RESUMO
Semiconductor heterostructures have been the backbone of developments in electronic and optoelectronic devices. One class of structures of interest is the so-called type II band alignment, in which optically excited electrons and holes relax into different material layers. The unique properties observed in two-dimensional transition metal dichalcogenides and the possibility to engineer van der Waals heterostructures make them candidates for future high-tech devices. In these structures, electronic, optical, and magnetic properties can be tuned through the interlayer coupling, thereby opening avenues for developing new functional materials. We report the possibility of explicitly tuning the emission of interlayer exciton energies in the binary-ternary heterobilayer of Mo0.5W0.5Se2 with MoSe2 and WSe2. The respective interlayer energies of 1.516 eV and 1.490 eV were observed from low-temperature photoluminescence measurements for the MoSe2- and WSe2- based heterostructures, respectively. These interlayer emission energies are above those reported for MoSe2/WSe2 (≃1.30-1.45 eV). Consequently, binary-ternary heterostructure systems offer an extended energy range and tailored emission energies not accessible with the binary counterparts. Moreover, even though Mo0.5W0.5Se2 and MoSe2 have almost similar optical gaps, their band offsets are different, resulting in charge transfer between the monolayers following the optical excitation. Thus, confirming TMDs alloys can be used to tune the band-offsets, which adds another design parameter for application-specific optoelectronic devices.
RESUMO
Two-dimensional (2D) heterostructures (HS) formed by transition-metal dichalcogenide (TMDC) monolayers offer a unique platform for the study of intralayer and interlayer excitons as well as moiré-pattern-induced features. Particularly, the dipolar charge-transfer exciton comprising an electron and a hole, which are confined to separate layers of 2D semiconductors and Coulomb-bound across the heterojunction interface, has drawn considerable attention in the research community. On the one hand, it bears significance for optoelectronic devices, e.g. in terms of charge carrier extraction from photovoltaic devices. On the other hand, its spatially indirect nature and correspondingly high longevity among excitons as well as its out-of-plane dipole orientation render it attractive for excitonic Bose-Einstein condensation studies, which address collective coherence effects, and for photonic integration schemes with TMDCs. Here, we demonstrate the interlayer excitons' out-of-plane dipole orientation through angle-resolved spectroscopy of the HS photoluminescence at cryogenic temperatures, employing a tungsten-based TMDC HS. Within the measurable light cone, the directly-obtained radiation profile of this species clearly resembles that of an in-plane emitter which deviates from that of the intralayer bright excitons as well as the other excitonic HS features recently attributed to artificial superlattices formed by moiré patterns.
