Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays.

Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30-100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnTe). In the context of this article, we have developed pixelated sensors from CdZnTe crystals grown by Boron oxide encapsulated vertical Bridgman technique. We demonstrate the successful fabrication of CdZnTe pixel sensors with a fine pitch of 55 m and thickness of 1 mm and 2 mm. The sensors were bonded on Timepix readout chips to evaluate their response to X-rays provided by conventional sources. Despite the issues related to single-chip fabrication procedure, reasonable uniformity was achieved along with low leakage current values at room temperature. In addition, the sensors show stable performance over time at moderate incoming fluxes, below 106 photons mm-2s-1.

Recent advances in the development of high-resolution 3D cadmium-zinc-telluride drift strip detectors.

In the last two decades, great efforts have been made in the development of 3D cadmium-zinc-telluride (CZT) detectors operating at room temperature for gamma-ray spectroscopic imaging. This work presents the spectroscopic performance of new high-resolution CZT drift strip detectors, recently developed at IMEM-CNR of Parma (Italy) in collaboration with due2lab (Italy). The detectors (19.4 mm × 19.4 mm × 6 mm) are organized into collecting anode strips (pitch of 1.6 mm) and drift strips (pitch of 0.4 mm) which are negatively biased to optimize electron charge collection. The cathode is divided into strips orthogonal to the anode strips with a pitch of 2 mm. Dedicated pulse processing analysis was performed on a wide range of collected and induced charge pulse shapes using custom 32-channel digital readout electronics. Excellent room-temperature energy resolution (1.3% FWHM at 662 keV) was achieved using the detectors without any spectral corrections. Further improvements (0.8% FWHM at 662 keV) were also obtained through a novel correction technique based on the analysis of collected-induced charge pulses from anode and drift strips. These activities are in the framework of two Italian research projects on the development of spectroscopic gamma-ray imagers (10-1000 keV) for astrophysical and medical applications.

Room-temperature X-ray response of cadmium-zinc-telluride pixel detectors grown by the vertical Bridgman technique.

In this work, the spectroscopic performances of new cadmium-zinc-telluride (CZT) pixel detectors recently developed at IMEM-CNR of Parma (Italy) are presented. Sub-millimetre arrays with pixel pitch less than 500 µm, based on boron oxide encapsulated vertical Bridgman grown CZT crystals, were fabricated. Excellent room-temperature performance characterizes the detectors even at high-bias-voltage operation (9000 V cm-1), with energy resolutions (FWHM) of 4% (0.9 keV), 1.7% (1 keV) and 1.3% (1.6 keV) at 22.1, 59.5 and 122.1 keV, respectively. Charge-sharing investigations were performed with both uncollimated and collimated synchrotron X-ray beams with particular attention to the mitigation of the charge losses at the inter-pixel gap region. High-rate measurements demonstrated the absence of high-flux radiation-induced polarization phenomena up to 2 × 106 photons mm-2 s-1. These activities are in the framework of an international collaboration on the development of energy-resolved photon-counting systems for high-flux energy-resolved X-ray imaging.