microfluidic systems.