Reconfigurable VO2 metasurfaces with hybrid electro-optical control: manipulating THz radiation with 0.3 W/cm2 light.

Dynamicallyprogrammable metasurfaces capable of manipulating terahertz (THz) wavefronts in various manners depending on external controls are highly desired for next-generation wireless communication systems and new tools for THz diagnostics. Such metasurfaces may utilize the insulator-to-metal transition in V O 2, which can be induced both electrically and optically. Optical control is especially convenient for individual addressing to each meta-atom, but it is hampered by the high optical switching threshold of V O 2. We experimentally realize V O 2-based THz metasurfaces with hybrid electro-optical control when the metasurface is brought close to the transition point by an almost-threshold current, and then is easily switched by unfocused continuous-wave light. We were able to control the metasurface THz transmission by 0.4W/c m 2 near-IR light, while purely optical switching required tightly focused light with an intensity of >3×105 W/c m 2. After correcting for the fact that a tightly focused spot dissipates heat easier, we estimate that the optical switching threshold reduction due to the electric current alone is ∼2 orders of magnitude. Finally, coating the metasurface with Au nanoparticles further reduced the threshold by 30% due to plasmonic effects.

Ultralow-noise Terahertz Detection by p-n Junctions in Gapped Bilayer Graphene.

Graphene shows strong promise for the detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's physical properties on the detected radiation can be traced down to the absence of a band gap. Here, we study the effect of electrically induced band gap on THz detection in graphene bilayer with split-gate p-n junction. We show that gap induction leads to a simultaneous increase in current and voltage responsivities. At operating temperatures of ∼25 K, the responsivity at a 20 meV band gap is from 3 to 20 times larger than that in the gapless state. The maximum voltage responsivity of our devices at 0.13 THz illumination exceeds 50 kV/W, while the noise equivalent power falls down to 36 fW/Hz1/2.

Feasibility of surface plasmon lasing in HgTe quantum wells with population inversion.

Surface plasmon lasing in semiconductor gain media at far-infrared frequencies requires simultaneously long non-radiative recombination times and large plasmon propagation length. In this paper, we show that these conditions are realized in mercury-telluride quantum wells (HgTe QWs) near the topological transition. We derive the conditions of surface plasmon amplification in HgTe QWs with interband population inversion. To this end, we calculate the spatially-dispersive high-frequency conductivity of pumped HgTe QWs taking into account their realistic band structure, and compare the interband gain with Drude absorption and collisionless Landau damping. An extra necessary condition of plasmon lasing is revealed, namely, the non-equilibrium carrier density should be high enough to make the plasmon spectrum overlap with the frequency domain of interband excitations. The latter condition limits the processes of both stimulated and spontaneous plasmon emission at low temperatures, and should have a strong impact on the recombination kinetics of HgTe QWs at low temperatures.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities.

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 10(4) ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 µV/dec)(-1) just above the threshold. The high ON-state current of 0.8 mA/µm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling.