Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications.

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes.

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs.

Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods.

The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devices.

We propose a four-bit-per-cell program method using a two-step sequence with substrate-bias assisted hot electron (SAHE) injection into the charge trap flash memory devices in order to overcome the limitations of conventional four-bit program methods, which use channel hot electron (CHE) injection. With this proposed method, a localized charge injection near the junction edge with an acceptable read margin was clearly observed, along with a threshold voltage difference of 1 V between the forward and the reverse read. In addition, a multi-level storage was easily obtained using a drain voltage step of 1 V at each level of the three programmed states, along with a fast program time of 1 micros. Finally, by using charge pumping methods, we directly observed the detailed information on the spatial distribution of the local threshold voltage in each level of the four states, for each physical bit, as a function of the program voltage.

Improved light extraction from large-area vertical light-emitting diodes with deep hole-patterns using nanosphere lithography.

The authors report on an improved light extraction method from large-area vertical light emitting diodes (VLEDs) with deep hole-patterns fabricated using nanosphere lithography. In order to produce the ordered deep-hole patterns on the n-type GaN surface, a 150 nm thick Ni dot mask formed via a lift-off process of the Ni coated onto a 500 nm diameter polystylene bead array was employed to enable deep etching. Three VLEDs-one as a reference with no patterns, and two with periodic 360 nm diameter hole patterns, one with 1.0 microm and the other with 1.5 microm depths on the n-type GaN surface, were prepared for comparison. The light output power measured for the VLEDs with the hole-patterns increased by 4.13 and 4.86 times, respectively, as compared to the reference VLED. These enhancements are attributed to the multiple scatterings of the light from the sidewall of the hole-patterns and to the increased surface area to which the light can approach. The higher light output power obtained for the VLEDs with the deep hole patterns might be due to a photon reabsorption reduction within the n-GaN layer.

Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/silicon capacitors with blocking oxide layers formed under the radical oxidation process.

We propose a Metal-Oxide-Nitride-Oxide-Silicon (MONOS) structure whose blocking oxide is formed by radical oxidation on the silicon nitride (Si3N4) layer to improve the electrical and reliability characteristics. We directly compare the electrical and reliability properties of the MONOS capacitors with two different blocking oxide (SiO2) layers, which are called a "radical oxide" grown by the radical oxidation and a "CVD oxide" deposited by chemical vapor deposition (CVD) respectively. The MONOS capacitor with a radical oxide shows a larger C-V memory window of 3.6 V at sweep voltages from 9 V to -9 V, faster program/erase speeds of 1 micros/1 ms at bias voltages of -6 V and 8 V, a lower leakage current of 7 pA and a longer data retention, compared to those of the MONOS capacitor with a CVD oxide. These improvements have been attributed to both high densification of blocking oxide film and increased nitride-related memory traps at the interface between the blocking oxide and Si3N4 layer by radical oxidation.