Antiferromagnetic magnon spintronic based on nonreciprocal and nondegenerated ultra-fast spin-waves in the canted antiferromagnet α-Fe2O3.

Spin-waves in antiferromagnets hold the prospects for the development of faster, less power-hungry electronics and promising physics based on spin superfluids and coherent magnon condensates. For both these perspectives, addressing electrically coherent antiferromagnetic spin-waves is of importance, a prerequisite that has been so far elusive, because, unlike ferromagnets, antiferromagnets couple weakly to radiofrequency fields. Here, we demonstrate the detection of ultra-fast nonreciprocal spin-waves in the dipolar exchange regime of a canted antiferromagnet using both inductive and spintronic transducers. Using time-of-flight spin-wave spectroscopy on hematite (α-Fe2O3), we find that the magnon wave packets can propagate as fast as 20 kilometers/second for reciprocal bulk spin-wave modes and up to 6 kilometers/second for surface spin-waves propagating parallel to the antiferromagnetic Néel vector. We lastly achieve efficient electrical detection of nonreciprocal spin-wave transport using nonlocal inverse spin-Hall effects. The electrical detection of coherent nonreciprocal antiferromagnetic spin-waves paves the way for the development of antiferromagnetic and altermagnet-based magnonic devices.

Optical Frequency Up-Conversion of the Ferromagnetic Resonance in an Ultrathin Garnet Mediated by Magnetoelastic Coupling.

We perform ultrafast pump-probe measurements on a nanometer-thick crystalline Bi-doped yttrium iron garnet film with perpendicular magnetic anisotropy. Tuning the photon energy of the pump laser pulses above and below the material's band gap, we trigger ultrafast optical and spin dynamics via both one- and two-photon absorption. Contrary to the common scenario, the optically induced excitation induces an increase up to 20% of the ferromagnetic resonance frequency of the material. We explain this unexpected result in terms of a modification of the magnetic anisotropy caused by a long-lived photo-induced strain, which transiently and reversibly modifies the magnetoelastic coupling in the material. Our results disclose the possibility to optically increase the magnetic eigenfrequency in nanometer-thick magnets.

Voltage-Controlled Reconfigurable Magnonic Crystal at the Sub-micrometer Scale.

Multiferroics offer an elegant means to implement voltage control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nanomagnonics is expected to eventually lead to the large-scale integration of magnonic devices. However, a compact voltage-controlled, on demand reconfigurable magnonic system has yet to be shown. Here, we introduce the combination of multiferroics with ferromagnets in a fully epitaxial heterostructure to achieve such voltage-controlled and reconfigurable magnonic systems. Imprinting a remnant electrical polarization in thin multiferroic BiFeO3 with a periodicity of 500 nm yields a modulation of the effective magnetic field in the micrometer-scale, ferromagnetic La2/3Sr1/3MnO3 magnonic waveguide. We evidence the magnetoelectric coupling by characterizing the spin wave propagation spectrum in this artificial, voltage induced, magnonic crystal and demonstrate the occurrence of a robust magnonic band gap with >20 dB rejection.

Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal-Silicon-Metal Vertical Structures.

Due to the difficulty of growing high-quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was limited to lateral geometry devices. In this work, by using an ultrahigh-vacuum wafer-bonding technique, we have successfully fabricated metal-semiconductor-metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2 µm in n-type Si at room temperature. In those experiments, a pure propagating spin current is generated via ferromagnetic resonance spin pumping and converted into a measurable voltage by using the inverse spin Hall effect occurring in the top Pt layer. A systematic study varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO-Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO-Si interface states appears to be a prerequisite to establishing the necessary out-of-equilibrium spin population in Si under the spin-pumping action.

Ultra-low damping insulating magnetic thin films get perpendicular.

A magnetic material combining low losses and large perpendicular magnetic anisotropy (PMA) is still a missing brick in the magnonic and spintronic fields. We report here on the growth of ultrathin Bismuth doped Y3Fe5O12 (BiYIG) films on Gd3Ga5O12 (GGG) and substituted GGG (sGGG) (111) oriented substrates. A fine tuning of the PMA is obtained using both epitaxial strain and growth-induced anisotropies. Both spontaneously in-plane and out-of-plane magnetized thin films can be elaborated. Ferromagnetic Resonance (FMR) measurements demonstrate the high-dynamic quality of these BiYIG ultrathin films; PMA films with Gilbert damping values as low as 3 × 10-4 and FMR linewidth of 0.3 mT at 8 GHz are achieved even for films that do not exceed 30 nm in thickness. Moreover, we measure inverse spin hall effect (ISHE) on Pt/BiYIG stacks showing that the magnetic insulator's surface is transparent to spin current, making it appealing for spintronic applications.

Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride.

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of h-BN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.

Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes.

We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni­Al2O3­Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.

High domain wall velocities via spin transfer torque using vertical current injection.

Domain walls, nanoscale transition regions separating oppositely oriented ferromagnetic domains, have significant promise for use in spintronic devices for data storage and memristive applications. The state of these devices is related to the wall position and thus rapid operation will require a controllable onset of domain wall motion and high speed wall displacement. These processes are traditionally driven by spin transfer torque due to lateral injection of spin polarized current through a ferromagnetic nanostrip. However, this geometry is often hampered by low maximum wall velocities and/or a need for prohibitively high current densities. Here, using time-resolved magnetotransport measurements, we show that vertical injection of spin currents through a magnetic tunnel junction can drive domain walls over hundreds of nanometers at ~500 m/s using current densities on the order of 6 MA/cm(2). Moreover, these measurements provide information about the stochastic and deterministic aspects of current driven domain wall mediated switching.

Graphene-passivated nickel as an oxidation-resistant electrode for spintronics.

We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapor deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrate that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.