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1.
Adv Sci (Weinh) ; 10(31): e2302631, 2023 Nov.
Artigo em Inglês | MEDLINE | ID: mdl-37737620

RESUMO

The intractable brittleness and opacity of the crystalline semiconductor restrict the prospect of developing low-cost imaging systems. Here, infrared visualization technologies are established with large-area, semi-transparent organic upconversion devices that bring high-resolution invisible images into sight without photolithography. To exploit all photoinduced charge carriers, a monolithic device structure is proposed built on the infrared-selective, single-component charge generation layer of chloroaluminum phthalocyanine (ClAlPc) coupled to two visible light-emitting layers manipulated with unipolar charges. Transient pump-probe spectroscopy reveals that the ClAlPc-based device exhibits an efficient charge dissociation process under forward bias. This process is indicated by the prompt and strong features of electroabsorption screening. Furthermore, by imposing the electric field, the ultrafast excited state dynamic suggests a prolonged charge carrier lifetime from the ClAlPc, which facilitates the charge utilization for upconversion luminance. For the first time, >30% of the infrared photons are utilized without photomultiplication strategies owing to the trivial spectrum overlap between ClAlPc and the emitter. In addition, the device can broadcast the acoustic signal by synchronizing the device frequency with the light source, which enables to operate it in dual audio-visual mode. The work demonstrates the potential of upconversion devices for affordable infrared imaging in wearable electronics.

2.
ACS Appl Mater Interfaces ; 10(28): 24090-24098, 2018 Jul 18.
Artigo em Inglês | MEDLINE | ID: mdl-29943574

RESUMO

We report a new efficient exciplex-forming system consisting of a biscarbazole donor and a triazine-based acceptor. The new exciplex was characterized with a high photoluminescence quantum yield up to 68% and effective thermally activated delayed fluorescence behavior. The BCzPh:3P-T2T (2:1, 30 nm) blend was examined not only as an emitting layer (device D1) but also a reliable co-host of fluorescent and phosphorescent emitters for giving highly efficient exciplex-based organic light-emitting diodes (OLEDs) with a high maximum external quantum efficiency of 15.5 and 29.7% for devices doped with 1 wt % C545T (device D2) and 8 wt % Ir(ppy)2(acac) (device D4), respectively. More strikingly, a strongly enhanced lifetime ( T75 = 16 927 min.) of the C545T-doped device was obtained. The transient electroluminescence measurement as well as capacitance-voltage and impedance-voltage correlations were utilized to explore the factors governing the high efficiency and stability. The obtained results clearly show that the energy transfer and charge transport is highly efficient; they also show the photoelectric semiconducting characteristics of exciplex-based OLEDs, which are significantly different from those of unipolar host-based reference devices D3 (Alq3: 1 wt % C545T) and D5 (CBP: 8 wt % Ir(ppy)2(acac)). Our works have established a systematic protocol to shed light on the mechanisms behind exciplex-based devices. The combined results also confirm the bright prospect of the exciplex-forming system as the co-host for highly efficient and stable OLEDs.

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